Abstract: The invention relates to a method of manufacturing a semiconductor device (10) with a field effect transistor, in which method a semiconductor body (1) of a semiconductor material is provided, at a surface thereof, with a source region (2) and a drain region (3) and with a gate region (4) between the source region (2) and the drain region (3), which gate region comprises a semiconductor region (4A) of a further semiconductor material that is separated from the surface of the semiconductor body (1) by a gate dielectric (5), and with spacers (6) adjacent to the gate region (4), for forming the source and drain regions (2,3), in which method the source region (2) and the drain region (3) are provided with a metal layer (7) which is used to form a compound (8) of the metal and the semiconductor material, and the gate region (4) is provided with a metal layer (7) which is used to form a compound (8) of the metal and the further semiconductor material.