Abstract: Disclosed is a process capable of precision slicing substrates with a dimension in the linear direction of at least I meter, comprising the following steps: (I) affixing the work piece to a stage; (11) providing multiple essentially parallel, essentially straight wires having a diameter in the range from about 100 ?m to about 600 ?m, and allowing the multiple wires to contact the surface of the work piece; (III) allowing the multiple wires to travel in linear directions, optionally with cutting slurry dispensed thereon; and (IV) allowing the multiple wires to move in the slicing directions relative to the work piece; wherein in step (IV), the multiple wires maintain essentially straight and essentially parallel to each other. The process can be used for slicing silica glass substrates having a diameter large than 2 meters in producing slices thereof with a high surface flatness and a low thickness variation.

Abstract: A method of polishing a semiconductor layer formed on a transparent substrate is described, the method including measuring the thickness of the semiconductor from the substrate side of the semiconductor layer simultaneously with the polishing, and using the thickness measurement to modify the polishing.

Abstract: An apparatus for finishing a glass sheet comprising a pair of fluid bearings having bearing surfaces in opposing relation, the bearing surfaces spaced apart to define a channel for receiving the glass sheet, each bearing surface having a plurality of pores through which jets are introduced into the channel, the pores positioned on the bearing surface such that the jets produce a uniform fluid pressure across the bearing surface.