Abstract: Improvements in the production of high-performance latching magneto-optic garnet materials are provided. It has been recognized that high-Europium magneto-optic garnets will offer superior properties in devices such as isolators, circulators and interleavers. However, formation of, e.g., (BiEu)3(FeGa)5O12 on conventional, congruent composition, garnet substrates is difficult, due to poor lattice matching between the magneto-optic garnet and such conventional substrates. The invention addresses this problem, by utilizing a single crystal substrate composed essentially of a solid solution of two or more garnet materials. By use of a solid solution of two or more garnets, e.g., two congruent garnet compositions, an acceptable lattice parameter is able to be attained. Useful solid solutions include gadolinium scandium gallium garnet and gadolinium scandium aluminum garnet, or gadolinium scandium gallium garnet and terbium scandium gallium garnet.

Abstract: In accordance with the invention, an improved optical communication system employs light-generating devices comprising a phonon-tuned crystal alloy host doped with an optically active atom. In one embodiment, the crystal alloy host and optically active atom respectively comprise spinel and nickel. The spinel material is typically a solid solution between magnesium aluminate and magnesium gallate.

Abstract: In an arrangement substantially like an optical isolator, appropriate choice of the composition of the magneto-optic element can result in a variable optical attenuator. The composition is selected to vary in the direction of light propagation, and also is selected such that the magneto-optic element comprises a compensation wall. The compensation wall is movable in response to a change in the temperature of the magneto-optic element, whereby the attenuation of the device is changed.

Abstract: Garnet material according to a particular embodiment of the invention exhibits a substantially rectangular magnetization loop, with .vertline.H.sub.S .vertline.>.vertline.4.pi.M.sub.S .vertline.Oe and .vertline.4.pi.M.sub.s .vertline.<100 G over a predetermined operating range (e.g., -40.degree. to +80.degree. C.), where H.sub.S is the switching magnetic field of the loop, and 4.pi.M.sub.S is the saturation magnetization. The material exhibits improved latching behavior. In a further embodiment of the invention the composition of the garnet material is selected such that the material exhibits hard latching behavior (.vertline.H.sub.s .vertline.>500 Oe) at least at room temperature. Garnet materials according to the invention can advantageously be used in magneto-optic isolators and other magneto-optic devices. For instance, the material enables manufacture of isolators that do not contain a bias magnet.