Abstract: Disclosed is a process for forming, over a semiconductor substrate, a multilayer structure having successively a first layer of silicon-containing material, a relatively thin oxide layer, and a second layer of silicon-containing material. The oxide layer has a substantially uniform thickness in a range from about 1 Angstrom to about 20 Angstroms. The oxide layer consists essentially of silicon dioxide that is formed by exposing the first layer to an aqueous oxidizing bath at a relatively low temperature such that diffusion of dopants in the semiconductor substrate is not induced. The oxide layer prevents dopants from outgassing and diffusing out of the first layer and into the second layer. Also disclosed is a structure formed by the disclosed process.

Abstract: Disclosed is a process for forming, over a semiconductor substrate, a multilayer structure having successively a first layer of silicon-containing material, a relatively thin oxide layer, and a second layer of silicon-containing material. The oxide layer has a substantially uniform thickness in a range from about 1 Angstrom to about 20 Angstroms. The oxide layer consists essentially of silicon dioxide that is formed by exposing the first layer to an aqueous oxidizing bath at a relatively low temperature such that diffusion of dopants in the semiconductor substrate is not induced. The oxide layer prevents dopants from outgassing and diffusing out of the first layer and into the second layer. Also disclosed is a structure formed by the disclosed process.