Abstract: The wafer processing boat of a plasma enhanced chemical vapor processor includes an R.F. connector at the inner end of its interleaved electrodes. The R.F. electrical connector includes slidably mated male and female portions for making R.F. electrical connection to the boat through the end wall of the evacuable furnace tube. A particle shield surrounds the mated male and female R.F. connector portions for confinement of particulates released during the mating of the connector. The shield includes an open end which faces downstream of the flow of processing gases to reduce backstreaming of particulates onto the wafers. The electrical male conductors of the connector are covered by a quartz sheath.

Abstract: In a plasma enhanced chemical vapor processing apparatus first and second sets of electrodes are electrically insulated one from the other via the intermediary of a plurality of insulator bodies. Each of the insulator bodies includes a recessed portion for extending the electrical path length over the surface of the insulator to minimize shorting of the insulators in use. The recess in the insulator body is of generally L-shaped cross section including a radially inwardly directed recessed portion intersecting with an axially directed recess portion. The axially directed portion of the recess is shielded from the plasma discharge, thereby reducing the probability of deposition of conductive material thereon which could otherwise result in shorting of the insulator member. The axial recesses extend into the insulator body from opposite ends thereof.

Abstract: Semiconductive wafers are processed, i.e., etched or layers deposited thereon, by means of a plasma enhanced chemical vapor processing system wherein the plasma is generated by a train of R.F. power pulses. The pulse repetition rate, pulse length and peak power level of the individual pulses are independently variably controlled to variably control the uniformity of the processing of the semiconductive wafers within the processing gaps.