Abstract: A method to improve CdTe-based photovoltaic device efficiency is disclosed. The CdTe-based photovoltaic device can include oxygen or silicon in semiconductor layers.

Abstract: A method to improve CdTe-based photovoltaic device efficiency is disclosed. The CdTe-based photovoltaic device can include oxygen or silicon in semiconductor layers.

Abstract: A system and method are provided for manufacturing workpieces, such as metal articles like sputtering target, the system comprising: comparing one or more physical or chemical values of a respective one of a plurality of metal target blanks to one or more comparable values of at least one desired criterion; selecting one of the metal target blanks from a plurality of metal target blanks as a work-in-progress; assigning a serial route for the work-in-progress; processing the work-in-progress by translating the work-in-progress from note to node with an automated transport, after completion of the events at each node; rejecting or accepting the work-in-progress as a metal target by evaluating a result of at least one event of the one or more respective events to be completed at, at least one of the plurality of nodes.

Abstract: A fixture and method is provided for gripping an article, such as a sputtering target. The fixture comprises a base, a first set of contact rollers, and a second set of contact rollers, wherein at least one of the first set and the second set are adjustably positioned relative to the other of the first set and the second set on the base. The contact rollers can be configured as v-grooved wheels that will only touch chamfered portions of an outer diameter of the sputtering target when the contact rollers are clamped against the sputtering target. At least one of the first set and the second set of contact rollers can be pivotally mounted on a slide, with the slide being adjustably positioned on the base of the fixture.

Abstract: A system and method are provided for manufacturing a sputtering target. The system is preferably automated. Sub systems of the manufacturing system include a robotic part handling sub system, a weighing sub system adapted to measure the weight of a part to be manufactured into a sputtering target, and a machining sub system adapted to finish machine a part to be manufactured into a sputtering target. The system can further include a cleaning sub system adapted to clean a part to be manufactured into a sputtering target, an inspection sub system adapted to measure dimensions of a part to be manufactured into a sputtering target, and a feedback control sub system adapted to provide control signals to one or more of the robotic handling sub system, the weighing sub system, the cleaning sub system, and the inspection sub system to control processing performed by one or more of the sub systems.

Abstract: A system and method are provided for manufacturing workpieces, such as metal articles like sputtering target, the system comprising: comparing one or more physical or chemical values of a respective one of a plurality of metal target blanks to one or more comparable values of at least one desired criterion; selecting one of the metal target blanks from a plurality of metal target blanks as a work-in-progress; assigning a serial route for the work-in-progress; processing the work-in-progress by translating the work-in-progress from note to node with an automated transport, after completion of the events at each node; rejecting or accepting the work-in-progress as a metal target by evaluating a result of at least one event of the one or more respective events to be completed at, at least one of the plurality of nodes.

Abstract: A fixture and method is provided for gripping an article, such as a sputtering target. The fixture comprises a base, a first set of contact rollers, and a second set of contact rollers, wherein at least one of the first set and the second set are adjustably positioned relative to the other of the first set and the second set on the base. The contact rollers can be configured as v-grooved wheels that will only touch chamfered portions of an outer diameter of the sputtering target when the contact rollers are clamped against the sputtering target. At least one of the first set and the second set of contact rollers can be pivotally mounted on a slide, with the slide being adjustably positioned on the base of the fixture.

Abstract: A method of forming a sputtering target assembly is described that involves explosively bonding a target grade plate and a backing plate member to form a bonded preform having dimensions such that a large target or several target assemblies can be obtained. The method includes optionally partitioning the bonded preform into a plurality of sputtering target assemblies. An interlayer can optionally be disposed between the target grade plate and the backing plate member before bonding. A bond quality test sample can be produced by the method. The sputtering target assemblies, the bonded preform, and the bond quality test sample are further described.

Abstract: A method of assembling the components of a sputter cathode assembly via thermal expansion of projections provided on one assembly member to provide thermal contact to the other assembly member, and the sputter cathode formed thereby are described. The method forms a temporary mechanical attachment of component members that ends when the components are cooled below the predetermined contact temperature. The method optionally includes mechanically interlocking the assembly components together.

Abstract: A method of forming a sputtering target is described that involves bonding a backing plate onto a casement having one or more recesses that contain target material to form a bonded target. During the bonding process, the bonded target is optionally vacuum sealed within the recess. The bonded target is then optionally annealed while under vacuum to form an annealed sputtering target. The sputtering target can then be retrieved by removing at least a portion of the casement from the sputtering target in one or several steps. Also described is a casement having one or more recesses containing bonded target material that is optionally vacuum sealed in the casement. The casement, as well as the backing plate that is optionally bonded onto the casement, are further described as well as other options and methods.

Abstract: A method of forming a sputtering target assembly and the sputtering target assembly made therefrom are described. The method includes bonding a sputtering target to a backing plate at a low temperature. Also described is a method of forming a sputtering target assembly such that a gap is formed between the sputtering target and the backing plate. Also described is a method of forming a sputtering target assembly providing a mechanism to prevent unintended sputtering into the backing plate.

Abstract: Methods for reducing inclusion content of sputter targets and targets so produced are disclosed. Inclusions (93) may be reduced by adding a small amount of Si to the molten Al or molten Al alloy followed by filtering of the molten metals through a filter medium (175). Targets having substantially no inclusions (93) therein of greater than about 400 &mgr;m are especially useful in the sputtering of large flat panel displays and result, upon sputtering, in a reduction in the amount of macrmparticles sputtered onto the substrate.

Abstract: The present invention provides a sputter target for the deposition of titanium nitride films. The sputter target has a target face comprising titanium nitride having a density of at least 90% of the theoretical density of 100% pure titanium nitride. The sputter target is prepared by subjecting titanium nitride powder to hot isostatic pressure.

Abstract: The present invention provides a film comprising alternate layers of a metal such as zirconium and silicon. The film has a critical temperature at which the film can undergo explosive crystallization. The film undergoes explosive crystallization upon subjecting the film to an energy impulse at temperature equal to or greater than the critical temperature.

Abstract: A process for producing coatings comprising cubic boron nitride on a substrate is disclosed. The process involves magnetron sputter deposition of a heated BN source in an evacuated atmosphere having a limited partial pressure of nitrogen and a noble gas. During cathodic sputtering of the BN source, a metal dopant selected from Groups IA, IVA, VA, VIIA, IB, IIB, IIIB, IVB and VB of the periodic table, the metal dopant preferably being Al or Cu, is deposited at a concentration less than 1.5 atomic percent.

Abstract: An optimized annular sputter target assembly for use in sputtering magnetic material, comprising a thin target piece of magnetic material mounted on a backing structure of nonmagnetic material. Said backing structure provides means for easy mounting and removal of the target assembly and for providing good thermal and electrical contact with the cooling wall of the sputter source. The target piece has a portion extending radially outwardly from said cooling wall thereby providing greater target surface area.

Abstract: A method of depositing a high-emissivity layer on a substrate comprising RF sputter deposition of a carbide-containing target in an atmosphere of a hydrocarbon gas and a noble gas. As the carbide is deposited on the substrate the hydrocarbon gas decomposes to hydrogen and carbon. The carbon deposits on the target and substrate causing a carbide/carbon composition gradient to form on the substrate. At a sufficiently high partial pressure of hydrocarbon gas, a film of high-emissivity pure carbon will eventually form over the substrate.

Abstract: An improved method is disclosed of bonding an electrically conductive matal to an electrically conductive layer which is adhered to and which overlies a curved non-metallic substrate. This method comprises providing a non-metallic substrate with a curved surface. This substrate has adhered to its surface an electrically conductive layer. An electrically conductive material which is to be bonded to the electrically conductive layer is placed on the electrically conductive layer. A rigid, substantially inert and transparent to laser beam energy, cover means is placed on the electrically conductive material sufficiently to hold the electrically conductive material against the electrically conductive layer. A high energy density pulsed laser beam is directed on the materials at a sufficiently high energy density thereby welding the materials together.