Abstract: A patterning method allows for separate transfer of a complementary reticle set. In one embodiment, for example, the method includes etching a phase shift mask (PSM), then etching a cut mask for a cPSM mask. Moreover, a decoupled complementary mask patterning transfer method includes two separate and decoupled mask patterning steps which form combined patterns through the use of partial image transfers into an intermediate hard mask prior to final wafer patterning. The intermediate and final hard mask materials are chosen to prevent image transfer into an underlying substrate or wafer prior to the final etch process.

Abstract: A method (100) to manufacture semiconductor reticles associated with a design uses an optical pattern correction (OPC) test pattern (104) in a first reticle frame and having subresolution features that will not resolve or appear on a resulting wafer. A first reticle is made (106) and critical parameters are extracted from the first reticle (108). The critical parameters are used to execute an OPC model (112) to generate a modified design. A production reticle is made from the modified design. The OPC test pattern is placed in a second reticle frame and a second reticle is manufactured. Critical parameters from the second reticle are compared with the critical parameters from the first reticle and must be within a predetermined tolerance or the reticle build process is modified until the tolerance is reached.