Abstract: Cobalt-nickel oxide films of nominal 100 nm thickness, and resistivity as low as 0.06 ?·cm have been deposited by spin-casting from both aqueous and organic precursor solutions followed by annealing at 450° C. in air. An increase in film resistivity was found upon substitution of other cations (e.g., Zn2+, Al3+) for Ni in the spinel structure. However, some improvement in the mechanical properties of the films resulted. On the other hand, addition of small amounts of Li decreased the resistivity. A combination of XRD, XPS, UV/Vis and Raman spectroscopy indicated that NiCo2O4 is the primary conducting component and that the conductivity reaches a maximum at this stoichiometry. When x<0.67, NiO forms leading to an increase in resistivity; when x>0.67, the oxide was all spinel but the increased Co content lowered the conductivity.

Abstract: Cobalt-nickel oxide films of nominal 100 nm thickness, and resistivity as low as 0.06 &OHgr;·cm have been deposited by spin-casting from both aqueous and organic precursor solutions followed by annealing at 450° C. in air. Films deposited on sapphire substrates exhibit a refractive index of about 1.7 and are relatively transparent in the wavelength region from 0.6 to 10.0 &mgr;m. They are also magnetic. The electrical and spectroscopic properties of the oxides have been studied as a function of x=Co/(Co+Ni) ratio. An increase in film resistivity was found upon substitution of other cations (e.g., Zn2+, Al3+) for Ni in the spinel structure. However, some improvement in the mechanical properties of the films resulted. On the other hand, addition of small amounts of Li decreased the resistivity. A combination of XRD, XPS, UV/vis and Raman spectroscopy indicated that NiCo2O4 is the primary conducting component and that the conductivity reaches a maximum at this stoichiometry.

Abstract: Cobalt-nickel oxide films of nominal 100 nm thickness, and resistivity as low as 0.06 &OHgr;·cm have been deposited by spin-casting from both aqueous and organic precursor solutions followed by annealing at 450° C. in air. Films deposited on sapphire substrates exhibit a refractive index of about 1.7 and are relatively transparent in the wavelength region from 0.6 to 10.0 &mgr;m. They are also magnetic. The electrical and spectroscopic properties of the oxides have been studied as a function of x=Co/(Co+Ni) ratio. An increase in film resistivity was found upon substitution of other cations (e.g., Zn2+, Al3+) for Ni in the spinel structure. However, some improvement in the mechanical properties of the films resulted. On the other hand, addition of small amounts of Li decreased the resistivity. A combination of XRD, XPS, UV/Vis and Raman spectroscopy indicated that NiCo2O4 is the primary conducting component and that the conductivity reaches a maximum at this stoichiometry.

Abstract: Cobalt-nickel oxide films of nominal 100 nm thickness, and resistivity as low as 0.06 &OHgr;•cm have been deposited by spin-casting from both aqueous and organic precursor solutions followed by annealing at 450° C. in air. Films deposited on sapphire substrates exhibit a refractive index of about 1.7 and are relatively transparent in the wavelength region from 0.6 to 10.0 &mgr;m. They are also magnetic. The electrical and spectroscopic properties of the oxides have been studied as a function of x=Co/(Co+Ni) ratio. An increase in film resistivity was found upon substitution of other cations (e.g., Zn2+, Al3+) for Ni in the spinel structure. However, some improvement in the mechanical properties of the films resulted. On the other hand, addition of small amounts of Li decreased the resistivity. A combination of XRD, XPS, UV/Vis and Raman spectroscopy indicated that NiCo2O4 is the primary conducting component and that the conductivity reaches a maximum at this stoichiometry.

Abstract: The present invention is a method for reducing a dopant in a film of a metal oxide wherein the dopant is reduced and the first metal oxide is substantially not reduced. The method of the present invention relies upon exposing the film to reducing conditions for a predetermined time and reducing a valence of the metal from a positive valence to a zero valence and maintaining atoms with a zero valence in an atomic configuration within the lattice structure of the metal oxide. According to the present invention, exposure to reducing conditions may be achieved electrochemically or achieved in an elevated temperature gas phase.