Abstract: Among other things, the present disclosure provides designed oligonucleotides, compositions, and methods thereof. In some embodiments, provided oligonucleotide compositions provide improved single-stranded RNA interference and/or RNase H-mediated knockdown. Among other things, the present disclosure encompasses the recognition that structural elements of oligonucleotides, such as base sequence, chemical modifications (e.g., modifications of sugar, base, and/or internucleotidic linkages) or patterns thereof, conjugation with additional chemical moieties, and/or stereochemistry [e.g., stereochemistry of backbone chiral centers (chiral internucleotidic linkages)], and/or patterns thereof, can have significant impact on oligonucleotide properties and activities, e.g., RNA interference (RNAi) activity, stability, delivery, etc.

Abstract: Among other things, the present disclosure relates to designed oligonucleotides, compositions, and methods thereof. In some embodiments, provided oligonucleotide compositions provide altered splicing of a transcript. In some embodiments, provided oligonucleotide compositions have low toxicity. In some embodiments, provided oligonucleotide compositions provide improved protein binding profiles. In some embodiments, provided oligonucleotide compositions have improved delivery. In some embodiments, provided oligonucleotide compositions have improved uptake. In some embodiments, the present disclosure provides methods for treatment of diseases using provided oligonucleotide compositions.

Abstract: Among other things, the present disclosure provides designed APOC3 oligonucleotides, compositions, and methods thereof. In some embodiments, provided oligonucleotide compositions provide improved single-stranded RNA interference and/or RNase H-mediated knockdown. Among other things, the present disclosure encompasses the recognition that structural elements of oligonucleotides, such as base sequence, chemical modifications (e.g., modifications of sugar, base, and/or internucleotidic linkages) or patterns thereof, conjugation with additional chemical moieties, and/or stereochemistry [e.g., stereochemistry of backbone chiral centers (chiral internucleotidic linkages)], and/or patterns thereof, can have significant impact on oligonucleotide properties and activities, e.g., RNA interference (RNAi) activity, stability, delivery, etc.

Abstract: Dermatological cosmetic combination treatments with high intensity focused ultrasound, dermal fillers, fat-reducing compounds, cavitation-prone fluids, and/or septa dissection are provided. A HIFU therapy system can include an imaging system, methods adapted to alter placement and position of a line focus band therapy, multiple simultaneous cosmetic ultrasound treatment zones in tissue, and dithering ultrasound beams from a transducer to alter placement and position of multiple cosmetic treatment zones in tissue. The HIFU systems can include a hand wand, removable transducer modules, and a control module. The dermal fillers can include hydroxyapatite. The fat-reducing compounds can include adipocytolytic compounds, pentacyclic triterpenoid compounds, proapoptotic compounds, compounds impairing differentiation of pre-adipocytes, and combinations thereof. The cavitation-prone fluids can include molecules dissolved in fluids, ethanol, glycerin, and ethylene glycol.

Abstract: An integrated circuit containing an n-channel finFET and a p-channel finFET is formed by forming a first polarity fin epitaxial layer for a first polarity finFET, and subsequently forming a hard mask which exposes an area for a second, opposite, polarity fin epitaxial layer for a second polarity finFET. The second polarity fin epitaxial layer is formed in the area exposed by the hard mask. A fin mask defines the first polarity fin and second polarity fin areas, and a subsequent fin etch forms the respective fins. A layer of isolation dielectric material is formed over the substrate and fins. The layer of isolation dielectric material is planarized down to the fins. The layer of isolation dielectric material is recessed so that the fins extend at least 10 nanometers above the layer of isolation dielectric material. Gate dielectric layers and gates are formed over the fins.

Abstract: An integrated circuit containing an n-channel finFET and a p-channel finFET is formed by forming a first polarity fin epitaxial layer for a first polarity finFET, and subsequently forming a hard mask which exposes an area for a second, opposite, polarity fin epitaxial layer for a second polarity finFET. The second polarity fin epitaxial layer is formed in the area exposed by the hard mask. A fin mask defines the first polarity fin and second polarity fin areas, and a subsequent fin etch forms the respective fins. A layer of isolation dielectric material is formed over the substrate and fins. The layer of isolation dielectric material is planarized down to the fins. The layer of isolation dielectric material is recessed so that the fins extend at least 10 nanometers above the layer of isolation dielectric material. Gate dielectric layers and gates are formed over the fins.

Abstract: An integrated circuit containing an n-channel finFET and a p-channel finFET is formed by forming a first polarity fin epitaxial layer for a first polarity finFET, and subsequently forming a hard mask which exposes an area for a second, opposite, polarity fin epitaxial layer for a second polarity finFET. The second polarity fin epitaxial layer is formed in the area exposed by the hard mask. A fin mask defines the first polarity fin and second polarity fin areas, and a subsequent fin etch forms the respective fins. A layer of isolation dielectric material is formed over the substrate and fins. The layer of isolation dielectric material is planarized down to the fins. The layer of isolation dielectric material is recessed so that the fins extend at least 10 nanometers above the layer of isolation dielectric material. Gate dielectric layers and gates are formed over the fins.

Abstract: An integrated circuit containing an n-channel finFET and a p-channel finFET is formed by forming a first polarity fin epitaxial layer for a first polarity finFET, and subsequently forming a hard mask which exposes an area for a second, opposite, polarity fin epitaxial layer for a second polarity finFET. The second polarity fin epitaxial layer is formed in the area exposed by the hard mask. A fin mask defines the first polarity fin and second polarity fin areas, and a subsequent fin etch forms the respective fins. A layer of isolation dielectric material is formed over the substrate and fins. The layer of isolation dielectric material is planarized down to the fins. The layer of isolation dielectric material is recessed so that the fins extend at least 10 nanometers above the layer of isolation dielectric material. Gate dielectric layers and gates are formed over the fins.

Abstract: Rear boat extensions for boats and boats having such are provided. The rear boat extensions described herein are generally suitable for boats comprising a transom and a plate that is pivotally mounted via a hinge near a bottom edge of the transom, such that the plate is pivotable about an axis of the hinge upwardly toward and downwardly away from the transom. In some embodiments, the rear boat extensions described herein may include a bottom surface including a recess and one or more sloped or curved sections disposed on either side of the recess. The recess is disposed at a front end of the rear boat extension and configured to accommodate pivoting of the plate beneath the bottom surface of the rear boat extension. The sloped or curved sections disposed on either side of the recess serve to push water toward respective outboard sides of the boat to manipulate the size and/or shape of the wake produced by the boat.

Abstract: A controller timing system according to an exemplary aspect of the present disclosure includes, among other things, a master controller to generate a timing signal, a first slave controller configured to wake in response to the timing signal, and a second slave controller configured to wake in response to the timing signal. Timing of the first slave controller and timing of the second slave controller is coordinated based on the timing signal.

Abstract: An automotive vehicle includes an air conditioning system configured to selectively cool a cabin of the vehicle and at least one electrical component of the vehicle. The vehicle also includes one or more controllers configured to determine whether the air conditioning system is operating to cool the at least one electrical component, to determine whether cabin cooling is requested, and to enable the air conditioning system to cool the cabin if the air conditioning system is operating to cool the at least one electrical component and if cabin cooling is requested.

Abstract: A vehicle may include an electric machine, a traction battery, and a solar panel array. The vehicle may further include circuitry electrically connected with the battery and array. The circuitry may include at least one switch configured to close when activated by a calibrated maximum holding power to permit energy to flow from the array to the battery.

Abstract: Various configurations of improved wake-modifying devices for a power boat are provided herein. All such configurations provide a water channel and (optional) wedge for capturing and redirecting significantly more of the water flowing past the transom of the boat than conventional trim tabs consisting primarily of a flat plate. This increases the upward force applied to the deployed wake-modifying device and raises the stern of the boat on the non-surf side to list the boat to the surf side, producing a larger wake on the surf side. Some configurations provide a convergent water channel to produce longer, smoother wakes on the surf side of the boat. Other configurations provide a divergent water channel, which produces a comparatively shorter, taller wake on the surf side of the boat.

Abstract: An integrated circuit containing an n-channel finFET and a p-channel finFET is formed by forming a first polarity fin epitaxial layer for a first polarity finFET, and subsequently forming a hard mask which exposes an area for a second, opposite, polarity fin epitaxial layer for a second polarity finFET. The second polarity fin epitaxial layer is formed in the area exposed by the hard mask. A fin mask defines the first polarity fin and second polarity fin areas, and a subsequent fin etch forms the respective fins. A layer of isolation dielectric material is formed over the substrate and fins. The layer of isolation dielectric material is planarized down to the fins. The layer of isolation dielectric material is recessed so that the fins extend at least 10 nanometers above the layer of isolation dielectric material. Gate dielectric layers and gates are formed over the fins.

Abstract: A method according to an exemplary aspect of the present disclosure includes, among other things, inhibiting operation of an internal combustion engine of a vehicle based on a proximity of the vehicle to a fueling location.

Abstract: A system and method for improving engine starting and stopping is described. In one example, turbine vanes are adjusted to increase engine exhaust backpressure to reduce engine stopping time and to limit engine speed overshoot during engine starting. The system and method may reduce engine emissions and improve a vehicle driving experience.

Abstract: Wakesurf and wakeboard boats are provided which include a component positioned along and/or within the hull and an actuator coupled to the component for moving an end of the component outward from the hull and retracting the end of the component to be in proximity with the hull. In some embodiments, the component is spaced forward of a vertical plane comprising the forwardmost point of the transom. Methods for creating a wake behind a boat are also provided which include listing a boat to one side via a listing component disposed on such a side and moving a component disposed within or coupled to an exterior surface of the hull on the opposing side of the boat. The component is moved outwardly from the exterior surface of the hull such that a distal free end of the component is spaced from the exterior surface when the boat is listed.

Abstract: Methods and systems for producing high purity 3-hydroxypropionic acid (3-HP) from an aqueous medium, such as a fermentation broth, are described. Aqueous 3-HP solution can be purified by flash evaporation wherein the 3-HP is vaporized at an elevated temperature without conversion to acrylic acid. This process can be integrated with downstream processes for producing other chemical and consumer products.

Abstract: An integrated circuit containing an n-channel finFET and a p-channel finFET is formed by forming a first polarity fin epitaxial layer for a first polarity finFET, and subsequently forming a hard mask which exposes an area for a second, opposite, polarity fin epitaxial layer for a second polarity finFET. The second polarity fin epitaxial layer is formed in the area exposed by the hard mask. A fin mask defines the first polarity fin and second polarity fin areas, and a subsequent fin etch forms the respective fins. A layer of isolation dielectric material is formed over the substrate and fins. The layer of isolation dielectric material is planarized down to the fins. The layer of isolation dielectric material is recessed so that the fins extend at least 10 nanometers above the layer of isolation dielectric material. Gate dielectric layers and gates are formed over the fins.

Abstract: A vehicle may include an electric machine, a traction battery, and a solar panel array. The vehicle may further include circuitry electrically connected with the battery and array. The circuitry may include at least one switch configured to close when activated by a calibrated maximum holding power to permit energy to flow from the array to the battery.