Abstract: A durable coating made up of superimposed microlayers of preselected materials, and a method of making and utilizing such a coating. In one embodiment of the invention, at least 200 microlayers of at least one transparent material, having a thickness of less than 50 nms are superimposed in a sequential manner so as to obtain a desired arrangement between the layers. This structure then forms a transparent coating that has strength characteristics that are substantially greater than the strength of a layer of the coating material alone.

Abstract: Disclosed herein are aluminide coatings. In one embodiment coatings are used as a barrier coating to protect a metal substrate, such as a steel or a superalloy, from various chemical environments, including oxidizing, reducing and/or sulfidizing conditions. In addition, the disclosed coatings can be used, for example, to prevent the substantial diffusion of various elements, such as chromium, at elevated service temperatures. Related methods for preparing protective coatings on metal substrates are also described.

Abstract: Disclosed herein are aluminide coatings. In one embodiment coatings are used as a barrier coating to protect a metal substrate, such as a steel or a superalloy, from various chemical environments, including oxidizing, reducing and/or sulfidizing conditions. In addition, the disclosed coatings can be used, for example, to prevent the substantial diffusion of various elements, such as chromium, at elevated service temperatures. Related methods for preparing protective coatings on metal substrates are also described.

Abstract: According to the present invention, a joined product is at least two ceramic parts, specifically bi-element carbide parts with a bond joint therebetween, wherein the bond joint has a metal silicon phase. The bi-element carbide refers to compounds of MC, M2C, M4C and combinations thereof, where M is a first element and C is carbon. The metal silicon phase may be a metal silicon carbide ternary phase, or a metal silicide.

Abstract: According to the method of the present invention, joining a first bi-element carbide to a second bi-element carbide, has the steps of: (a) forming a bond agent containing a metal carbide and silicon; (b) placing the bond agent between the first and second bi-element carbides to form a pre-assembly; and (c) pressing and heating the pre-assembly in a non-oxidizing atmosphere to a temperature effective to induce a displacement reaction creating a metal silicon phase bonding the first and second bi-element carbides.

Abstract: This invention is directed to a process for forming noninterwoven dispersed particulate composite products. In one case a composite multi-layer film product comprises a substantially noninterwoven multi-layer film having a plurality of discrete layers. This noninterwoven film comprises at least one discrete layer of a first material and at least one discrete layer of a second material. In another case the first and second materials are blended together with each other. In either case, the first material comprises a metalloid and the second material a metal compound. At least one component of a first material in one discrete layer undergoes a solid state displacement reaction with at least one component of a second material thereby producing the requisite noninterwoven composite film product. Preferably, the first material comprises silicon, the second material comprises Mo.sub.2 C, the third material comprises SiC and the fourth material comprises MoSi.sub.2.

Abstract: Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the Si-Al-N film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates.In general, the subject films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500.degree. C. or less.

Abstract: Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates.In general, the subject Si-Al-O-N films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500# C. or less.

Abstract: The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion.