Patents by Inventor Charles H. Joyner, Jr.

Charles H. Joyner, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors
    Patent number: 4830982
    Abstract: Semi-insulating epitaxial layers of Group III-V based semiconductor compounds are produced by a MOCVD process through the use of organic titanium-based compounds. Resistivities greater than 1.times.10.sup.7 ohm/cm have been achieved.
    Type: Grant
    Filed: June 4, 1987
    Date of Patent: May 16, 1989
    Assignees: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Andrew G. Dentai, Charles H. Joyner, Jr., Timothy W. Weidman, John L. Zilko
  • Semi-insulating group III-V based compositions doped using bis arene titanium sources
    Patent number: 4782034
    Abstract: Semi-insulating epitaxial layers of Group III-V based semiconductor compounds are produced by an MOCVD process through the use of bis arene titanium sources, such as cyclopentadienyl cycloheptatrienyl titanium and bis (benzene) titanium.
    Type: Grant
    Filed: June 4, 1987
    Date of Patent: November 1, 1988
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Andrew G. Dentai, Charles H. Joyner, Jr., Timothy W. Weidman, John L. Zilko
  • Semiconductor devices employing Ti-doped Group III-V epitaxial layer
    Patent number: 4774554
    Abstract: High resistivity Ti-doped Group III-V-based MOCVD layers are used to constrain current to flow through the active region of a variety of devices such as CSBH and DCPBH lasers.
    Type: Grant
    Filed: December 16, 1986
    Date of Patent: September 27, 1988
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Andrew G. Dentai, Charles H. Joyner, Jr.
  • Semiconductor heterointerface optical waveguide
    Patent number: 4751555
    Abstract: Low loss semiconductor waveguides for supporting propagation of optical signals over a wide range of wavelengths are achieved by growing at least two epitaxial layers of dopant material contiguous along a major surface of each layer to form a heterointerface therebetween. At least one of the epitaxial layers includes a sufficient concentration of semiconductor material to cause strain via lattice mismatch substantially at and near the heterointerface. The strain induces a change in refractive index such that the heterointerface exhibits a substantially higher refractive index than a portion of each epitaxial layer proximate to the heterointerface. The resulting waveguide is capable of supporting propagation of optical signals substantially along the heterointerface. In one example, contiguous epitaxial layers of InP and InGaP form a waveguide for optical signals at wavelengths greater than 0.93 .mu.m. The concentration of Ga in the InGaP epitaxial layer is varied from 10.sup.18 to 10.sup.20 cm.sup.
    Type: Grant
    Filed: May 11, 1987
    Date of Patent: June 14, 1988
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Rodney C. Alferness, Andrew G. Dentai, Charles H. Joyner, Jr.