Abstract: A junction field effect transistor, specifically a static induction transistor. The N-type source regions are formed as two zones. First, relatively lightly doped first zones are formed by ion-implanting doping material relatively deeply into the semiconductor material. Then relatively heavily doped second zones are formed by ion-implanting doping material to a relatively shallow depth within the first zones to leave portions of the first zones interposed between the second zones and the remainder of the semiconductor material. The resulting devices exhibit reduced gate-drain junction capacitance at low drain bias voltages thereby improving device capacitance linearity.

Abstract: A junction field effect transistor, specifically a static induction transistor. The N-type source regions are formed as two zones. First, relatively lightly doped first zones are formed by ion-implanting doping material relatively deeply into the semiconductor material. Then relatively heavily doped second zones are formed by ion-implanting doping material to a relatively shallow depth within the first zones to leave portions of the first zones interposed between the second zones and the remainder of the semiconductor material. The resulting devices exhibit reduced gate-drain junction capacitance at low drain bias voltages thereby improving device capacitance linearity.