Abstract: The invention is an apparatus including a semiconductor laser device emitting light at least at a certain wavelength, and at least two reflectors external to the laser device and positioned to reflect the light to stabilize the wavelength.

Abstract: The present invention teaches a novel technique for reducing the temperature-related spectrum shifts in optical devices, particularly waveguide grating routers (WGR). In general, the present invention modifies a portion of the length of at least one waveguide within an optical device in a manner that stabilizes the wavelength spectrum passing therethough even when exposed to temperature variations. More specifically, by knowing how the refractive index of a certain material changes with temperature variations as compared to that of common waveguide materials, such a silica, one may employ the teachings of the present invention to precisely modify the nature of the optical path through which a signal travels to fully compensate for any temperature-related wavelength spectrum shift. In other words, be able to produce an optical device with a plurality of waveguides each of which is appropriately modified so that any optical signal passing therethrough has the same wavelength at any two given temperatures.

Abstract: In accordance with the invention, an optical multiplexer includes at least one reconfigurable add-drop unit that can add-drop one channel out of a large set by switching the light path through one of a set of fixed add-drop filters. Reconfiguration is done by switching from the add-drop filter path to a bypass path, changing to a different add-drop filter and then switching back. The phase delay of the bypass path is adjusted to maintain nearly maximum transmission during switching. The selection among add-drop filters is done by sliding an integrated optic chip with the set of add-drop filters between input and output waveguides. The reconfigurable add-drop multiplexer unit is latchable, passive between reconfigurations, and has low intrinsic insertion loss. Plural units in series can add/drop plural channels.

Abstract: A computer system and method provide a CAD tool by which a mask for an application specific optical integrated circuit, chip, or wafer may be generated both easily and quickly. The method involves the step of receiving the design for an optical circuit with the circuit design including at least one optical component. Each optical component in the optical circuit is defined by one or more geometric shapes, such as a trapezoid, rectangle, or an arcuate polygon. The method further includes the step of retrieving parameters which define the manufacturing standard by which the optical circuit will be fabricated as well as parameters which define the optical components in the optical circuit. Based on the parameters and the geometric shapes, a plot is generated which forms a mask layout for the optical circuit. The mask layout can then be viewed by a graphical editor whereby a designer can receive visual confirmation that the mask layout accurately portrays the desired optical circuit, chip, or wafer.

Abstract: A Brag reflective Mach-Zehnder filter has arms that introduce a .pi. phase difference in transmission but not in reflection. In one embodiment a .pi. phase difference is introduced in one of the two arms between the Bragg grating and one of the couplers. In another embodiment, a phase difference of .pi./2 is introduced in one arm both before and after the grating and the location of the grating in the other arm is shifted. The transmission of the resulting filter is substantially independent of the degree of coupling at the input and the output. WDM systems employing the new filters are also disclosed.

Abstract: In accordance with the invention, arrays optical sources are combined in a multilevel planar optical waveguide structure for insertion into an optical fiber laser. The basic element of the combiner is a planar array of multiple waveguides which converge and are gradually tapered to a single output waveguide. A plurality of such elements integrally formed on successive cladding layers provides a high power stack of vertically aligned outputs. An arrangement is described for using such apparatus in the amplification of optical communications signals.

Abstract: A mechanically stable self-aligned M.times.N optical switch having a low insertion loss is achieved by employing three cleaved silica optical structures containing a plurality of waveguides. A monolithic silica optical structure is cleaved into the three corresponding structures. Each of the first and third structures has a cleaved edge and a respective set of waveguides extending parallel to a corresponding structure surface. The second structure has two substantially parallel cleaved edges and a plurality of sets of waveguides extending parallel to a corresponding structure surface. The corresponding surfaces of the first, second and third structures are positioned on, for example, surfaces of respective first, second and third bases aligned in a common plane. The structures are further positioned with the cleaved edges of the second structure arranged adjacent to and facing respective ones of the cleaved edges of the first and third structures.

Abstract: An optimized waveguide structure enables the functional integration of various passive optic components on a single substrate. The optimized waveguide structure is characterized by a thicker core layer than used for square core waveguides and a core width that changes according to different functional regions of the optic circuit within which it is incorporated. The height (H) of the waveguide core is determined by the thickness of the core layer defined during the fabrication process and is ideally uniform across the circuit. The width (W) of the core, however, is changed between functional regions by the photo-lithographic mask and the chemical etching during the fabrication process. By way of example, an optimized waveguide structure for a P-doped silica planar waveguide with a .DELTA. approximately 0.6% for wavelength .lambda.=1.2-1.7 .mu.m, has a single uniform height of H=6.7 .mu.m and a width that changes between W=4 .mu.m in a coupler region, W=5.5 .mu.m in a bend region, W=9 .mu.

Abstract: Described is a heterostructure semiconductor laser comprising a pair of wide bandgap layers having an active region sandwiched therebetween characterized in that the active region includes a plurality of thin narrow bandgap active layers interleaved with a plurality of thin relatively wider bandgap passive layers. The passive layers are thin enough (e.g., about 10-500 Angstroms) to permit electrons to distribute among the active layers either by tunneling through, or by hopping over, the energy barriers created by the passive layers. The active layers are thin enough (e.g., about 10-500 Angstroms) to separate the quantum levels of electrons confined therein. These lasers exhibit wavelength tunability by changing the thickness of the active layers. Also described is the possibility of threshold reductions resulting from modification of the density of electron states.