Abstract: A chuck assembly for holding a sample includes a shaft; a generally circular chuck member, the shaft extending from a first surface of the chuck member; and a sample holder associated with a second surface of the chuck member. The second surface is opposite the first surface. A sample receiving assembly holds the sample on the sample holder so that the sample remains fixed to the sample holder when the shaft rotates and causes the chuck member and the sample holder to rotate with the shaft. The chuck assembly may be used in a reactor assembly including a reactor chamber for receiving the chuck assembly; a spindle assembly for receiving an end of the shaft distal from the chuck member; and a motor for rotating the spindle assembly and the shaft so that fluid in the chamber flows generally along the shaft in a first direction and through the openings in the chuck member, around the sample holder, and then along a wall of the chamber in a second direction generally opposite to the first direction.

Abstract: A check valve for micro electro mechanical structure devices (MEMS), and in particular pertains to a check valve which is adapted to be employed in connection with micro electro mechanical structure devices which are intended to be employed with supercritical fluids constituting working fluids. In a preferred embodiment, the check valve is equipped with a bypass channel including a freely moveable plug structure which, in the open position of the valve enables the ingress of supercritical fluids under high superatmospheric pressures, and subsequent to the filling of the system, let down to atmospheric pressure, causes the plug to be moved into a permanent valve-closed position.

Abstract: A surface cleaning apparatus comprising a chamber, and a thermal transfer device. The chamber is capable of holding a semiconductor structure therein. The thermal transfer device is connected to the chamber. The thermal transfer device has a surface disposed inside the chamber for contacting the semiconducting structure and controlling a temperature of the semiconductor structure in contact with the surface. The thermal transfer device has a thermal control module connected to the surface for heating and cooling the surface to thermally cycle the surface. The thermal control module effects a substantially immediate thermal response of the surface when thermally recycling the surface.

Abstract: A method and apparatus are provided for removing solid and/or liquid residues from electronic components such as semiconductor wafers utilizing liquid or supercritical carbon dioxide which is solidified on the surface of the wafer and then vaporized and removed from the system. In a preferred embodiment the solidification and vaporizing steps are repeated (cycled) before removal of the CO2 from the vessel. The residues are carried away with the vaporized carbon dioxide.

Abstract: Methods are provided for making microfilters by subtractive techniques which remove a component or part of a filter material to form pores in the filter material and additive techniques which deposit a filter material onto a porous underlying substrate. All the methods employ a supercritical fluid or mixture which have very high solvency properties and low viscosity and CO2 is the preferred supercritical fluid.

Abstract: A method and apparatus are provided for in situ monitoring and analyzing of process parameters for semiconductor fabrication processes including cleaning semiconductor wafers utilizing a supercritical fluid or a high pressure liquid such as CO2. The method and apparatus utilize a spectrometer having a reflective mirror proximate the vessel holding the high pressure fluid. NIR radiation transmitted into the vessel through a window and out of the vessel through an opposed window is reflected and detected and measured and the composition of the fluid in the pressure vessel is determined allowing the user to control process parameters based on the measured composition.

Abstract: A process and apparatus for cleaning filters prior to recycling or disposal. In this process and apparatus liquid or supercritical carbon dioxide contacts the plugged pores of a filter under conditions in which carbon dioxide remains in the liquid or supercritical state.

Abstract: A workpiece holder for processing a workpiece in a chamber of a liquified fluid. In one embodiment, the workpiece holder includes a cylindrically shaped rotator having an exterior wall and at least one fluid guide on the exterior wall. The rotator is adapted to rotate and provide fluid flow across a first end of the rotator, and is adapted to provide fluid flow and mixing perpendicular to a surface of the first end of the rotator. A fixture is coupled to the first end of the rotator for securing the workpiece to the first end of the rotator.

Abstract: The invention relates generally to photolithographic techniques, and particularly, but not by way of limitation, to a method for preventing the collapse of the image pattern during the stage of drying the image. The invention also relates to structures fabricated using the inventive method.

Abstract: A process of removing photoresist, previously subjected to ion implantation, from the surface of a workpiece. The process involves contacting the workpiece with a composition which includes liquid or supercritical carbon dioxide and between about 2% and about 20% of an alkanol having the structural formula CxX2x+1OH, where X is fluorine, hydrogen or mixtures thereof; and x is an integer of 1 to 8, said percentages being by volume, based on the total weight of the composition.

Abstract: A process of silylation of object surfaces using a mixture of a silylation agent in admixture with an inert liquified gas, such as carbon dioxide.

Abstract: The invention relates generally to photolithographic techniques, and particularly, but not by way of limitation, to a method for preventing the collapse of the image pattern during the stage of drying the image. The invention also relates to structures fabricated using the inventive method.

Abstract: A process of providing a semiconductor device with electrical interconnection capability wherein a sacrificial material is introduced into topographical features of the semiconductor device prior to chemical mechanical polishing so that debris formed during chemical mechanical polishing is incapable of falling into topographical features present on the semiconductor device. The sacrificial material is thereupon removed by liquid or supercritical carbon dioxide.

Abstract: A dielectric material formed by contacting a low dielectric constant polymer with liquid or supercritical carbon dioxide, under thermodynamic conditions which maintain the carbon dioxide in the liquid or supercritical state, wherein a porous product is formed. Thereupon, thermodynamic conditions are changed to ambient wherein carbon dioxide escapes from the pores and is replaced with air.

Abstract: A process and apparatus for the processing of a precision surface. The process and apparatus includes contacting of a precision surface in a process chamber with liquid or supercritical carbon dioxide in which sonic waves are generated.

Abstract: A workpiece holder for processing a workpiece in a chamber of a liquified fluid. In one embodiment, the workpiece holder includes a cylindrically shaped rotator having an exterior wall and at least one fluid guide on the exterior wall. The rotator is adapted to rotate and provide fluid flow across a first end of the rotator, and is adapted to provide fluid flow and mixing perpendicular to a surface of the first end of the rotator. A fixture is coupled to the first end of the rotator for securing the workpiece to the first end of the rotator.

Abstract: An electromechanical device having a size no larger than about 10 microns utilizing a working fluid in the high pressure liquid or supercritical fluid state. A process of preparing the electromechanical device involves the introduction of the liquid or supercritical fluid therein which permits the retention of the working fluid in the liquid or supercritical state after introduction.

Abstract: An apparatus and method is described for cleaning semiconductor wafers using a dilute aqueous solution including at least 80% deionized water, sulfuric acid, an oxidant such as hydrogen peroxide, and a small amount of hydrofluoric acid (HF), preferably in the range of about 5 ppm to about 12 ppm. The automated system mixes the water, sulfuric acid, hydrogen peroxide, and HF to form a cleaning solution having a target HF concentration within the preferred range, for example at 8 ppm. Subsequently, the system maintains the HF concentration at least within about 0.5 ppm to about 1 ppm of the target HF concentration. Thus the system allows effective and predictable cleaning of semiconductor wafers while minimizing damage to metal features, and minimizing cost and waste disposal impacts.

Abstract: Fixtures and methods for clamping workpieces in a workplace to enable the optimized exposure thereof to a stream or flow of a supercritical fluid. Provided is a rotatably indexable chuck or locator mounting the workpiece and enabling orientating the latter in specific static pitch position within a high pressure vessel in order to subject the workpiece to a full frontal exposure to the supercritical fluid stream within the vessel. This mounting arrangement facilitates an optimum positioning of the workpiece being processed in the flow path of the supercritical fluid stream while oriented in selectively indexed rotational positions.

Abstract: A method and an apparatus, the apparatus including appropriate valves and conduits, for increasing throughput in pressurized fluid processing including storing in a storage chamber of the apparatus a quantity of fluid at a pressure higher than a pressure at which an operation is to take place, while a processing chamber is depressurized to allow reception of a new object; sealing the processing chamber; and allowing fluid stored in the storage chamber to pass to the processing chamber to re-pressurize the processing chamber before performing the operation. The fluid may be preheated in the storage chamber to further reduce processing times.