Patents by Inventor CHARLES KANG

CHARLES KANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250127912
    Abstract: The present disclosure provides compositions for delivering polynucleotides and methods of use thereof for treating genetic diseases. The present disclosure also provides polynucleotide conjugates. The present disclosure further provides anti-transferrin receptor antibodies.
    Type: Application
    Filed: June 21, 2024
    Publication date: April 24, 2025
    Inventors: Anthony Saleh, Charles Marusak, Tishan Williams, Fu-An Kang
  • Publication number: 20250092272
    Abstract: The present invention relates to crosslinkable ink compositions and the preparation and use thereof.
    Type: Application
    Filed: August 21, 2024
    Publication date: March 20, 2025
    Inventors: Sanghyun Jeon, Yash Laxman Kamble, Haisu Kang, Jiachun Shi, Simon Andrew Rogers, Damien Guironnet, Charles Sing, Ying Diao, Bijal B. Patel
  • Publication number: 20250069965
    Abstract: A package comprising an integrated device and a substrate coupled to the integrated device through at least a plurality of solder interconnects. The substrate comprises at least one dielectric layer; a frame at least partially located in the at least one dielectric layer; and a plurality of interconnects located at least partially in the at least one dielectric layer. The frame may be an embedded frame.
    Type: Application
    Filed: August 25, 2023
    Publication date: February 27, 2025
    Inventors: Ryan LANE, Charles David PAYNTER, William STONE, Ahmer SYED, Yue LI, Kuiwon KANG, Wei WANG, Durodami LISK
  • Publication number: 20200279783
    Abstract: Process control during manufacture of semiconductor devices by collecting scatterometric spectra of a FinFET reference fin structure on a reference semiconductor wafer at a first checkpoint proximate to a first processing step during fabrication of the reference semiconductor wafer, collecting reference measurements of the reference fin structure at a second checkpoint proximate to a second processing step subsequent to the first checkpoint, and performing machine learning to identify correspondence between the scatterometric spectra and values based on the reference measurements and train a prediction model for producing a prediction value associated with a corresponding production fin structure of the FinFET on a production semiconductor wafer based on scatterometric spectra of the production fin structure collected at the corresponding first checkpoint during fabrication of the production semiconductor wafer.
    Type: Application
    Filed: February 28, 2019
    Publication date: September 3, 2020
    Inventors: PADRAIG TIMONEY, TAHER KAGALWALA, ALOK VAID, SRIDHAR MAHENDRAKAR, DHAIRYA DIXIT, SHAY YOGEV, MATTHEW SENDELBACH, CHARLES KANG