Patents by Inventor CHARLES KANG

CHARLES KANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240139112
    Abstract: In an embodiment, the invention provides an isolated population of exosomes comprising interleukin-27 (IL-27) or interleukin-35 (IL-35). In an embodiment, the invention also provides a method of preparing a population of exosomes comprising interleukin-27 (IL-27), the method comprising: (a) isolating CD19+B2 cells or B1a cells; (b) activating the isolated cells with a LPS or a BCR agonist to provide activated cells; and (c) isolating exosomes secreted from the activated cells. In an embodiment, the invention also provides a method of preparing a population of exosomes comprising interleukin-35 (IL-35), the method comprising: (a) isolating CD138+plasma cells; (b) activating the isolated cells with a LPS or a BCR agonist to provide activated cells; and (c) isolating exosomes secreted from the activated cells. Additional embodiments of the invention are as described.
    Type: Application
    Filed: May 28, 2021
    Publication date: May 2, 2024
    Applicant: The United States of America,as represented by the Secretary,Department of Health and Human Services
    Inventors: Charles E. Egwuagu, Minkyung Kang
  • Publication number: 20200279783
    Abstract: Process control during manufacture of semiconductor devices by collecting scatterometric spectra of a FinFET reference fin structure on a reference semiconductor wafer at a first checkpoint proximate to a first processing step during fabrication of the reference semiconductor wafer, collecting reference measurements of the reference fin structure at a second checkpoint proximate to a second processing step subsequent to the first checkpoint, and performing machine learning to identify correspondence between the scatterometric spectra and values based on the reference measurements and train a prediction model for producing a prediction value associated with a corresponding production fin structure of the FinFET on a production semiconductor wafer based on scatterometric spectra of the production fin structure collected at the corresponding first checkpoint during fabrication of the production semiconductor wafer.
    Type: Application
    Filed: February 28, 2019
    Publication date: September 3, 2020
    Inventors: PADRAIG TIMONEY, TAHER KAGALWALA, ALOK VAID, SRIDHAR MAHENDRAKAR, DHAIRYA DIXIT, SHAY YOGEV, MATTHEW SENDELBACH, CHARLES KANG