Patents by Inventor Charles L. TSCHIRHART

Charles L. TSCHIRHART has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nanopillar field-effect and junction transistors with functionalized gate and base electrodes
    Patent number: 9966443
    Abstract: Systems and methods for molecular sensing are described. Molecular sensors are described which are based on field-effect or bipolar junction transistors. These transistors have a nanopillar with a functionalized layer contacted to either the base or the gate electrode. The functional layer can bind molecules, which causes an electrical signal in the sensor.
    Type: Grant
    Filed: May 22, 2015
    Date of Patent: May 8, 2018
    Assignees: California Institute of Technology, SANOFI
    Inventors: Aditya Rajagopal, Chieh-feng Chang, Oliver Plettenburg, Stefan Petry, Axel Scherer, Charles L. Tschirhart
  • Nanopillar field-effect and junction transistors with functionalized gate and base electrodes
    Patent number: 9960238
    Abstract: Systems and methods for molecular sensing are described. Molecular sensors are described which are based on field-effect or bipolar junction transistors. These transistors have a nanopillar with a functionalized layer contacted to either the base or the gate electrode. The functional layer can bind molecules, which causes an electrical signal in the sensor.
    Type: Grant
    Filed: May 22, 2015
    Date of Patent: May 1, 2018
    Assignees: CALIFORNIA INSTITUTE OF TECHNOLOGY, SANOFI
    Inventors: Aditya Rajagopal, Chieh-feng Chang, Oliver Plettenburg, Stefan Petry, Axel Scherer, Charles L. Tschirhart
  • NANOPILLAR FIELD-EFFECT AND JUNCTION TRANSISTORS WITH FUNCTIONALIZED GATE AND BASE ELECTRODES
    Publication number: 20150279949
    Abstract: Systems and methods for molecular sensing are described. Molecular sensors are described which are based on field-effect or bipolar junction transistors. These transistors have a nanopillar with a functionalized layer contacted to either the base or the gate electrode. The functional layer can bind molecules, which causes an electrical signal in the sensor.
    Type: Application
    Filed: May 22, 2015
    Publication date: October 1, 2015
    Inventors: Aditya RAJAGOPAL, Chieh-feng CHANG, Oliver PLETTENBURG, Stefan PETRY, Axel SCHERER, Charles L. TSCHIRHART
  • NANOPILLAR FIELD-EFFECT AND JUNCTION TRANSISTORS WITH FUNCTIONALIZED GATE AND BASE ELECTRODES
    Publication number: 20150279948
    Abstract: Systems and methods for molecular sensing are described. Molecular sensors are described which are based on field-effect or bipolar junction transistors. These transistors have a nanopillar with a functionalized layer contacted to either the base or the gate electrode. The functional layer can bind molecules, which causes an electrical signal in the sensor.
    Type: Application
    Filed: May 22, 2015
    Publication date: October 1, 2015
    Inventors: Aditya RAJAGOPAL, Chieh-feng CHANG, Oliver PLETTENBURG, Stefan PETRY, Axel SCHERER, Charles L. TSCHIRHART
  • Nanopillar field-effect and junction transistors with functionalized gate and base electrodes
    Patent number: 9070733
    Abstract: Systems and methods for molecular sensing are described. Molecular sensors are described which are based on field-effect or bipolar junction transistors. These transistors have a nanopillar with a functionalized layer contacted to either the base or the gate electrode. The functional layer can bind molecules, which causes an electrical signal in the sensor.
    Type: Grant
    Filed: July 12, 2013
    Date of Patent: June 30, 2015
    Assignee: CALIFORNIA INSTITUTE OF TECHNOLOGY
    Inventors: Aditya Rajagopal, Chieh-feng Chang, Oliver Plettenburg, Stefan Petry, Axel Scherer, Charles L. Tschirhart
  • NANOPILLAR FIELD-EFFECT AND JUNCTION TRANSISTORS WITH FUNCTIONALIZED GATE AND BASE ELECTRODES
    Publication number: 20140030819
    Abstract: Systems and methods for molecular sensing are described. Molecular sensors are described which are based on field-effect or bipolar junction transistors. These transistors have a nanopillar with a functionalized layer contacted to either the base or the gate electrode. The functional layer can bind molecules, which causes an electrical signal in the sensor.
    Type: Application
    Filed: July 12, 2013
    Publication date: January 30, 2014
    Applicants: SANOFI, CALIFORNIA INSTITUTE OF TECHNOLOGY
    Inventors: Aditya RAJAGOPAL, Chieh-feng CHANG, Oliver PLETTENBURG, Stefan PETRY, Axel SCHERER, Charles L. TSCHIRHART