Abstract: XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.

Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.

Abstract: XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.

Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.

Abstract: XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.

Abstract: XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.

Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.

Abstract: A compliant shin guard includes an outer shell composed of an impact absorbing material and an inner padding mounted to the inner surface of the outer shell. A plurality of vents extend through the outer shell and the inner padding, the plurality of vents being distributed across the outer surface of the outer shell. A raised channel extends at least partially along the length of the outer shell to provide rigidity to the outer shell.

Abstract: A compliant shin guard includes an outer shell composed of an impact absorbing material and an inner padding mounted to the inner surface of the outer shell. A plurality of vents extend through the outer shell and the inner padding, the plurality of vents being distributed across the outer surface of the outer shell. A raised channel extends at least partially along the length of the outer shell to provide rigidity to the outer shell.

Abstract: A compliant shin guard includes an outer shell composed of an impact absorbing material and an inner padding mounted to the inner surface of the outer shell. A plurality of vents extend through the outer shell and the inner padding, the plurality of vents being distributed across the outer surface of the outer shell. A raised channel extends at least partially along the length of the outer shell to provide rigidity to the outer shell.

Abstract: A compliant shin guard includes an outer shell composed of an impact absorbing material and an inner padding mounted to the inner surface of the outer shell. A plurality of vents extend through the outer shell and the inner padding, the plurality of vents being distributed across the outer surface of the outer shell. A raised channel extends at least partially along the length of the outer shell to provide rigidity to the outer shell.

Abstract: Methods and systems for removing protective films from microfeature workpieces are disclosed herein. One particular embodiment of such a method comprises separating at least a portion of a protective tape from a workpiece to which the protective tape is attached with a separator configured to drive against an interface between the protective tape and the workpiece. The method further includes engaging the portion of the protective tape detached from the workpiece with a removal system.

Abstract: A folded interposer used to achieve a high density semiconductor package is disclosed. The folded interposer is comprised of a thin, flexible material that can be folded around one or multiple semiconductor dice in a serpentine fashion. The semiconductor dice are then attached to a substrate through electrical contacts on the interposer. The folded interposer allows multiple semiconductor dice to be efficiently stacked in a high density semiconductor package by reducing the unused or wasted space between stacked semiconductor dice. Vias extending through the folded interposer provide electrical communication between the semiconductor dice and the substrate. The present invention also relates to a method of packaging semiconductor dice in a high density arrangement and a method of forming the high density semiconductor package.

Abstract: Methods relating to forming interconnects through injection of conductive materials, to fabricating semiconductor component assemblies, and to resulting assemblies. A semiconductor component substrate, such as a semiconductor die or other substrate, has dielectric material disposed on a surface thereof, surrounding but not covering interconnect elements, such as bond pads, on that surface. A second semiconductor component substrate, such as a carrier substrate with interconnect elements such as terminal pads, is adhered to the first semiconductor component substrate, forming a semiconductor package assembly having interconnect voids between the corresponding interconnect elements. A flowable conductive material is then injected into each interconnect void using an injection needle that passes through one of the substrates into the interconnect void, forming a conductive interconnect between the bond pads and terminal pads of the substrates.

Abstract: Methods relating to forming interconnects through injection of conductive materials, to fabricating semiconductor component assemblies, and to resulting assemblies. A semiconductor component substrate, such as a semiconductor die or other substrate, has dielectric material disposed on a surface thereof, surrounding but not covering interconnect elements, such as bond pads, on that surface. A second semiconductor component substrate, such as a carrier substrate with interconnect elements such as terminal pads, is adhered to the first semiconductor component substrate, forming a semiconductor package assembly having interconnect voids between the corresponding interconnect elements. A flowable conductive material is then injected into each interconnect void using an injection needle that passes through one of the substrates into the interconnect void, forming a conductive interconnect between the bond pads and terminal pads of the substrates.

Abstract: Methods relating to forming interconnects through injection of conductive materials, to fabricating semiconductor component assemblies, and to resulting assemblies. A semiconductor component substrate, such as a semiconductor die or other substrate, has dielectric material disposed on a surface thereof, surrounding but not covering interconnect elements, such as bond pads, on that surface. A second semiconductor component substrate, such as a carrier substrate with interconnect elements such as terminal pads, is adhered to the first semiconductor component substrate, forming a semiconductor package assembly having interconnect voids between the corresponding interconnect elements. A flowable conductive material is then injected into each interconnect void using an injection needle that passes through one of the substrates into the interconnect void, forming a conductive interconnect between the bond pads and terminal pads of the substrates.

Abstract: A semiconductor lead frame, a semiconductor package, and a method for fabricating semiconductor packages, are provided. The lead frame includes side rails and multiple patterns of lead fingers. The lead frame also includes die mounting paddles associated with the patterns of lead fingers, and support members that attach the mounting paddles to the side rails. The mounting paddles include stiffening members such as indentations, ridges or corrugations formed in a die mounting surface thereof. The stiffening members prevent bowing of the mounting paddles, provide an increased surface area for bonding dice to the mounting paddles, and allow the mounting paddles to flex to accommodate thermal stresses. The support members for the mounting paddles can also have a stiffening cross sectional configuration to help maintain a planar orientation and location of the mounting paddles.

Abstract: The present invention is embodied in a method for screen printing a target object, such as a substrate, which allows for the removal of a misaligned screen printed pattern without causing damage to the target object. A removable barrier layer is applied to the substrate and the pattern screen printed on the removable barrier layer. If the pattern is not properly aligned, the removable barrier layer with the screen printed pattern attached is removed from the substrate and the substrate can be reprinted. If the pattern is properly aligned, only the removable barrier layer is removed and the pattern drops onto and adheres to the substrate.

Abstract: A closed loop conveyor for viscid material is provided with a plurality of spaced, planar conveying flights within a material conveying conduit. The flights are mounted on an endless transporting chain and are moved from one or more charge stations where material is loaded into the conduit to one or more gravity discharge stations where the material falls out of the conveyor. At the discharge station the planar conveying flights are scraped clean by a rotatable assembly. The assembly preferably comprises a circular plate mounted for rotation in a generally vertical plane adjacent to the conveying path and about a substantially horizontal axis. A number of scraper blades are mounted on the circular plate substantially uniformly, peripherally spaced from one another and extend away from one side of the plate in a generally horizontal direction toward a conveying path defined by movement of the flights.