Patents by Inventor Charles Lieber

Charles Lieber has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080003839
    Abstract: Nanowires are disclosed which comprise transition metal oxides. The transition metal oxides may include oxides of group II, group III, group IV and lanthanide metals. Also disclosed are methods for making nanowires which comprise injecting decomposition agents into a solution comprising solvents and metallic alkoxide or metallic salt precursors.
    Type: Application
    Filed: June 19, 2007
    Publication date: January 3, 2008
    Inventors: Hongkun Park, Charles Lieber, Jeffrey Urban, Qian Gu, Wan Yun
  • Publication number: 20070281156
    Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.
    Type: Application
    Filed: March 21, 2006
    Publication date: December 6, 2007
    Applicant: President and Fellows of Harvard College
    Inventors: Charles Lieber, Xiangfeng Duan, Yi Cui, Yu Huang, Mark Gudiksen, Lincoln Lauhon, Jianfang Wang, Hongkun Park, Qingqiao Wei, Wenjie Liang, David Smith, Deli Wang, Zhaohui Zhong
  • Publication number: 20070272951
    Abstract: Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.
    Type: Application
    Filed: August 6, 2007
    Publication date: November 29, 2007
    Applicant: President and Fellows of Harvard College
    Inventors: Charles Lieber, Thomas Rueckes, Ernesto Joselevich, Kevin Kim
  • Publication number: 20070264623
    Abstract: The present invention generally relates to nanoscale wires for use in determining analytes suspected to be present in a sample, especially in connection with determining information about a sample containing, or suspected of containing, two or more analytes. For example, the invention can involve a competitive, uncompetitive, or non-competitive binding assay including a nanoscale wire to a sample containing a species able to interact with the retain entity to produce a product, where the sample also contains or is suspected of containing a second species able to interact with the reaction entity to prevent production of the product resulting from interaction of the first species and the reaction entity. Based upon determination of production of the product, determination of the second species in the sample can be made.
    Type: Application
    Filed: June 15, 2005
    Publication date: November 15, 2007
    Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGE
    Inventors: Wayne Wang, Chuo Chen, Keng-Hui Lin, Ying Fang, Charles Lieber
  • Publication number: 20070252136
    Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1.
    Type: Application
    Filed: July 2, 2007
    Publication date: November 1, 2007
    Applicant: President and Fellows of Harvard College
    Inventors: Charles Lieber, Yi Cui, Xiangfeng Duan, Yu Huang
  • Publication number: 20070161237
    Abstract: Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.
    Type: Application
    Filed: September 29, 2006
    Publication date: July 12, 2007
    Applicant: President and Fellows of Harvard College
    Inventors: Charles Lieber, Thomas Rueckes, Ernesto Joselevich, Kevin Kim
  • Publication number: 20070158766
    Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.
    Type: Application
    Filed: October 17, 2006
    Publication date: July 12, 2007
    Applicant: President and Fellows of Harvard College
    Inventors: Charles Lieber, Hongkun Park, Qingqiao Wei, Yi Cui, Wenjie Liang
  • Publication number: 20070048492
    Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1.
    Type: Application
    Filed: October 4, 2006
    Publication date: March 1, 2007
    Applicant: President and Fellows of Harvard College
    Inventors: Charles Lieber, Yi Cui, Xiangfeng Duan, Yu Huang
  • Publication number: 20070045667
    Abstract: Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.
    Type: Application
    Filed: November 3, 2006
    Publication date: March 1, 2007
    Applicant: President and Fellows of Harvard College
    Inventors: Charles Lieber, Thomas Rueckes, Ernesto Joselevich, Kevin Kim
  • Publication number: 20070032023
    Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1.
    Type: Application
    Filed: October 4, 2006
    Publication date: February 8, 2007
    Applicant: President and Fellows of Harvard College
    Inventors: Charles Lieber, Yi Cui, Xiangfeng Duan, Yu Huang
  • Publication number: 20070032051
    Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1.
    Type: Application
    Filed: October 4, 2006
    Publication date: February 8, 2007
    Applicant: President and fellows of Harvard College
    Inventors: Charles Lieber, Yi Cui, Xiangfeng Duan, Yu Huang
  • Publication number: 20070032052
    Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1.
    Type: Application
    Filed: October 4, 2006
    Publication date: February 8, 2007
    Applicant: President and Fellows of Harvard College
    Inventors: Charles Lieber, Yi Cui, Xiangfeng Duan, Yu Huang
  • Publication number: 20070026645
    Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1.
    Type: Application
    Filed: October 4, 2006
    Publication date: February 1, 2007
    Applicant: President and Fellows of Harvard College
    Inventors: Charles Lieber, Yi Cui, Xiangfeng Duan, Yu Huang
  • Publication number: 20060269927
    Abstract: Various aspects of the present invention generally relate to nanoscale wire devices and methods for use in determining analytes suspected to be present in a sample, and systems and methods of immobilizing entities such as reaction entities relative to nanoscale wires. In one aspect, a nucleic acid, such as DNA, may be immobilized relative to a nanoscale wire, and in some cases, grown from the nanoscale wire. In certain embodiments, the nucleic acid may interact with entities such as other nucleic acids, proteins, etc., and in some cases, such interactions may be reversible. As an example, an enzyme such as telomerase may be allowed to bind to DNA immobilized relative to a nanoscale wire. The telomerase may extend the length of the DNA, for instance, by reaction with free deoxynucleotide triphosphates in solution; additionally, various properties of the nucleic acid may be determined, for example, using electric field interactions between the nucleic acid and the nanoscale wire.
    Type: Application
    Filed: May 25, 2005
    Publication date: November 30, 2006
    Inventors: Charles Lieber, Fernando Patolsky, Gengfeng Zheng
  • Publication number: 20060237749
    Abstract: Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.
    Type: Application
    Filed: November 21, 2005
    Publication date: October 26, 2006
    Applicant: President and Fellows of Harvard College
    Inventors: Charles Lieber, Thomas Rueckes, Ernesto Joselevich, Kevin Kim
  • Publication number: 20060240591
    Abstract: A system and method for manipulating and processing nanowires in solution with arrays of holographic optical traps. The system and method of the present invention is capable of creating hundreds of individually controlled optical traps with the ability to manipulate objects in three dimensions. Individual nanowires with cross-sections as small as 20 nm and lengths exceeding 20 ?m are capable of being isolated, translated, rotated and deposited onto a substrate with holographic optical trap arrays under conditions where single traps have no discernible influence. Spatially localized photothermal and photochemical processes induced by the well-focused traps can also be used to melt localized domains on individual nanowires and to fuse nanowire junctions.
    Type: Application
    Filed: January 11, 2006
    Publication date: October 26, 2006
    Inventors: David Grier, Ritesh Agarwal, Guihua Yu, Charles Lieber, Kosta Ladavac, Yael Roichman
  • Publication number: 20060220067
    Abstract: Electrical devices comprised of nanoscopic wires are described, along with methods of their manufacture and use. The nanoscopic wires can be nanotubes, preferably single-walled carbon nanotubes. They can be arranged in crossbar arrays using chemically patterned surfaces for direction, via chemical vapor deposition. Chemical vapor deposition also can be used to form nanotubes in arrays in the presence of directing electric fields, optionally in combination with self-assembled monolayer patterns. Bistable devices are described.
    Type: Application
    Filed: December 20, 2005
    Publication date: October 5, 2006
    Applicant: President and Fellows of Harvard College
    Inventors: Charles Lieber, Thomas Rueckes, Ernesto Joselevich, Kevin Kim
  • Publication number: 20060175601
    Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.
    Type: Application
    Filed: June 30, 2005
    Publication date: August 10, 2006
    Applicant: President and Fellows of Harvard College
    Inventors: Charles Lieber, Xiangfeng Duan, Yi Cui, Yu Huang, Mark Gudiksen, Lincoln Lauhon, Jianfang Wang, Hongkun Park, Qingqiao Wei, Wenjie Liang, David Smith, Deli Wang, Zhaohui Zhong
  • Publication number: 20060161876
    Abstract: An architecture for nanoscale electronics is disclosed. The architecture comprises arrays of crossed nanoscale wires having selectively programmable crosspoints. Nanoscale wires of one array are shared by other arrays, thus providing signal propagation between the arrays. Nanoscale signal restoration elements are also provided, allowing an output of a first array to be used as an input to a second array. Signal restoration occurs without routing of the signal to non-nanoscale wires.
    Type: Application
    Filed: January 31, 2006
    Publication date: July 20, 2006
    Inventors: Andre DeHon, Charles Lieber
  • Publication number: 20060054936
    Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.
    Type: Application
    Filed: December 15, 2004
    Publication date: March 16, 2006
    Applicant: President and Fellows of Harvard College
    Inventors: Charles Lieber, Hongkun Park, Qingqiao Wei, Yi Cui, Wenjie Liang