Abstract: The present disclosure relates to semiconductor based Josephson junctions and their applications within the field of quantum computing, in particular a tuneable Josephson junction device has been used to construct a gateable transmon qubit. One embodiment relates to a Josephson junction comprising an elongated hybrid nanostructure comprising superconductor and semiconductor materials and a weak link, wherein the weak link is formed by a semiconductor segment of the elongated hybrid nanostructure wherein the superconductor material has been removed to provide a semiconductor weak link.

Abstract: The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.

Abstract: The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.

Abstract: The present disclosure relates to semiconductor based Josephson junctions and their applications within the field of quantum computing, in particular a tuneable Josephson junction device has been used to construct a gateable transmon qubit. One embodiment relates to a Josephson junction comprising an elongated hybrid nanostructure comprising superconductor and semiconductor materials and a weak link, wherein the weak link is formed by a semiconductor segment of the elongated hybrid nanostructure wherein the superconductor material has been removed to provide a semiconductor weak link.

Abstract: The present disclosure relates to a device and method for forming efficient quantum devices, in particular quantum devices that have not been contaminated in ex-situ processes. In particular the presently disclosed method can be applied for manufacturing of a Josephson junction which is an element in a tunable superconducting qubit.

Abstract: The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.

Abstract: The present disclosure relates to a device and method for forming efficient quantum devices, in particular quantum devices that have not been contaminated in ex-situ processes. In particular the presently disclosed method can be applied for manufacturing of a Josephson junction which is an element in a tunable superconducting qubit.

Abstract: The present disclosure relates to semiconductor based Josephson junctions and their applications within the field of quantum computing, in particular a tuneable Josephson junction device has been used to construct a gateable transmon qubit. One embodiment relates to a Josephson junction comprising an elongated hybrid nanostructure comprising superconductor and semiconductor materials and a weak link, wherein the weak link is formed by a semiconductor segment of the elongated hybrid nanostructure wherein the superconductor material has been removed to provide a semiconductor weak link.

Abstract: A device is disclosed to reduce noise and temperature during measurements in cryostats comprising, the device comprising any of, or a combination of, the following PC boards, each conditioning a different frequency range: a RC-PC board having a two-stage RC filter in series with a surface-mounted pi-filter; a RF-PC board having a plurality of surface-mounted pi-filters in series, each configured with different low-frequency cutoff frequencies; and a Sapphire-PC board having a sapphire substrate having high heat conductivity at low temperature with thin metal films routed in a meandering fashion.

Abstract: The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.

Abstract: The present disclosure relates to semiconductor based Josephson junctions and their applications within the field of quantum computing, in particular a tuneable Josephson junction device has been used to construct a gateable transmon qubit. One embodiment relates to a Josephson junction comprising an elongated hybrid nanostructure comprising superconductor and semiconductor materials and a weak link, wherein the weak link is formed by a semiconductor segment of the elongated hybrid nanostructure wherein the superconductor material has been removed to provide a semiconductor weak link.

Abstract: A device is disclosed to reduce noise and temperature during measurements in cryostats comprising, the device comprising any of, or a combination of, the following PC boards, each conditioning a different frequency range: a RC-PC board having a two-stage RC filter in series with a surface-mounted pi-filter; a RF-PC board having a plurality of surface-mounted pi-filters in series, each configured with different low-frequency cutoff frequencies; and a Sapphire-PC board having a sapphire substrate having high heat conductivity at low temperature with thin metal films routed in a meandering fashion.

Abstract: An imaging agent is disclosed for use in nuclear magnetic resonance imaging. The imaging agent includes a first substance and a second substance. The first substance includes at least one atom having non-zero nuclear spin providing a polarized magnetic orientation. The second substance is bound to the first substance and inhibits physical contact between the at least one atom and other atoms and molecules to thereby inhibit spin relaxation of the polarized magnetic orientation of the at least one atom.

Abstract: The invention provides methods functionalizing a planar surface of a graphene layer, a graphite surface, or microelectronic structure. The graphene layer, graphite surface, or planar microelectronic structure surface is exposed to at least one vapor including at least one functionalization species that non-covalently bonds to the graphene layer, a graphite surface, or planar microelectronic surface while providing a functionalization layer of chemically functional groups, to produce a functionalized graphene layer, graphite surface, or planar microelectronic surface.

Abstract: A graphene device includes a graphene layer and a back gate electrode connected to apply a global electrical bias to the graphene from a first surface of the graphene. At least two graphene device electrodes are each connected to a corresponding and distinct region of the graphene at a second graphene surface. A dielectric layer blanket-coats the second graphene surface and the device electrodes. At least one top gate electrode is disposed on the dielectric layer and extends over a distinct one of the device electrodes and at least a portion of a corresponding graphene region. Each top gate electrode is connected to apply an electrical charge carrier bias to the graphene region over which that top gate electrode extends to produce a selected charge carrier type in that graphene region. Such a carbon structure can be exposed to a beam of electrons to compensate for extrinsic doping of the carbon.

Abstract: Various methods of telemetry for nuclear magnetic resonance applications are described. NMR-active particles are introduced into a system which is to undergo an NMR measurement. In various embodiments, the NMR-active particles have a resonance peak in a spectral region which is substantially free from any NMR signal originating from material native to the system. In some embodiments, the NMR-active particles are chemically functionalized to target a constituent within the system. In certain applications, changes in the detected resonance peak can be used to quantify certain characteristics about the system, e.g., a concentration of an analyte, whether a targeted constituent is present within the system.

Abstract: Methods for making collections of small particles having spin-lattice relaxation times greater than about 5 minutes are described. The long-T1 particles are useful as imaging agents for nuclear magnetic resonance imaging. In one embodiment, bulk silicon wafers are reduced to particles in a machining process, and the particles processed to obtain a collection of particles having an average size of about 300 nanometers and a T1 relaxation time of about 15 minutes. The particles can be subjected to post-fabrication processing to alter their surface composition or the chemical functionality of their surface. In certain embodiments, porous particles produced by the inventive methods can be loaded with pharmaceutical drugs and used to track and evaluate delivery and effectiveness of drugs.

Abstract: The present invention generally relates to methods for accelerating the ex vivo induction of nuclear hyperpolarization in imaging agents.

Abstract: An imaging agent is disclosed for use in nuclear magnetic resonance imaging. The imaging agent includes a first substance and a second substance. The first substance includes at least one atom having non-zero nuclear spin providing a polarized magnetic orientation. The second substance is bound to the first substance and inhibits physical contact between the at least one atom and other atoms and molecules to thereby inhibit spin relaxation of the polarized magnetic orientation of the at least one atom.

Abstract: The present invention generally relates to compositions, systems and methods for inducing nuclear hyperpolarization in imaging agents after they have been introduced into a subject.