Abstract: A low-k interconnect dielectric layer is strengthened by forming pillars of hardened material in the low-k film. An E-beam source is used to expose a plurality of pillar locations. The locations are exposed with a predetermined power and exposure time to convert the low-k film in the selected locations to pillars having higher hardness and strength than the surrounding portions of the low-k film.

Abstract: A method of diverting void diffusion in an integrated circuit includes steps of forming an electrical conductor having a boundary in a first electrically conductive layer of an integrated circuit, forming a via inside the boundary of the electrical conductor in a dielectric layer between the first electrically conductive layer and a second electrically conductive layer of the integrated circuit, and forming a slot between the via and the boundary of the electrical conductor for diverting void diffusion in the electrical conductor away from the via.

Abstract: A method and apparatus for redirecting void diffusion away from vias in an integrated circuit design includes steps of forming an electrical conductor in a first electrically conductive layer of an integrated circuit design, forming a via between a distal end of the electrical conductor and a second electrically conductive layer of the integrated circuit design, and reducing tensile stress in the electrical conductor to divert void diffusion away from the via.

Abstract: Embodiments of the invention include an extreme low-K circuit structure formed on a substrate having a plurality of electrically conductive structures. A lattice structure of bracing material configured to support the electrically conductive structures is formed on the substrate and also can define regions of extreme low-K dielectric space between the electrically conductive structures. Additionally, methods for creating dielectric structures on a substrate are disclosed.

Abstract: An apparatus for controlling the substrate temperature of a substrate during processing of the substrate at a process energy. A chuck temperature input receives temperature measurements from temperature sensors at a substrate chuck, and a temperature set point input receives temperature set points. The temperature set points define a range of temperatures within which the apparatus maintains the substrate temperature. A chuck temperature controller output sends control signals to a chuck temperature controller, which signals are operable to selectively increase and decrease the chuck temperature. A process energy output sends control signals that are operable to selectively increase and decrease the process energy during the processing of the substrate. A controller compares the temperature measurements received from the temperature sensors at the substrate chuck through the chuck temperature input to the temperature set points received through the temperature set point input.

Abstract: A low-k interconnect dielectric layer is strengthened by forming pillars of hardened material in the low-k film. An E-beam source is used to expose a plurality of pillar locations. The locations are exposed with a predetermined power and exposure time to convert the low-k film in the selected locations to pillars having higher hardness and strength than the surrounding portions of the low-k film.

Abstract: The present invention relates to methods and compositions for stabilizing a change in corneal curvature, stabilizing refractive error improvements and stabilizing (maintaining) unaided visual acuity improvements after corneal reshaping procedures. This stabilization process is accomplished by administering compositions containing at least one stabilizing ophthalmic agent to the cornea of the eye after a corneal reshaping procedure.

Abstract: Embodiments of the invention include a method for forming copper interconnect structure. The method involves providing a substrate having a copper conductive layer formed thereon. An insulating layer having openings is formed on the conductive layer so that the openings expose portions of the underlying conductive layer at the bottom of the openings. A barrier layer is formed on the surface of the substrate. A portion of the barrier layer is removed at the bottom of the opening to expose the underlying conductive layer. A copper plug is formed in the opening such that the bottom of the plug is in contact with the exposed conductive layer. The substrate can be subjected to further processing if desired. The invention also includes a copper interconnect structure having increased resistance to electromigration.

Abstract: A method for forming a semiconductor device to produce graded doping in the source region and the drain region includes the steps of implanting the gate material, usually a polysilicon, with a dopant ion that varies the level of oxide formation on the gate. The dopant ion is driven into undoped polysilicon. Nitrogen ions, may also be implanted in the polysilicon to contain the previously implanted ions. For N-type transistors, typically arsenic is implanted. For P-type transistors, typically boron is implanted. Gates are formed. The gate structure is then oxidized. The oxidation process is controlled to grow a desired thickness of silicon dioxide on the gate. The portion of the gate carrying the dopant grows silicon dioxide either more quickly or more slowly. An isotropic etch can then used to remove a portion of the silicon oxide and form a knob on each sidewall of the gate.

Abstract: A method and apparatus for correcting refractive errors of the eye are disclosed. Accelerated reshaping of the corneal tissue is accomplished by administering one or more enzymes and/or other agents to the eye which temporarily soften the cornea. The cornea is thereafter fitted with a rigid contact lens or a series of lenses which have a concave curvature that will correct a refractive error. The softened cornea then rapidly reshapes its convex curvature to the concave curvature of the contact lens or series of lenses, thereby rendering the eye emmetropic. The enzymes and/or other agents then dissipate from the cornea, and the cornea "hardens" to retain the new emmetropic shape. After "hardening" has occurred, the lens rendering the eye emmetropic is removed.

Abstract: A method of making a semiconductor device includes forming a low permittivity dielectric layer over one or more conductive lines of a semiconductor device. The dielectric layer is made using a silicon-containing material having a relatively low permittivity including, for example, silicon oxyfluoride (SiO.sub.y F.sub.x) and hydrogen silsesquioxane (HSQ). An optional oxide layer may be formed over the dielectric layer. At least a portion of the dielectric layer and/or the optional oxide layer is subsequently removed to form a planar dielectric layer having a contaminated surface layer. The contaminated surface layer is due to exposure to water and is removed by, for example, exposing the surface to an acid, such as hydrofluoric acid.

Abstract: A method and apparatus for correcting refractive errors of the eye are disclosed. Accelerated reshaping of the corneal tissue is accomplished by administering one or more enzymes and/or other agents to the eye which temporarily soften the cornea. The cornea is thereafter fitted with a rigid contact lens or a series of lenses which have a concave curvature that will correct a refractive error. The softened cornea then rapidly reshapes its convex curvature to the concave curvature of the contact lens or series of lenses, thereby rendering the eye emmetropic. The enzymes and/or other agents then dissipate from the cornea, and the cornea "hardens" to retain the new emmetropic shape. After "hardening" has occurred, the lens rendering the eye emmetropic is removed.