Patents by Inventor Charles Messmer

Charles Messmer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Stress free dielectric isolation technology
    Patent number: 4606936
    Abstract: Stress is eliminated between a dielectrically passivated silicon wafer and a thick polycrystalline silicon layer by depositing a low melting transition layer such as a doped silica glass over the passivated silicon wafer.
    Type: Grant
    Filed: April 12, 1985
    Date of Patent: August 19, 1986
    Assignee: Harris Corporation
    Inventors: George Bajor, Charles Messmer
  • Electrochemical dielectric isolation technique
    Patent number: 4554059
    Abstract: Plane indicating moats are formed extending through an epitaxial layer into a substrate simultaneous with the formation of the isolation moats which terminate within the epitaxial layer. The substrate is ground to a predetermined thickness after formation of the dielectric isolation and support structure. The composite structure is inserted in an etchant with conditions set to electrochemically etch only the substrate. The exposed plane indicating moats are used as a reference for a final polishing step.
    Type: Grant
    Filed: December 4, 1984
    Date of Patent: November 19, 1985
    Assignee: Harris Corporation
    Inventors: John P. Short, Craig J. McLachlan, Charles Messmer, Paul S. Reinecke