Abstract: A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

Abstract: Disclosed are methods for dispensing underfill material in an IC assembly having a die mounted on a substrate with a gap therebetween. One or more aperture is provided in the substrate for receiving underfill material into the gap. Underfill material is dispensed into the gap through the one or more apertures, thereby filling the gap with underfill material and providing a favorable flow rate and improved underfilling. Embodiments of the invention are disclosed in which capillary action, a vacuum, or positive pressure, are used to assist in the flow of the underfill material.

Abstract: A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

Abstract: A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

Abstract: A semiconductor assembly comprising an integrated circuit chip with a first plurality of metallic contact pads exposed, having a pitch center-to-center of less than 180 ?m. A metallic bump of reflowable metal is attached to each of these contact pads. The assembly further has an electrically insulating substrate with a second plurality of metallic terminal pads in locations matching the locations of the contact pads. Each of the bumps also attached to these matching terminal pads, respectively, whereby the chip is interconnected with the substrate spaced apart by a gap. An adherent polymeric encapsulant fills the gap so that the encapsulant is free of voids. It is a pivotal feature in the method that vibration energy, up to ultrasonic frequencies, is used while the encapsulant is still in a low-viscosity precursor state in order to ensure the void-free spreading of the precursor throughout the gap between chip and substrate.

Abstract: A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

Abstract: A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

Abstract: A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

Abstract: System and method for a polymer encapsulated solder lid attach. A preferred embodiment comprises one or more metallic islands distributed throughout the combination attach, wherein each metallic island overlays one or more heat producing portions of the integrated circuit die, and a polymer encapsulant to encircle each metallic island and to bind the one or more metallic islands in place. The one or more metallic islands, with their high thermal conductivity, can effectively dissipate large amounts of heat, while the polymer encapsulant binds the one or more metallic islands in place, preventing (or reducing) movement occurring during thermal cycles that can lead to delamination and separation.

Abstract: Disclosed are integrated circuit assemblies with increased stand-off height and methods and systems for their manufacture. Methods of the invention provide for assembling a semiconductor device by aligning a die with a substrate and interposing solder between corresponding substrate and die bond pads. A lifting force is applied to the die during heating of the solder to a liquescent state, thereby increasing the stand-off height of the die above the substrate. The lifting force is maintained during cooling of the solder to a solid state, thereby forming increased stand-off height solder connections.

Abstract: Disclosed are methods for dispensing underfill material in an IC assembly having a die mounted on a substrate with a gap therebetween. One or more aperture is provided in the substrate for receiving underfill material into the gap. Underfill material is dispensed into the gap through the one or more apertures, thereby filling the gap with underfill material and providing a favorable flow rate and improved underfilling. Embodiments of the invention are disclosed in which capillary action, a vacuum, or positive pressure, are used to assist in the flow of the underfill material.

Abstract: In accordance with the present invention, a system and method to increase die stand-off height in a flip chip are provided. The system includes a plurality of separator pedestals disposed between a first face of a die and a second face of a substrate, the substrate positioned generally parallel with, and spaced apart from, the die, and the first face being opposite the second face. The plurality of separator pedestals are operable to selectively force the die and substrate apart, increasing the stand-off height of the flip chip assembly.

Abstract: A patterned plasma treatment may be provided on the chip and/or the substrate to enhance the distribution of underfill material between the chip and the substrate. The underfill material is typically dispensed after the chip is electrically connected to the substrate. The chip may be electrically connected to the substrate by an array of solder bumps, as one example. The underfill material is draw into a gap between the chip and the substrate by a capillary action. The patterned plasma-treated area formed on the chip and/or on the substrate may cause greater capillary force on the underfill material, as compared to non-plasma-treated areas. Such patterned plasma-treatment area may be designed and laid out to provide for more or better control of the underfill distribution between the chip and substrate while forming a chip package.

Abstract: A system (100) for manufacturing product, in which a first work station (101) is operable to perform a first manufacturing action on the product parts; this first station has a first entrance (101a) and a first exit 101b). A second work station (102) is operable to perform a second manufacturing action on the product parts; this second station has a second entrance (102a) and a second exit (102b). A transport line (103) between the first exit and the second entrance is operable to move the product parts under computer control. A chamber (104) encloses a portion of the line and is constructed so that the transport achieves a balanced throughput from the first station to the second station, while the product parts are exposed to computer-controlled environmental conditions (110) during transport through the chamber. The balanced throughput in the chamber is achieved by waiting lines for the product with computer-controlled monitors (105a) for product parts' positions and times in the chamber.

Abstract: A semiconductor assembly comprising an integrated circuit chip with a first plurality of metallic contact pads exposed, having a pitch center-to-center of less than 180 ?m. A metallic bump of reflowable metal is attached to each of these contact pads. The assembly further has an electrically insulating substrate with a second plurality of metallic terminal pads in locations matching the locations of the contact pads. Each of the bumps also attached to these matching terminal pads, respectively, whereby the chip is interconnected with the substrate spaced apart by a gap. An adherent polymeric encapsulant fills the gap so that the encapsulant is free of voids. It is a pivotal feature in the method that vibration energy, up to ultrasonic frequencies, is used while the encapsulant is still in a low-viscosity precursor state in order to ensure the void-free spreading of the precursor throughout the gap between chip and substrate.

Abstract: A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

Abstract: A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method comprises the steps of positioning a wafer having a plurality of integrated circuits, including the coupling members, in a vacuum chamber of a plasma apparatus so that the polymer-coated surface faces the plasma source. Next, a plasma is initiated; the ion mean free path is controlled so that the ions reach the wafer surface with predetermined energy. The wafer surface is then exposed to the plasma for a length of time sufficient to roughen the polymer surface, clean the polymer surface from organic contamination and improve the surface affinity to adhesion. The adhesion ability of this surface to organic underfill material is thus enhanced.

Abstract: A semiconductor chip package includes an integrated circuit chip and a substrate. A chip contact pad is formed on a first side of the chip. A stud is formed on the chip contact pad from wire using a wire bonding machine. The stud has a partially squashed ball portion bonded to the chip contact pad. The stud also has an elongated portion extending from the partially squashed ball portion. A first layer of insulating material is on a first side of the substrate. A bottomed well is formed in the first layer and opens to the first side of the substrate. A first conductive material at least partially fills the well. The first conductive material is electrically connected to at least one trace line in the substrate. The stud is partially embedded in the first conductive material to form an electrical connection between the chip and the substrate.

Abstract: A patterned plasma treatment may be provided on the chip and/or the substrate to enhance the distribution of underfill material between the chip and the substrate. The underfill material is typically dispensed after the chip is electrically connected to the substrate. The chip may be electrically connected to the substrate by an array of solder bumps, as one example. The underfill material is draw into a gap between the chip and the substrate by a capillary action. The patterned plasma-treated area formed on the chip and/or on the substrate may cause greater capillary force on the underfill material, as compared to non-plasma-treated areas. Such patterned plasma-treatment area may be designed and laid out to provide for more or better control of the underfill distribution between the chip and substrate while forming a chip package.

Abstract: A system (100) for manufacturing product, in which a first work station (101) is operable to perform a first manufacturing action on the product parts; this first station has a first entrance (101a) and a first exit 101b). A second work station (102) is operable to perform a second manufacturing action on the product parts; this second station has a second entrance (102a) and a second exit (102b). A transport line (103) between the first exit and the second entrance is operable to move the product parts under computer control. A chamber (104) encloses a portion of the line and is constructed so that the transport achieves a balanced throughput from the first station to the second station, while the product parts are exposed to computer-controlled environmental conditions (110) during transport through the chamber. The balanced throughput in the chamber is achieved by waiting lines for the product with computer-controlled monitors (105a) for product parts' positions and times in the chamber.