Abstract: A mask structure and photolithographic method using the same for obtaining shorter and thinner line or feature lengths for optimizing power consumption and performance in semiconductor devices. According to a first aspect, a method for enabling trimming of semiconductor linewidth dimensions implements an extra dose trim mask. The lithographic method using the extra dose trim mask to make small adjustments to patterned linewidth exposures for enhanced CD control may be used to trim or adjust whole or a plurality of regions of a lithographic exposure. There is additionally provided a structure and method of creating a lithographic dual exposure mask having one or more regions comprising one or more partial energy absorptive layers such that, when subject to a blanket dose, enable smaller image size adjustments in those regions.