Abstract: A process for shutting down a hydroprocessing reactor and for removing catalyst from the reactor, wherein the reactor includes a quench gas distribution system. The process comprises shutting off hydrocarbon feed to the reactor, stripping hydrocarbons from the catalyst, and cooling the reactor to a first threshold reactor temperature in the range of from 375-425° F. (190-218° C.). At least a portion of circulating gaseous medium flowing to the reactor is then routed through a temporary heat exchanger and cooling the gas to not less than 40° F. (4° C.). Once cooled, mixing the cooled gas with the circulating gaseous medium flowing to the reactor. Continuing steps routing and cooling until a second threshold temperature is reached wherein the reactor temperature is in a range between 120° F. and 250° F. (49° C.-121° C.). The reactor can then be purged with N2 gas, followed by introducing water into the reactor via the quench gas distribution system. The catalyst can then be safely removed from the reactor.

Abstract: A process for shutting down a hydroprocessing reactor and for removing catalyst from the reactor, wherein the reactor includes a quench gas distribution system. The process comprises shutting off hydrocarbon feed to the reactor, stripping hydrocarbons from the catalyst, and cooling the reactor to a first threshold reactor temperature in the range of from 375-425° F. (190-218° C.). At least a portion of circulating gaseous medium flowing to the reactor is then routed through a temporary heat exchanger and cooling the gas to not less than 40° F. (4° C.). Once cooled, mixing the cooled gas with the circulating gaseous medium flowing to the reactor. Continuing steps routing and cooling until a second threshold temperature is reached wherein the reactor temperature is in a range between 120° F. and 250° F. (49° C.-121° C.). The reactor can then be purged with N2 gas, followed by introducing water into the reactor via the quench gas distribution system. The catalyst can then be safely removed from the reactor.

Abstract: A method for sealing an exposed surface of a wire bond pad with a material that is capable of preventing a possible chemical attack during electroless deposition of Ni/Au pad metallurgy is provided. Specifically, the present invention provides a method whereby a TiN/Ti or TiN/Al cap is used as a protective coating covering exposed surfaces of a wire bond pad. The TiN/Ti or TiN/Al cap is not affected by alkaline chemistries used in forming the Ni/Au metallization, yet it provides a sufficient electrical pathway connecting the bond pads to the Ni/Au pad metallization.

Abstract: A seed for enhancing the extended delivery of nitrogen needed for plant development and growth, the seed having a slow release nitrogen coating of a particulate UF polymer adhered to the seed with an adhesive binder.

Abstract: An on-chip redundant crack termination barrier structure, or crackstop, provides a barrier for preventing defects, cracks, delaminations, and moisture/oxidation contaminants from reaching active circuit regions. Conductive materials in the barrier structure design permits wiring the barriers out to contact pads and device pins for coupling a monitor device to the chip for monitoring barrier integrity.

Abstract: An echo canceller, which includes, receives and sends paths connected to standard telecommunication interfaces, a non adaptive filter with filter reflection coefficients which generate an estimated echo signal, which when subtracted from the send path input produces a nearly echo free send path output, an adaptive filter generating a second estimated echo signal, which when subtracted from the send signal, provides a possible alternative nearly echo free send path signal, a fast non iterative least squares method of estimating a reflection, a controller means which, in response to an observed non echo free send path output, causes the fast non iterative least squares method to search for possible new reflections, and a controller means for expurgating unnecessary reflection coefficients in the non adaptive filter.

Abstract: A method for treating a seedling by dipping the roots of the seedling into a composition containing a slow release, particulate urea-formaldehyde polymer, which is useful as a fertilizer for enhancing the extended delivery of nitrogen needed for plant development and growth and to the composition useful as the root dip, or as a soil drench.

Abstract: Long distance telephone connections must commonly employ echo cancellers to eliminate irritating echo. The normal practice is to additionally employ non-linear processors (NLPs) as an integral component of an echo canceller in order to eliminate small residual echo which remains after initial echo cancellation. While such devices do indeed remove remaining residual echo, they also may introduce additional problems, such as suppression of the background signal. However, in some cases there is no need to deploy a potentially problematic non-linear processor. If the overall route delay of the telephone connection is not excessive, the participants do not notice the residual echo. Therefore, a determination is made of the end to end delay of the overall telephone connection. If the determined delay is not excessive, non-linear processing is not applied or is applied less aggressively. This results in a clearer telephone call, free from non-linear processor problems.

Abstract: A mesh-like reinforcing structure to inhibit delamination and cracking is fabricated in a multilayer semiconductor device using low-k dielectric materials and copper-based metallurgy. The mesh-like interconnection structure comprises conductive pads interconnected by conductive lines at each wiring level with each pad conductively connected to its adjacent pad at the next wiring level by a plurality of conductive vias. The conductive pads, lines and vias are fabricated during the normal BEOL wiring level integration process. The reinforcing structure provides both vertical and horizontal reinforcement and may be fabricated on the periphery of the active device region or within open regions of the device that are susceptible to delamination and cracking.

Abstract: An on-chip redundant crack termination barrier structure, or crackstop, provides a barrier for preventing defects, cracks, delaminations, and moisture/oxidation contaminants from reaching active circuit regions. Conductive materials in the barrier structure design permits wiring the barriers out to contact pads and device pins for coupling a monitor device to the chip for monitoring barrier integrity.

Abstract: Long distance telephone connections must commonly employ echo cancellers to eliminate irritating echo. The normal practice is to additionally employ non-linear processors (NLPs) as an integral component of an echo canceller in order to eliminate small residual echo which remains after initial echo cancellation. While such devices do indeed remove remaining residual echo, they also may introduce additional problems, such as suppression of the background signal. However, in some cases there is no need to deploy a potentially problematic non-linear processor. If the overall route delay of the telephone connection is not excessive, the participants do not notice the residual echo. Therefore, a determination is made of the end to end delay of the overall telephone connection. If the determined delay is not excessive, non-linear processing is not applied or is applied less aggressively. This results in a clearer telephone call, free from non-linear processor problems.

Abstract: An echo canceller, which includes, receive and send paths connected to standard telecommunication interfaces, a non adaptive filter with filter reflection coefficients which generate an estimated echo signal, which when subtracted from the send path input, produces a nearly echo free send path output, an adaptive filter generating a second estimated echo signal, which when subtracted from the send signal, provides a possible alternative nearly echo free send path signal, a fast non adaptive least squares method of estimating a reflection, a controller means which, in response to an observed non echo free send path output, causes the fast non adaptive least squares method to search for possible new reflections, and a controller means for expurgating unnecessary reflection coefficients in the non adaptive filter.

Abstract: A mesh-like reinforcing structure to inhibit delamination and cracking is fabricated in a multilayer semiconductor device using low-k dielectric materials and copper-based metallurgy. The mesh-like interconnection structure comprises conductive pads interconnected by conductive lines at each wiring level with each pad conductively connected to its adjacent pad at the next wiring level by a plurality of conductive vias. The conductive pads, lines and vias are fabricated during the normal BEOL wiring level integration process. The reinforcing structure provides both vertical and horizontal reinforcement and may be fabricated on the periphery of the active device region or within open regions of the device that are susceptible to delamination and cracking.

Abstract: A mesh-like reinforcing structure to inhibit delamination and cracking is fabricated in a multilayer semiconductor device using low-k dielectric materials and copper-based metallurgy. The mesh-like interconnection structure comprises conductive pads interconnected by conductive lines at each wiring level with each pad conductively connected to its adjacent pad at the next wiring level by a plurality of conductive vias. The conductive pads, lines and vias are fabricated during the normal BEOL wiring level integration process. The reinforcing structure provides both vertical and horizontal reinforcement and may be fabricated on the periphery of the active device region or within open regions of the device that are susceptible to delamination and cracking.

Abstract: Managing messages by storing messages in queues and providing a macro queue that is associated with the queues. An application programming interface is initiates a request to the macro queue to obtain a message stored in one of the queues without identifying a particular queue. The macro queue selects a queue from among the queues, and then selects a message from the selected queue. The macro queue may select a message from a queue based on queue priority or queue service time quality. A remote queue proxy is used to establish a communication link between a remote application programming interface and the macro queue. The queues and the macro queue are implemented using object oriented programming principles.

Abstract: A mesh-like reinforcing structure to inhibit delamination and cracking is fabricated in a multilayer semiconductor device using low-k dielectric materials and copper-based metallurgy. The mesh-like interconnection structure comprises conductive pads interconnected by conductive lines at each wiring level with each pad conductively connected to its adjacent pad at the next wiring level by a plurality of conductive vias. The conductive pads, lines and vias are fabricated during the normal BEOL wiring level integration process. The reinforcing structure provides both vertical and horizontal reinforcement and may be fabricated on the periphery of the active device region or within open regions of the device that are susceptible to delamination and cracking.

Abstract: An integrated circuit, comprising: a semiconductor substrate, a plurality of last metal conductors disposed above said substrate, a bottom metallic layer disposed on said last metal conductors, a top metallic layer, and an alpha absorber disposed between said bottom and top metallic layers, said alpha absorber consisting essentially of a high-purity metal which is an alpha-particle absorber. The metal is, for example, of Ta, W, Re, Os or Ir.

Abstract: A multi-level, coplanar copper damascene interconnect structure on an integrated circuit chip includes a first planar interconnect layer on an integrated circuit substrate and having plural line conductors separated by a dielectric material having a relatively low dielectric constant and a relatively low elastic modulus. A second planar interconnect layer on the first planar interconnect layer comprises a dielectric film having an elastic modulus higher than in the first planar interconnect layer and conductive vias therethrough. The vias are selectively in contact with the line conductors. A third planar interconnect layer on the second planar interconnect layer has plural line conductors separated by the dielectric material and selectively in contact with the vias.

Abstract: An integrated circuit, comprising: a semiconductor substrate, a plurality of last metal conductors disposed above said substrate, a bottom metallic layer disposed on said last metal conductors, a top metallic layer, and an alpha absorber disposed between said bottom and top metallic layers, said alpha absorber consisting essentially of a high-purity metal which is an alpha-particle absorber. The metal is, for example, of Ta, W, Re, Os or Ir.

Abstract: A communications system and method for automatically making telephone routing decisions with "global authority" based upon information gathered in real time from the entire communications system and global optimization criteria. The present invention permits unified central control and management for the entire system.