Abstract: A novel mask for photolithography in semiconductor processing and fabrication method is disclosed. The mask includes a layer of transmissive material transparent to the wavelength of light to be used deposited thereon. The transmissive material is plasma etched in accordance with a pattern in photoresist deposited thereon to create trench portions in the transmissive material. A layer of absorbing material absorptive to the wavelength of light to be used is deposited within the trench portions. The surface of the mask is then planarized to create a substantially smooth mask layer having trench portions in the transmissive material and absorbing layer portions within the trench portions. If desired, a second layer of transmissive material can be deposited over the smooth mask layer to provide a protective cap to create an overall smooth, flat completed mask surface. The mask is useful for transmissive photolithography applications as well as reflective photolithography applications.

Abstract: This invention comprehends a machine for producing camouflage nets. Different camouflage garnish patterns are secured to a net in a preselected and predetermined manner on a repetitive basis. Also, comprehended is a method of making a camouflage net by providing different shape camouflage garnish pieces that are applied to a net at predesignated work stations.

Abstract: This invention comprehends a machine for producing a composite laminate structure wherein one layer is a base material, such as a non-woven fabric, a second layer, interspersed with the first layer, is substantially a two dimensionally randomly oriented fiber layer. The fibers are bonded to the first layer by resin which is applied from underneath the first layer so as not to disturb the orientation of the fibers. Also comprehended is a method of making such a composite laminate structure.