Patents by Inventor Charles R. Spinner

Charles R. Spinner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming polycrystalline silicon contacts
    Patent number: 5059554
    Abstract: A method for fabricating integrated circuits is used to improve contacts between polycrystalline interconnect and underlying polycrystalline or monocrystalline silicon regions. After contact openings are formed, a layer of titanium is deposited over the integrated circuit. The titanium is reacted in nitrogen to form a silicide layer only in the openings. Titanium nitride and unreacted titanium are then removed, and a layer of polycrystalline silicon deposited and patterned. The silicide layer between the polycrystalline interconnect and the underlying silicon ensures that a high quality contact is formed.
    Type: Grant
    Filed: June 23, 1989
    Date of Patent: October 22, 1991
    Assignee: SGS-Thomson Microelectronics, Inc.
    Inventors: Charles R. Spinner, Fusen F. Chen, Fu-Tai Liou