Abstract: A data processing system for executing multimedia applications which interface with multimedia devices that consume or produce at least one of real-time and asynchronous streamed data includes a CPU for execution of one or more multimedia applications and a DSP for processing data including streamed data. A plurality of modular multimedia software tasks may be called by the multimedia application for execution in the DSP. A plurality of data communication modules are provided for linking selected ones of the software tasks with selected others of the software tasks, and linking selected multimedia devices with selected ones of the software tasks. Each of the communications modules allows continuous, real-time and unidirectional communication of streamed data.

Abstract: A nonvolatile memory cell is disclosed that has a buried n+ layer from which charge (electrons) is injected into the insulator of n-channel MNOS (Metal Nitride Oxide Semiconductor) type devices.

Abstract: A nonvolatile Charge Injection Device (NOVCID) of Metal-Nitride-Oxide-Semiconductor (MNOS) material is operated in a novel manner in combination with a flip-flop to provide a charge pumped volatile memory storage system that can be continuously nondestructively read and on command, by applying a high positive potential to the field plate of the NOVCID, the information stored in the volatile mode is transferred to the nonvolatile state. To recover the stored information an alternating current signal is applied to the field plate.

Abstract: A high density, static, virtually nonvolatile, Random Access Memory (RAM) cell is disclosed in which variable threshold n-channel depletion mode Metal-Nitride-Oxide-Semiconductor (MNOS) transistors are the load devices for a pair of active, n-channel, enhancement mode, Insulated Gate Field Effect Transistors (IGFETs) in a flip-flop circuit. N-channel enhancement mode access transistors also IGFETs connect the cell to the bit line and the bit line. Information is written in, and read, in volatile form conventionally. A +25 volt, 10 msec pulse applied to the gates of the depletion mode MNOS load devices transfers the data from the volatile mode to the nonvolatile mode.

Abstract: A dynamic, virtually nonvolatile random access memory (RAM) storage cell is provided by storing information in a Nonvolatile Charge Injection Device (NOVCID), first in volatile form, then by an electric signal transferring the stored intelligence into a nonvolatile form from which it may late be recovered. Since only on external command is the information transferred into the nonvolatile storage mode, the memory is described as a virtually nonvolatile RAM.