Patents by Inventor Charles Sharbono
Charles Sharbono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20250051951Abstract: A method of plating substrates may include placing a substrate in a plating chamber comprising a liquid, and applying a current to the liquid in the plating chamber to deposit a metal on exposed portions of the substrate, where the current may include alternating cycles of a forward plating current and a reverse deplating current. To determine the current characteristics, a model of a substrate may be simulated during the plating process to generate data points that relate characteristics of the plating process and a pattern on the substrate to a range nonuniformity of material formed on the substrate during the plating process. Using information from the data points, values for the forward and reverse currents may be derived and provided to the plating chamber to execute the plating process.Type: ApplicationFiled: October 28, 2024Publication date: February 13, 2025Applicant: Applied Materials, Inc.Inventors: Paul R. McHugh, Charles Sharbono, Jing Xu, John L. Klocke, Sam K. Lee, Keith Edward Ypma
-
Patent number: 12146235Abstract: A method of plating substrates may include placing a substrate in a plating chamber comprising a liquid, and applying a current to the liquid in the plating chamber to deposit a metal on exposed portions of the substrate, where the current may include alternating cycles of a forward plating current and a reverse deplating current. To determine the current characteristics, a model of a substrate may be simulated during the plating process to generate data points that relate characteristics of the plating process and a pattern on the substrate to a range nonuniformity of material formed on the substrate during the plating process. Using information from the data points, values for the forward and reverse currents may be derived and provided to the plating chamber to execute the plating process.Type: GrantFiled: March 3, 2022Date of Patent: November 19, 2024Assignee: Applied Materials, Inc.Inventors: Paul R. McHugh, Charles Sharbono, Jing Xu, John L. Klocke, Sam K. Lee, Keith Edward Ypma
-
Publication number: 20230279576Abstract: A method of plating substrates may include placing a substrate in a plating chamber comprising a liquid, and applying a current to the liquid in the plating chamber to deposit a metal on exposed portions of the substrate, where the current may include alternating cycles of a forward plating current and a reverse deplating current. To determine the current characteristics, a model of a substrate may be simulated during the plating process to generate data points that relate characteristics of the plating process and a pattern on the substrate to a range nonuniformity of material formed on the substrate during the plating process. Using information from the data points, values for the forward and reverse currents may be derived and provided to the plating chamber to execute the plating process.Type: ApplicationFiled: March 3, 2022Publication date: September 7, 2023Applicant: Applied Materials, Inc.Inventors: Paul R. McHugh, Charles Sharbono, Jing Xu, John L. Klocke, Sam K. Lee, Keith Edward Ypma
-
Publication number: 20230272546Abstract: Electroplating methods and systems are described that include adding a metal-ion-containing starting solution to a catholyte to increase a metal ion concentration in the catholyte to a first metal ion concentration. The methods and systems further include measuring the metal ion concentration in the catholyte while the metal ions electroplate onto a substrate and the catholyte reaches a second metal ion concentration that is less than the first metal ion concentration. The methods and systems additionally include adding a portion of an anolyte directly to the catholyte when the catholyte reaches the second metal ion concentration. The addition of the portion of the anolyte increases the metal ion concentration in the catholyte to a third metal ion concentration that is greater than or about the first metal ion concentration.Type: ApplicationFiled: May 9, 2023Publication date: August 31, 2023Applicant: Applied Materials, Inc.Inventors: Kwan Wook Roh, Charles Sharbono, Kyle M. Hanson
-
Patent number: 11697887Abstract: Electroplating systems may include an electroplating chamber. The systems may also include a replenish assembly fluidly coupled with the electroplating chamber. The replenish assembly may include a first compartment housing anode material. The first compartment may include a first compartment section in which the anode material is housed and a second compartment section separated from the first compartment section by a divider. The replenish assembly may include a second compartment fluidly coupled with the electroplating chamber and electrically coupled with the first compartment. The replenish assembly may also include a third compartment electrically coupled with the second compartment, the third compartment including an inert cathode.Type: GrantFiled: October 23, 2020Date of Patent: July 11, 2023Assignee: Applied Materials, Inc.Inventors: Nolan L. Zimmerman, Charles Sharbono, Gregory J. Wilson, Paul R. McHugh, Paul Van Valkenburg, Deepak Saagar Kalaikadal, Kyle M. Hanson
-
Patent number: 11686005Abstract: Electroplating methods and systems are described that include adding a metal-ion-containing starting solution to a catholyte to increase a metal ion concentration in the catholyte to a first metal ion concentration. The methods and systems further include measuring the metal ion concentration in the catholyte while the metal ions electroplate onto a substrate and the catholyte reaches a second metal ion concentration that is less than the first metal ion concentration. The methods and systems additionally include adding a portion of an anolyte directly to the catholyte when the catholyte reaches the second metal ion concentration. The addition of the portion of the anolyte increases the metal ion concentration in the catholyte to a third metal ion concentration that is greater than or about the first metal ion concentration.Type: GrantFiled: January 28, 2022Date of Patent: June 27, 2023Assignee: Applied Materials, Inc.Inventors: Kwan Wook Roh, Charles Sharbono, Kyle M. Hanson
-
Publication number: 20230092346Abstract: Exemplary electroplating systems may include a vessel. The systems may include a paddle disposed within the vessel. The paddle may be characterized by a first surface and a second surface. The first surface of the paddle may be include a plurality of ribs that extend upward from the first surface. The plurality of ribs may be arranged in a generally parallel manner about the first surface. The paddle may define a plurality of apertures through a thickness of the paddle. Each of the plurality of apertures may have a diameter of less than about 5 mm. The paddle may have an open area of less than about 15%.Type: ApplicationFiled: September 17, 2021Publication date: March 23, 2023Applicant: Applied Materials, Inc.Inventors: Charles Sharbono, Paul R. McHugh, Gregory J. Wilson, John L. Klocke, Nolan L. Zimmerman
-
Publication number: 20220127747Abstract: Electroplating systems may include an electroplating chamber. The systems may also include a replenish assembly fluidly coupled with the electroplating chamber. The replenish assembly may include a first compartment housing anode material. The first compartment may include a first compartment section in which the anode material is housed and a second compartment section separated from the first compartment section by a divider. The replenish assembly may include a second compartment fluidly coupled with the electroplating chamber and electrically coupled with the first compartment. The replenish assembly may also include a third compartment electrically coupled with the second compartment, the third compartment including an inert cathode.Type: ApplicationFiled: October 23, 2020Publication date: April 28, 2022Applicant: Applied Materials, Inc.Inventors: Nolan L. Zimmerman, Charles Sharbono, Gregory J. Wilson, Paul R. McHugh, Paul Van Valkenburg, Deepak Saagar Kalaikadal, Kyle M. Hanson
-
Patent number: 10840104Abstract: Methods of etching a semiconductor substrate may include applying an etchant to the semiconductor substrate. The semiconductor substrate may include an exposed region of an oxygen-containing material and an exposed region of a nitrogen-containing material. The methods may include heating the semiconductor substrate from a first temperature to a second temperature. The methods may include maintaining the semiconductor substrate at the second temperature for a period of time sufficient to perform an etch of the nitrogen-containing material relative to the oxygen-containing material. The methods may also include quenching the etch subsequent the period of time.Type: GrantFiled: July 16, 2018Date of Patent: November 17, 2020Assignee: Applied Materials, Inc.Inventors: Eric J. Bergman, John L. Klocke, Charles Sharbono, Kyle Moran Hanson, Paul McHugh
-
Publication number: 20190019688Abstract: Methods of etching a semiconductor substrate may include applying an etchant to the semiconductor substrate. The semiconductor substrate may include an exposed region of an oxygen-containing material and an exposed region of a nitrogen-containing material. The methods may include heating the semiconductor substrate from a first temperature to a second temperature. The methods may include maintaining the semiconductor substrate at the second temperature for a period of time sufficient to perform an etch of the nitrogen-containing material relative to the oxygen-containing material. The methods may also include quenching the etch subsequent the period of time.Type: ApplicationFiled: July 16, 2018Publication date: January 17, 2019Applicant: Applied Materials, Inc.Inventors: Eric J. Bergman, John L. Klocke, Charles Sharbono, Kyle Moran Hanson, Paul McHugh
-
Patent number: 9922874Abstract: A method of processing a semiconductor substrate includes: immersing a substrate in a first bath, wherein the substrate comprises a barrier layer, a conductive seed layer, and a patterned photoresist layer defining an opening; providing a first electric current between the conductive seed layer and a first anode disposed in electrical contact with the first bath to deposit a conductive material within the opening; stripping the patterned photoresist layer; immersing the substrate in a second bath; providing a second electric current that is a reverse of the first electric current between the conductive seed layer plus the conductive material and a second anode disposed in electrical contact with the second bath; etching the conductive seed layer from atop a field region of the barrier layer; and etching the barrier layer from atop a field region of the substrate.Type: GrantFiled: July 1, 2016Date of Patent: March 20, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Prayudi Lianto, Sam Lee, Charles Sharbono, Marvin Louis Bernt, Guan Huei See, Arvind Sundarrajan
-
Publication number: 20180005881Abstract: A method of processing a semiconductor substrate includes: immersing a substrate in a first bath, wherein the substrate comprises a barrier layer, a conductive seed layer, and a patterned photoresist layer defining an opening; providing a first electric current between the conductive seed layer and a first anode disposed in electrical contact with the first bath to deposit a conductive material within the opening; stripping the patterned photoresist layer; immersing the substrate in a second bath; providing a second electric current that is a reverse of the first electric current between the conductive seed layer plus the conductive material and a second anode disposed in electrical contact with the second bath; etching the conductive seed layer from atop a field region of the barrier layer; and etching the barrier layer from atop a field region of the substrate.Type: ApplicationFiled: July 1, 2016Publication date: January 4, 2018Inventors: Prayudi LIANTO, Sam LEE, Charles SHARBONO, Marvin Louis BERNT, Guan Huei SEE, Arvind SUNDARRAJAN
-
Patent number: 9758893Abstract: A non-uniform initial metal film is non-uniformly deplated to provide a more uniform metal film on a substrate. Electrochemical deplating may be performed by placing the substrate in a deplating bath formulated specifically for deplating, rather than for plating. The deplating bath may have a throwing power of 0.3 or less; or a bath conductivity of 1 mS/cm to 250 mS/cm. Reverse electrical current conducted through the deplating bath non-uniformly. electro-etches or deplates the metal film.Type: GrantFiled: March 21, 2014Date of Patent: September 12, 2017Assignee: Applied Materials, Inc.Inventors: Sam K. Lee, Charles Sharbono
-
Publication number: 20160333492Abstract: A method for electrochemically processing a microfeature workpiece includes contacting the first surface of the microfeature workpiece with a plating electrolyte in a plating chamber, wherein the plating electrolyte includes at least one metal ion, flowing the plating electrolyte from a first plating electrolyte inlet at the first end of the workpiece to a second plating electrolyte outlet at the second end of the workpiece across the center point of the workpiece, and electrochemically depositing the at least one metal ion onto the first surface of the workpiece. Another method for electrochemically processing a microfeature workpiece includes contacting a first surface of the microfeature workpiece with a plating electrolyte having at least one metal ion, heating the second surface of the workpiece using a heating method, and electrochemically depositing the at least one metal ion onto the first surface of the workpiece.Type: ApplicationFiled: May 13, 2015Publication date: November 17, 2016Inventors: Eric J. Bergman, Charles Sharbono, Sam K. Lee
-
Publication number: 20150225866Abstract: A non-uniform initial metal film is non-unniformly deplated to provide a more uniform metal film on a substrate. Electrochemical deplating may be performed by placing the substrate in a deplating bath formulated specifically for deplating, rather than for plating. The deplating bath may have a throwing power of 0.3 or less; or a bath conductivity of 1 mS/cm to 250 mS/cm. Reverse electrical current conducted through the deplating bath non-uniformly. electro-etches or deplates the metal film.Type: ApplicationFiled: March 21, 2014Publication date: August 13, 2015Applicant: APPLIED MATERIALS, INC.Inventors: Sam K. Lee, Charles Sharbono
-
Publication number: 20140262794Abstract: A method for electroplating a wafer detects plating bath failure based on a voltage change. The method is useful in plating wafers having TSV features. Voltage of each anode of a plating processor may be monitored. An abrupt drop in voltage signals a bath failure resulting from conversion of an accelerator such as SPS to it's by products MPS. Bath failure is delayed or avoided by current pulsing or current ramping. An improved plating bath has a catholyte with a very low acid concentration.Type: ApplicationFiled: March 15, 2013Publication date: September 18, 2014Inventors: Daniel K. Gebregziabiher, John Klocke, Charles Sharbono, Chandru Thambidurai, David J. Erickson