Patents by Inventor Charles Simon

Charles Simon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110254053
    Abstract: This field-effect superconductor transistor (2) comprises a source electrode (4) and a drain electrode (6), connected by a superconducting channel (12), the channel (12) and the source (4) and drain (6) electrodes being arranged on a substrate (16), and a gate electrode (8) covering the channel (12). A layer (14) of semiconductor material is arranged between the channel (12) and the gate electrode (8), to control over the critical current of the superconducting channel (12) between a minimum value Ic_min and a maximum value Ic_max, by controlling the surface roughness of said channel (12), said surface roughness being controlled by combining the proximity effect between the superconducting channel (12) and the layer (14) of semiconductor material with the field effect in the layer (14) of semiconductor material by polarising the gate electrode (8).
    Type: Application
    Filed: May 29, 2009
    Publication date: October 20, 2011
    Applicants: Ensicaen, Centre National De La Recherche Scientifique (C.N.R.S.)
    Inventors: Christophe Goupil, Alain Pautrat, Charles Simon, Patrice Mathieu