Abstract: A method and system are provided using an offset dial gage for alignment and adjustment of a polishing pad that has been attached to a turntable of a chemical mechanical polishing (CMP) device. In a described embodiment, an offset dial gage has a surface that contacts a side of a turntable, while a sensor tip contacts the edge of a polishing pad positioned on the turntable. This provides an assessment of radial displacement of the polishing pad edge at this measurement point relative to the side of the turntable. Based on one or more such measurements, the polishing pad may be found acceptably positioned, may be trimmed, or may be replaced. The method and system reduce or eliminate the occurrence of a defect pattern found to be related to side unloading of semiconductor wafers from a CMP turntable.

Abstract: A method of manufacturing an integrated circuit in which the method comprises exposing a wafer to an energy source defining a focal plane with which a depth of focus is associated and conforming the wafer to substantially correspond with the focal plane.

Abstract: Disclosed herein is a process for diminishing contamination of an integrated circuit wafer caused by residual slurry components disposed on a back side of a carrier for engaging an integrated circuit wafer. Also disclosed is a CMP machine configured to wash a back side of a carrier.

Abstract: Disclosed herein is an improved carrier design for use in a chemical mechanical polishing process. The carrier employs a retainer ring that is fastened to the side of carrier, as opposed to the front of the carrier, which alleviates undesired uneven wear of the retainer ring surface. Specifically exemplified herein is a carrier comprising a membrane that is secured to the carrier body by a retainer ring that is snap-fitted to the carrier body.

Abstract: A method and system are provided using an offset dial gage for alignment and adjustment of a polishing pad that has been attached to a turntable of a chemical mechanical polishing (CMP) device. In a described embodiment, an offset dial gage has a surface that contacts a side of a turntable, while a sensor tip contacts the edge of a polishing pad positioned on the turntable. This provides an assessment of radial displacement of the polishing pad edge at this measurement point relative to the side of the turntable. Based on one or more such measurements, the polishing pad may be found acceptably positioned, may be trimmed, or may be replaced. The method and system reduce or eliminate the occurrence of a defect pattern found to be related to side unloading of semiconductor wafers from a CMP turntable.

Abstract: A carrier head for supporting a wafer during a chemical mechanical polishing process is provided. In one exemplary implementation, the carrier head may comprise a wear ring, and a slidably movable pressure plate disposed within the wear ring. The pressure plate may be arranged to provide slidable movement relative to the wear ring. This degree of freedom can accommodate height dimensional changes that may occur in the wear ring.

Abstract: A conditioner assembly is disclosed for conditioning a polishing pad used in chemical mechanical polishing of planar semiconductor wafer components. One embodiment of the conditioner assembly comprises a plate-type conditioner plate comprising a circular edge, having a first side and a second side, where on the first side is provided one or more diamond-impregnated abrasive elements, each comprising an abrasive surface disposed a distance from said first side comprising diamond particles, and one or more jets oriented to discharge fluid away from said first side. In operation the jets dispense high velocity fluid that hits the surface of the adjacent polishing pad with sufficient force to dislodge diamond particles that have loosened or broken off from the diamond-impregnated abrasive elements, thereby avoiding the embedding of such particles into the polishing pad surface.

Abstract: A chemical mechanical polishing (CMP) pad is provided. The CMP pad includes a groove pattern disposed on a polishing surface of the pad. The groove pattern is formed of an alternating sequence of spaced apart grooves. The alternating sequence of grooves comprises a groove of a first size and a groove of a second size, wherein the first and second groove sizes are different relative to one another.