Patents by Inventor Charles T. Rettner
Charles T. Rettner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10915023Abstract: A crosslinked self-assembled monolayer (SAM), comprising surface groups containing a nitrogen-heterocycle, was formed on an oxygen plasma-treated silicon oxide or hafnium oxide top surface of a substrate. The SAM is covalently bound to the underlying oxide layer. The SAM was patterned by direct write methods using ultraviolet (UV) light of wavelength 193 nm or an electron beam, forming a line-space pattern comprising non-exposed SAM features. The non-exposed SAM features non-covalently bound DNA-wrapped carbon nanotubes (DNA-CNT) deposited from aqueous solution with a selective placement efficiency of about 90%. Good alignment of carbon nanotubes to the long axis of the SAM features was also observed. The resulting patterned biopolymer features were used to prepare a CNT based field effect transistor.Type: GrantFiled: November 3, 2017Date of Patent: February 9, 2021Assignee: International Business Machines CorporationInventors: Shu-Jen Han, Brian Lin, Hareem T. Maune, Charles T. Rettner, Linda K. Sundberg, Leslie E. Thompson, Hoa D. Truong
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Publication number: 20190137879Abstract: A crosslinked self-assembled monolayer (SAM), comprising surface groups containing a nitrogen-heterocycle, was formed on an oxygen plasma-treated silicon oxide or hafnium oxide top surface of a substrate. The SAM is covalently bound to the underlying oxide layer. The SAM was patterned by direct write methods using ultraviolet (UV) light of wavelength 193 nm or an electron beam, forming a line-space pattern comprising non-exposed SAM features. The non-exposed SAM features non-covalently bound DNA-wrapped carbon nanotubes (DNA-CNT) deposited from aqueous solution with a selective placement efficiency of about 90%. Good alignment of carbon nanotubes to the long axis of the SAM features was also observed. The resulting patterned biopolymer features were used to prepare a CNT based field effect transistor.Type: ApplicationFiled: November 3, 2017Publication date: May 9, 2019Inventors: Shu-Jen Han, Brian Lin, Hareem T. Maune, Charles T. Rettner, Linda K. Sundberg, Leslie E. Thompson, Hoa D. Truong, Willi Volksen
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Patent number: 9773513Abstract: A chromium oxide film is formed at room temperature. The chromium oxide film has at least one partially polycrystalline portion and/or at least one amorphous portion depending upon the substrate(s) over which the chromium oxide film is formed. Partially polycrystalline portion(s) of the chromium oxide film are exposed, at room temperature, to an electron beam that has an accelerating voltage of at least 100 kilovolts to further crystallize the partially polycrystalline portion(s). Amorphous portion(s) of the chromium oxide film are exposed, at room temperature, to an electron beam that has an accelerating voltage of more than 100 kilovolts to crystallize the amorphous portion(s).Type: GrantFiled: June 18, 2015Date of Patent: September 26, 2017Assignee: International Business Machines CorporationInventors: Robert G. Biskeborn, Calvin S. Lo, Charles T. Rettner, Philip M. Rice, Teya Topuria, Kumar R. Virwani
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Publication number: 20160372142Abstract: A chromium oxide film is formed at room temperature. The chromium oxide film has at least one partially polycrystalline portion and/or at least one amorphous portion depending upon the substrate(s) over which the chromium oxide film is formed. Partially polycrystalline portion(s) of the chromium oxide film are exposed, at room temperature, to an electron beam that has an accelerating voltage of at least 100 kilovolts to further crystallize the partially polycrystalline portion(s). Amorphous portion(s) of the chromium oxide film are exposed, at room temperature, to an electron beam that has an accelerating voltage of more than 100 kilovolts to crystallize the amorphous portion(s).Type: ApplicationFiled: June 18, 2015Publication date: December 22, 2016Inventors: Robert G. Biskeborn, Calvin S. Lo, Charles T. Rettner, Philip M. Rice, Teya Topuria, Kumar R. Virwani
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Patent number: 9298870Abstract: Methods and computer program products for designing topographic patterns for directing the formation of self-assembled domains at specified locations on substrates. The methods include generating mathematical models that operate on mathematical descriptions of the number and locations of cylindrical self-assembled domains in a mathematical description of a guiding pattern.Type: GrantFiled: May 16, 2012Date of Patent: March 29, 2016Assignee: International Business Machines CorporationInventors: Joy Cheng, Kafai Lai, Chi-Chun Liu, Jed W. Pitera, Charles T. Rettner
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Publication number: 20160085896Abstract: Methods and computer program products for designing topographic patterns for directing the formation of self-assembled domains at specified locations on substrates. The methods include generating mathematical models that operate on mathematical descriptions of the number and locations of cylindrical self-assembled domains in a mathematical description of a guiding pattern.Type: ApplicationFiled: May 16, 2012Publication date: March 24, 2016Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Joy Cheng, Kafai Lai, Chi-Chun Liu, Jed W. Pitera, Charles T. Rettner
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Patent number: 9107291Abstract: A chemical pattern layer including an orientation control material and a prepattern material is formed over a substrate. The chemical pattern layer includes alignment-conferring features and additional masking features. A self-assembling material is applied and self-aligned over the chemical pattern layer. The polymeric block components align to the alignment-conferring features, while the alignment is not altered by the additional masking features. A first polymeric block component is removed selective to a second polymeric block component by an etch to form second polymeric block component portions having a pattern. A composite pattern of the pattern of an etch-resistant material within the chemical pattern layer and the pattern of the second polymeric block component portions can be transferred into underlying material layers employing at least another etch.Type: GrantFiled: November 21, 2012Date of Patent: August 11, 2015Assignee: International Business Machines CorporationInventors: Joy Cheng, Gregory S. Doerk, Charles T. Rettner, Daniel P. Sanders
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Patent number: 8722174Abstract: A method of forming a block copolymer pattern comprises providing a substrate comprising a topographic pre-pattern comprising a ridge surface separated by a height, h, greater than 0 nanometers from a trench surface; disposing a block copolymer comprising two or more block components on the topographic pre-pattern to form a layer having a thickness of more than 0 nanometers over the ridge surface and the trench surface; and annealing the layer to form a block copolymer pattern having a periodicity of the topographic pre-pattern, the block copolymer pattern comprising microdomains of self-assembled block copolymer disposed on the ridge surface and the trench surface, wherein the microdomains disposed on the ridge surface have a different orientation compared to the microdomains disposed on the trench surface. Also disclosed are semiconductor devices.Type: GrantFiled: December 10, 2012Date of Patent: May 13, 2014Assignee: International Business Machines CorporationInventors: Ho-Cheol Kim, Sang-min Park, Charles T. Rettner
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Publication number: 20140087089Abstract: A method in one embodiment includes exposing a side of a dielectric layer to a beam of charged particles for converting an amorphous component of at least a portion of a dielectric layer to a crystalline state, wherein the side of the dielectric layer of extends between adjacent layers. Another method includes forming a dielectric overcoat on a media facing side of a plurality of thin films, the thin films having at least one transducer formed therein; and exposing at least a portion of the overcoat to a beam of charged particles for converting an amorphous component of the dielectric overcoat of the thin films to a crystalline state. Another method includes forming a thin film dielectric layer above a substrate; and exposing the dielectric layer to a beam of charged particles for converting an amorphous component of at least a portion of the dielectric layer to a crystalline state.Type: ApplicationFiled: September 21, 2012Publication date: March 27, 2014Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Robert G. Biskeborn, Calvin S. Lo, Charles T. Rettner, Philip M. Rice, Teya Topuria, Kumar R. Virwani
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Patent number: 8349203Abstract: A method of forming a block copolymer pattern comprises providing a substrate comprising a topographic pre-pattern comprising a ridge surface separated by a height, h, greater than 0 nanometers from a trench surface; disposing a block copolymer comprising two or more block components on the topographic pre-pattern to form a layer having a thickness of more than 0 nanometers over the ridge surface and the trench surface; and annealing the layer to form a block copolymer pattern having a periodicity of the topographic pre-pattern, the block copolymer pattern comprising microdomains of self-assembled block copolymer disposed on the ridge surface and the trench surface, wherein the microdomains disposed on the ridge surface have a different orientation compared to the microdomains disposed on the trench surface.Type: GrantFiled: September 4, 2009Date of Patent: January 8, 2013Assignee: International Business Machines CorporationInventors: Ho-Cheol Kim, Sang-min Park, Charles T. Rettner
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Patent number: 8226838Abstract: Disclosed are methods of forming polymer structures comprising: applying a solution of a block copolymer assembly comprising at least one block copolymer to a neutral substrate having a chemical pattern thereon, the chemical pattern comprising alternating pinning and neutral regions that are chemically distinct and have a first spatial frequency given by the number of paired sets of pinning and neutral regions along a given direction on the substrate; and forming domains of the block copolymer that form by lateral segregation of the blocks in accordance with the underlying chemical pattern, wherein at least one domain of the block copolymer assembly has an affinity for the pinning regions, wherein a structure extending across the chemical pattern is produced, the structure having a uniform second spatial frequency given by the number of repeating sets of domains along the given direction that is at least twice that of the first spatial frequency.Type: GrantFiled: April 3, 2008Date of Patent: July 24, 2012Assignee: International Business Machines CorporationInventors: Joy Cheng, William D. Hinsberg, Ho-Cheol Kim, Charles T. Rettner, Daniel P. Sanders
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Publication number: 20120135146Abstract: Methods are disclosed for forming topographical features. In one method, a pre-patterned structure is provided which comprises i) a support member having a surface and ii) an element for topographically guiding segregation of a polymer mixture including a first polymer and a second polymer, the element comprising a feature having a sidewall adjoined to the surface. The polymer mixture is disposed on the pre-patterned structure, wherein the disposed polymer mixture has contact with the sidewall and the surface. The first polymer and the second polymer are segregated in a plane parallel to the surface, thereby forming a segregated structure comprising a first polymer domain and a second polymer domain.Type: ApplicationFiled: November 30, 2010Publication date: May 31, 2012Applicants: JSR CORPORATION, INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Joy Cheng, Hayato Namai, Charles T. Rettner, Daniel P. Sanders, Ratnam Sooriyakumaran
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Patent number: 7989026Abstract: Disclosed herein is a method of controlling the orientation of microphase-separated domains in a block copolymer film, comprising forming an orientation control layer comprising an epoxy-containing cycloaliphatic acrylic polymer on a surface of a substrate, irradiating and/or heating the substrate to crosslink the orientation control layer, and forming a block copolymer assembly layer comprising block copolymers which form microphase-separated domains, on a surface of the orientation control layer opposite the substrate. The orientation control layer can be selectively cross-linked to expose regions of the substrate, or the orientation control layer can be patterned without removing the layer, to provide selective patterning on the orientation control layer. In further embodiments, bilayer and trilayer imaging schemes are disclosed.Type: GrantFiled: January 12, 2008Date of Patent: August 2, 2011Assignee: International Business Machines CorporationInventors: Joy Cheng, Ho-Cheol Kim, Charles T. Rettner, Daniel P. Sanders, Ratnam Sooriyakumaran, Linda Sundberg
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Publication number: 20110059299Abstract: A method of forming a block copolymer pattern comprises providing a substrate comprising a topographic pre-pattern comprising a ridge surface separated by a height, h, greater than 0 nanometers from a trench surface; disposing a block copolymer comprising two or more block components on the topographic pre-pattern to form a layer having a thickness of more than 0 nanometers over the ridge surface and the trench surface; and annealing the layer to form a block copolymer pattern having a periodicity of the topographic pre-pattern, the block copolymer pattern comprising microdomains of self-assembled block copolymer disposed on the ridge surface and the trench surface, wherein the microdomains disposed on the ridge surface have a different orientation compared to the microdomains disposed on the trench surface.Type: ApplicationFiled: September 4, 2009Publication date: March 10, 2011Applicant: International Business Machines CorporationInventors: Ho-Cheol Kim, Sang-min Park, Charles T. Rettner
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Patent number: 7846502Abstract: A method of controlling both alignment and registration (lateral position) of lamellae formed from self-assembly of block copolymers, the method comprising the steps of obtaining a substrate having an energetically neutral surface layer comprising a first topographic “phase pinning” pattern and a second topographic “guiding” pattern; obtaining a self-assembling di-block copolymer; coating the self-assembling di-block copolymer on the energetically neutral surface to obtain a coated substrate; and annealing the coated substrate to obtain micro-domains of the di-block copolymer.Type: GrantFiled: June 11, 2009Date of Patent: December 7, 2010Assignee: International Business Machines CorporationInventors: Ho-Cheol Kim, Charles T Rettner, Sang-Min Park
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Publication number: 20100120252Abstract: A method of controlling both alignment and registration (lateral position) of lamellae formed from self-assembly of block copolymers, the method comprising the steps of obtaining a substrate having an energetically neutral surface layer comprising a first topographic “phase pinning” pattern and a second topographic “guiding” pattern; obtaining a self-assembling di-block copolymer; coating the self-assembling di-block copolymer on the energetically neutral surface to obtain a coated substrate; and annealing the coated substrate to obtain micro-domains of the di-block copolymer.Type: ApplicationFiled: June 11, 2009Publication date: May 13, 2010Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Ho-Cheol Kim, Charles T. Rettner, Sang-Min Park
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Patent number: 7682866Abstract: A method for fabrication and a structure of a self-aligned (crosspoint) memory device comprises lines (wires) in a first direction and in a second direction. The wires in the first direction are formed using a hard mask material that is resistant to the pre-selected etch processes used for creation of the lines in both the first and the second direction. Consequently, the hard mask material for the lines in the first direction form part of the memory stack.Type: GrantFiled: January 19, 2006Date of Patent: March 23, 2010Assignee: International Business Machines CorporationInventors: Mark W. Hart, Christie R. K. Marrian, Gary M. McClelland, Charles T. Rettner, Hemantha K. Wickramasinghe
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Publication number: 20090179002Abstract: Disclosed are methods of forming polymer structures comprising: applying a solution of a block copolymer assembly comprising at least one block copolymer to a neutral substrate having a chemical pattern thereon, the chemical pattern comprising alternating pinning and neutral regions that are chemically distinct and have a first spatial frequency given by the number of paired sets of pinning and neutral regions along a given direction on the substrate; and forming domains of the block copolymer that form by lateral segregation of the blocks in accordance with the underlying chemical pattern, wherein at least one domain of the block copolymer assembly has an affinity for the pinning regions, wherein a structure extending across the chemical pattern is produced, the structure having a uniform second spatial frequency given by the number of repeating sets of domains along the given direction that is at least twice that of the first spatial frequency.Type: ApplicationFiled: April 3, 2008Publication date: July 16, 2009Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Joy Cheng, William D. Hinsberg, Ho-Cheol Kim, Charles T. Rettner, Daniel P. Sanders
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Publication number: 20090179001Abstract: Disclosed herein is a method of controlling the orientation of microphase-separated domains in a block copolymer film, comprising forming an orientation control layer comprising an epoxy-containing cycloaliphatic acrylic polymer on a surface of a substrate, irradiating and/or heating the substrate to crosslink the orientation control layer, and forming a block copolymer assembly layer comprising block copolymers which form microphase-separated domains, on a surface of the orientation control layer opposite the substrate. The orientation control layer can be selectively cross-linked to expose regions of the substrate, or the orientation control layer can be patterned without removing the layer, to provide selective patterning on the orientation control layer. In further embodiments, bilayer and trilayer imaging schemes are disclosed.Type: ApplicationFiled: January 12, 2008Publication date: July 16, 2009Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Joy Cheng, Ho-Cheol Kim, Charles T. Rettner, Daniel P. Sanders, Ratnam Sooriyakumaran, Linda Sundberg
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Patent number: 7560141Abstract: A method of controlling both alignment and registration (lateral position) of lamellae formed from self-assembly of block copolymers, the method comprising the steps of obtaining a substrate having an energetically neutral surface layer comprising a first topographic “phase pinning” pattern and a second topographic “guiding” pattern; obtaining a self-assembling di-block copolymer; coating the self-assembling di-block copolymer on the energetically neutral surface to obtain a coated substrate; and annealing the coated substrate to obtain micro-domains of the di-block copolymer.Type: GrantFiled: November 11, 2008Date of Patent: July 14, 2009Assignee: International Business Machines CorporationInventors: Ho-Cheol Kim, Charles T. Rettner, Sang-Min Park