Abstract: This disclosure describes systems, methods, and apparatus for a combined LED driver and emergency backup battery system. The LED driver can include current regulation circuitry as well as a bus enabling charging and discharging of an energy storage device from and to the bus. A master controller can control charging and discharging of the energy storage device via a controller of an energy storage management system, and also communicate with the current regulation circuitry to control a balance of power between an AC mains, the energy storage device, and driving of an LED light source. Accessories may be coupled to the bus and receive low voltage power from the bus and optionally receive commands from the master controller and provide sensed data back to the controller. A wireless network interface to the master controller can enable system states based on electrical power company indications and instructions.

Abstract: This disclosure describes systems, methods, and apparatus for a combined LED driver and emergency backup battery system. The LED driver can include current regulation circuitry as well as a bus enabling charging and discharging of an energy storage device from and to the bus. A master controller can control charging and discharging of the energy storage device via a controller of an energy storage management system, and also communicate with the current regulation circuitry to control a balance of power between an AC mains, the energy storage device, and driving of an LED light source. Accessories may be coupled to the bus and receive low voltage power from the bus and optionally receive commands from the master controller and provide sensed data back to the controller. A wireless network interface to the master controller can enable system states based on electrical power company indications and instructions.

Abstract: This disclosure describes systems, methods, and apparatus for a combined LED driver and emergency backup battery system. The LED driver can include current regulation circuitry as well as a bus enabling charging and discharging of an energy storage device from and to the bus. A master controller can control charging and discharging of the energy storage device via a controller of an energy storage management system, and also communicate with the current regulation circuitry to control a balance of power between an AC mains, the energy storage device, and driving of an LED light source. Accessories may be coupled to the bus and receive low voltage power from the bus and optionally receive commands from the master controller and provide sensed data back to the controller. A wireless network interface to the master controller can enable system states based on electrical power company indications and instructions.

Abstract: This disclosure describes systems, methods, and apparatus for a combined LED driver and emergency backup battery system. The LED driver can include current regulation circuitry as well as a bus enabling charging and discharging of an energy storage device from and to the bus. A master controller can control charging and discharging of the energy storage device via a controller of an energy storage management system, and also communicate with the current regulation circuitry to control a balance of power between an AC mains, the energy storage device, and driving of an LED light source. Accessories may be coupled to the bus and receive low voltage power from the bus and optionally receive commands from the master controller and provide sensed data back to the controller. A wireless network interface to the master controller can enable system states based on electrical power company indications and instructions.

Abstract: A system and method are disclosed. The method includes retrofitting network-ready devices to a structure, and registering the devices on a device network in communication with a central application. The method includes causing the central application to associate a location of a device with the device, and to associate a human-understandable identifier with the device. The method includes causing the central application to associate the device with a network address, and causing the central application to: (a) group a first device with a second device, responsive to determining that the first device and the second device are in the same room, in the same service system, and/or of the same type; (b) assign a trigger to the first device; and (c) assign a first automated function to the first device and a second automated function to the second device, the automated functions responsive to the trigger of the first device.

Abstract: Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

Abstract: A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally, the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.

Abstract: A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally, the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.

Abstract: A hot wire chemical vapor deposition apparatus for use in depositing thin films such as amorphous or epitaxial silicon upon a surface of a wafer or substrate by cracking a source or precursor gas such as silane. The apparatus includes a vacuum chamber and a source of precursor gas operable to inject the precursor gas into the chamber. The HWCVD apparatus also includes a heater with a support surface exposed to the deposition chamber, and the heater is operable to heat a substrate positioned upon the support surface. The apparatus includes a catalytic decomposition assembly with a filament positioned between the heater and the precursor gas inlet for selectively passing a current through the filament to resistively heat material of the filament. The filament material may be carbide such as tantalum carbide, which may be coated on a graphite core.

Abstract: Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

Abstract: Crystal oriented photovoltaic cells with increased efficiency are disclosed herein. In an exemplary embodiment, a photovoltaic device includes a metal substrate with a crystalline orientation comprising a diffracting structure integrated into a surface of the metal substrate. The photovoltaic device includes a heteroepitaxial crystal silicon layer having the crystalline orientation of the metal substrate and a heteroepitaxially grown buffer layer having the crystalline orientation. The buffer layer is positioned adjacent to the surface of the metal substrate having the diffracting structure.

Abstract: A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

Abstract: A crystalline, highly textured or biaxially textured, foreign (non-silicon) material, which is closely lattice-matched to silicon, is deposited on a glass or other amorphous or multi-crystalline substrate to provide a template for hetero-epitaxial growth of highly ordered crystalline silicon semiconductor layers on such substrates. This process enables crystalline silicon semiconductor devices, such as photovoltaic devices, transistors, and the like, on such inexpensive substrates, or to enable reduced temperature processing for some kinds of semiconductor devices, such as bottom gate transistors, on crystalline silicon substrates.