Abstract: A joint structure and method for bonding together two components, such as when attaching an electrical circuit element to a conductor on a substrate. The joint structure comprises a mesh infiltrated by a solder material, in which the mesh is preferably formed of a material having a higher thermal conductivity than the solder material. The joint structure is able to offer improvements in thermal conductivity, electrical conductivity, reflow processing, and stress distribution between the structures it connects. Each of these attributes of the joint structure can be tailored to some degree by the choices of materials for the mesh and the solder material.

Abstract: A composite conductor for contacting a semiconductor device chip. A durable substrate subassembly for a high power transistor switching modules. The substrate subassembly is durable because wire bonds to the semiconductor device electrodes are replaced with a soldered metal/ceramic composite conductor. The part of the composite conductor contacting the semiconductor device has a coefficient of thermal expansion close to that of the semiconductor device. The substrate in the substrate subassembly has automatic alignment features. The composite conductor also has automatic alignment features, along with stress relief features. Automatic alignment permits concurrent soldering of the chip to the substrate, and the composite conductor to the chip and to a terminal contact.

Abstract: A parallel dual switch module that is characterized by improved mechanical and electrical packaging efficiency and low cost. The module includes a common terminal defined by a first stamped elongate metal plate insert molded into the module housing, and positive and negative terminals defined by second and third stamped elongate metal plates disposed side-by-side atop the common terminal. Connection areas formed on the positive and negative terminals extend in opposite lateral directions, and interdigitate with connection areas formed on the common terminal, thereby forming two linear parallel rows of connection areas. Adjacent each row of connection areas, and mounted on a baseplate of the module is a set of parallel connected transistors subassemblies. A molded elongate gate collection component is mounted on the baseplate between the sets of transistor subassemblies, and beneath the common terminal.

Abstract: A durable substrate subassembly for a high power transistor switching module. The substrate subassembly is durable because wire bonds to the semiconductor device electrodes are replaced with a soldered metal/ceramic composite conductor. The part of the composite conductor contacting the semiconductor device has a coefficient of thermal expansion close to that of the semiconductor device. The metal of the composite conductor is preferably a strip of copper foil. The ceramic portion is a layer of alumina on the copper foil that is generally coextensive with the semiconductor device electrodes.