Patents by Inventor Charles W. Seabury
Charles W. Seabury has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6232847Abstract: A high-Q precision integrated reversibly trimmable singleband oscillator and tunable multiband oscillator are presented that overcome the problems laser trimming and solid state switches. This is accomplished using micro-electromechanical system (MEMS) technology to integrate an amplifier and its tunable LC network on a common substrate. The LC network can be configured to provide a very narrow bandwidth frequency response which peaks at one or more very specific predetermined frequencies without de-Qing the oscillator.Type: GrantFiled: May 28, 1998Date of Patent: May 15, 2001Assignee: Rockwell Science Center, LLCInventors: Henry O. Marcy, 5th, Kenneth D. Pedrotti, David R. Pehlke, Charles W. Seabury, Jun J. Yao, James L. Bartlett, Mau Chung F. Chang, Deepak Mehrotra, J. L. Julian Tham
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Patent number: 6232841Abstract: Power amplifiers having reactive networks (such as classes C, C-E, E and F) employ tunable reactive devices in their reactive networks, with the reactive devices respective reactance values capable of being adjusted by means of respective control signals. The tunable reactive devices are made from micro-electromechanical (MEM) devices capable of being integrated with the control circuitry needed to produce the control signals and other amplifier components on a common substrate. The reactive components have high Q values across their adjustment range, enabling the amplifier to produce an output with a low harmonic content over a wide range of input signal frequencies, and a frequency agile, high quality output. The invention can be realized on a number of foundry technologies.Type: GrantFiled: July 1, 1999Date of Patent: May 15, 2001Assignee: Rockwell Science Center, LLCInventors: James L. Bartlett, Mau Chung F. Chang, Henry O. Marcy, 5th, Kenneth D. Pedrotti, David R. Pehlke, Charles W. Seabury, Jun J. Yao, Deepak Mehrotra, J. L. Julian Tham
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Patent number: 6094102Abstract: A frequency stabilizer circuit in the form of a charge-pump phase-lock loop utilizing a MEMS capacitance device, preferably a tunable MEMS capacitor or a MEMS capacitor bank, which more rapid and with a greater precision determine the phase and frequency of a carrier signal so that it can be extracted, providing an information signal of interest. Such MEMS devices have the added advantage of providing linear capacitance, low insertion losses, higher isolation and high reliability, they run on low power and permit the entire circuit to be fabricated on a common substrate. The use of the MEMS capacitance device reduces unwanted harmonics generated by the circuit's charge pump allowing the filtering requirements to be relaxed or perhaps eliminated.Type: GrantFiled: April 30, 1999Date of Patent: July 25, 2000Assignee: Rockwell Science Center, LLCInventors: Mau Chung F. Chang, Henry O. Marcy, 5th, Kenneth D. Pedrotti, David R. Pehlke, Charles W. Seabury, Jun J. Yao, James L. Bartlett, J. L. Julian Tham, Deepak Mehrotra
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Patent number: 6049702Abstract: The passive components of a transceiver, such as transmit/receive switches, antennas, inductors, capacitors and resonators, are integrated together on a common substrate to form an integrated passive transceiver section, which, in combination with other components, provides a highly reliable, low-cost, high-performance transceiver. Micro-electromechanical (MEM) device fabrication techniques are used to provide low-loss, high-performance switches and low-loss, high-Q reactive components, and enable the passive transceiver section's high level of integration. The passive components are preferably integrated on a low-cost glass substrate, with transceiver circuits containing active components fabricated on a separate substrate; the separate substrates are interconnected to implement the RF/analog and analog/digital interface portions of a transceiver. Additional MEM switching devices permit multiple, parallel signal paths to be switched in and out of the transceiver circuitry as needed to optimize performance.Type: GrantFiled: December 4, 1997Date of Patent: April 11, 2000Assignee: Rockwell Science Center, LLCInventors: J. L. Julian Tham, Deepak Mehrotra, James L. Bartlett, Mau Chung F. Chang, Henry O. Marcy, 5th, Kenneth D. Pedrotti, David R. Pehlke, Charles W. Seabury, Jun J. Yao
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Patent number: 5959516Abstract: A high Q MEMS capacitor that can be continuously tuned with a large tuning ratio or reversibly trimmed using an electrostatic force. The tunable capacitor has a master/slave structure in which a control voltage is applied to the master (control) capacitor to set the capacitance of the slave (signal) capacitor to which an RF signal is applied via a suspended mechanical coupler. The master-slave structure reduces tuning error by reducing the signal capacitor's surface area and increasing its spring constant, and may eliminate the need for discrete blocking inductors by electrically isolating the control and signal capacitors. The trimmable capacitor provides an electrostatic actuator that selectively engages a stopper with teeth on a tunable capacitor structure to fix the trimmed capacitance.Type: GrantFiled: January 8, 1998Date of Patent: September 28, 1999Assignee: Rockwell Science Center, LLCInventors: Mau Chung F. Chang, Henry O. Marcy, 5.sup.th, Kenneth D. Pedrotti, David R. Pehlke, Charles W. Seabury, Jun J. Yao, Sangtae Park, J. L. Julian Tham, Deepak Mehrotra, James L. Bartlett
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Patent number: 5936150Abstract: A miniature chemical sensor using a thin film acoustic resonator coated with a chemically sensitive sorbent coating. The thin film acoustic resonator has electrodes separated by a thin piezoelectric layer and is supported by a multilayer resonant acoustic isolator. The resonant acoustic isolator has alternating layers of high and low acoustic impedance material, each layer being one quarter acoustic wavelength thick or an odd multiple thereof at the resonant frequency. The resonant acoustic isolator is solidly mounted on a substrate but provides acoustic isolation between the thin film acoustic resonator and the substrate at a resonant frequency.Type: GrantFiled: April 13, 1998Date of Patent: August 10, 1999Assignee: Rockwell Science Center, LLCInventors: Paul H. Kobrin, Charles W. Seabury, Alan B. Harker, Ronald P. O'Toole
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Patent number: 5880921Abstract: A monolithically integrated switched capacitor bank using MEMS technology that is capable of handling GHz signal frequencies in both the RF and millimeter bands while maintaining precise digital selection of capacitor levels over a wide tuning range. Each MEMS switch includes a cantilever arm that is affixed to the substrate and extends over a ground line and a gapped signal line. An electrical contact is formed on the bottom of the cantilever arm positioned above and facing the gap in the signal line. A top electrode atop the cantilever arm forms a control capacitor structure above the ground line. A capacitor structure, preferably a MEMS capacitor suspended above the substrate at approximately the same height as the cantilever arm, is anchored to the substrate and connected in series with a MEMS switch.Type: GrantFiled: April 28, 1997Date of Patent: March 9, 1999Assignee: Rockwell Science Center, LLCInventors: J.L. Julian Tham, James L. Bartlett, Mau Chung F. Chang, Henry O. Marcy, 5th, Deepak Mehrotra, Kenneth D. Pedrotti, David R. Pehlke, Charles W. Seabury, Jun J. Yao
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Patent number: 5872489Abstract: An integrated, tunable inductance network features a number of fixed inductors fabricated on a common substrate along with a switching network made up of a number of micro-electromechanical (MEM) switches. The switches selectably interconnect the inductors to form an inductance network having a particular inductance value, which can be set with a high degree of precision when the inductors are configured appropriately. The preferred MEM switches introduce a very small amount of resistance, and the inductance network can thus have a high Q. The MEM switches and inductors can be integrated using common processing steps, reducing parasitic capacitance problems associated with wire bonds and prior art switches, increasing reliability, and reducing the space, weight and power requirements of prior art designs.Type: GrantFiled: April 28, 1997Date of Patent: February 16, 1999Assignee: Rockwell Science Center, LLCInventors: Mau Chung F. Chang, Henry O. Marcy, 5th, Deepak Mehrotra, Kenneth D. Pedrotti, David R. Pehlke, Charles W. Seabury, Jun J. Yao, James L. Bartlett, J. L. Julian Tham
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Patent number: 5834975Abstract: An integrated, variable gain microwave frequency power amplifier comprises a number of individual amplifier stages which contain microwave frequency active devices. Each stage is fed with a common input signal, and the individual stage outputs are connected to respective micro-electromechanical (MEM) switches which, when closed, connect the individual outputs together to form the power amplifier's output. The power amplifier's gain is determined by the number of outputs connected together. The preferred switch provides low insertion loss and excellent electrical isolation, enabling a number of amplifier stages to be efficiently interconnected to provide a wide dynamic range power amplifier. The switches are preferably integrated on a common substrate with the active devices, eliminating the need for wire bonds and reducing parasitic capacitances.Type: GrantFiled: March 12, 1997Date of Patent: November 10, 1998Assignee: Rockwell Science Center, LLCInventors: James L. Bartlett, Mau Chung F. Chang, J. Aiden Higgins, Henry O. Marcy, 5th, Deepak Mehrotra, Kenneth D. Pedrotti, David R. Pehlke, Charles W. Seabury, J. L. Julian Tham, Jun J. Yao
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Patent number: 5646583Abstract: A resonant acoustic isolator supports a thin film acoustic resonator comprising a layer of piezoelectric material having top and bottom electrical contacts. The resonant acoustic isolator comprises at least one pair of layers of materials having different acoustic impedances. The isolator materials are deposited in alternating layers of high and low impedance material, with each layer having a thickness of 1/4 acoustic wavelength at resonant frequency. Silicon dioxide (SiO.sub.2) is preferred for the low impedance material because it is ubiquitous in the semiconductor industry, it has relatively low acoustic impedance with very low intrinsic acoustic loss, and it can be deposited using a variety of convenient methods. Hafnium oxide (HfO.sub.2) is preferred for the high acoustic impedance material because it can be deposited by evaporation to form a hard, dense dielectric having a relatively high acoustic impedance. Deposition of an entire stack of alternating SiO.sub.2 and HfO.sub.Type: GrantFiled: January 4, 1996Date of Patent: July 8, 1997Assignee: Rockwell International CorporationInventors: Charles W. Seabury, Paul H. Kobrin, Jeffrey F. DeNatale
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Patent number: 5627112Abstract: A suspended microstructure process assembly includes a first microstructure assembly, with a temporary substrate having a first surface and a first microstructure fabricated on the first surface; a second microstructure assembly, including a final substrate having a second surface and a second microstructure fabricated on the second surface; connecting elements for joining the first microstructure assembly to the second microstructure assembly with a predetermined separation and alignment; and a removable bond temporarily securing the first microstructure assembly to the second microstructure assembly until the temporary substrate is removed. The connecting elements may be electrically conductive contacts or electrically nonconductive spacers. Electrically conductive contacts may be supplied to the first microstructure from a back side of the first microstructure assembly. The first microstructure fabricated on the first surface may incorporate a removable layer to enable multiple level suspended structures.Type: GrantFiled: November 13, 1995Date of Patent: May 6, 1997Assignee: Rockwell International CorporationInventors: William E. Tennant, Isoris S. Gergis, Charles W. Seabury