Abstract: A temperature sensing circuit allows a DRAM array to use less power than would normally be possible due to the reduced refresh rate based on the temperature of the DRAM array. The temperature circuit removes the refresh guardbanding on the DRAMS. Instead of refreshing a 1 megabyte DRAM every 8 ms, refreshing the DRAMs every 128 ms is possible, depending on the temperature of the DRAM array.

Abstract: A dynamic random access memory (DRAM) array is configured to appear to a host computer as a static random access memory (SRAM) array. This allows the use of a component which is functionally equivalent to an SRAM array, but which is less costly and which provides more memory in the same unit area. A temperature sensing circuit allows the DRAM array to use less power than would normally be possible by using a reduced refresh rate based on the temperature of the DRAM array. For example, instead of refreshing a 1 megabyte DRAM every 8 ms, refreshing the DRAM every 128 ms is possible, depending on the temperature of the DRAM array.