Abstract: According to the embodiments provided herein, an island in a regular, closed shape is ablated in a first conductive layer. An interconnect is formed through the island, using the island as an alignment fiducial. The island and the interconnect are isolated from the remainder of the first conductive layer.

Abstract: According to the embodiments provided herein, a photovoltaic device can have one or more cells with a conducting layer interconnect.

Abstract: According to the embodiments provided herein, a method for scribing a layer stack of a photovoltaic device can include directing a laser scribing waveform to a film side of a layer stack. The laser scribing waveform can include pulse groupings that repeat at a group repetition period of greater than or equal to 1.5 µs. Each pulse of the pulse groupings can have a pulse width of less than or equal to 900 fs.

Abstract: According to the embodiments provided herein, a method for scribing a layer stack of a photovoltaic device can include directing a laser scribing waveform to a film side of a layer stack. The laser scribing waveform can include pulse groupings that repeat at a group repetition period of greater than or equal to 1.5 ?s. Each pulse of the pulse groupings can have a pulse width of less than or equal to 900 fs.

Abstract: According to the embodiments provided herein, a method for scribing a layer stack of a photovoltaic device can include directing a laser scribing waveform to a film side of a layer stack. The laser scribing waveform can include pulse groupings that repeat at a group repetition period of greater than or equal to 1.5 ?s. Each pulse of the pulse groupings can have a pulse width of less than or equal to 900 fs.

Abstract: A photovoltaic device includes a substrate and has a transparent conductive oxide layer, a conductive back layer, and at least one intermediate semiconductor layer formed thereon. An isolation scribe divides and electrically isolates the oxide layer, the back layer and the semiconductor layer to define two photovoltaic cells. A conductor extends across the isolation scribe and connects the back layer of one photovoltaic cell to the oxide layer of the other photovoltaic cell.

Abstract: A method to improve CdTe-based photovoltaic device efficiency is disclosed. The CdTe-based photovoltaic device can include oxygen or silicon in semiconductor layers.

Abstract: A method to improve CdTe-based photovoltaic device efficiency is disclosed. The CdTe-based photovoltaic device can include oxygen or silicon in semiconductor layers.

Abstract: A method for non-destructively detecting the presence of banded regions in a metal is described. The method involves sending an ultrasonic wave into the metal and obtaining reflected signals. The reflected signals are compared with each other to determine variations in signal intensity. A banded region within the metal can be observed as a weaker reflected signal than a reflected backwall signal, thus accurately identifying a location of banding within the metal. Metal articles with a low percent of banding are also described.

Abstract: A process is described for processing metal which includes clock rolling a metal plate until the desired thickness is achieved to form a rolled plate. Sputtering targets and other metal articles are further described.

Abstract: A method of forming a sputtering target assembly and the sputtering target assembly made therefrom are described. The method can include bonding a sputtering target to a backing plate with the use of solder, braze metal, or alloys thereof, and reflowing the solder or braze metal after bonding the sputtering target to the backing plate.

Abstract: A non-contact system and method for measuring an article surface, like a surface (or portion thereof) of a sputtering target assembly, are provided. For instance, the method includes scanning a surface with a sensing beam, and measuring the distance traveled by the sensing beam reflected from the surface, to a sensing device. The system can include a sensing device for collecting surface data at a plurality of points on the surface, and an analyzing device for analyzing the collected data.

Abstract: A method of making sputter targets using rotary axial forging is described. Other thermomechanical working steps can be used prior to and/or after the forging step. Sputter targets are further described which can have unique grain size and/or crystal structures.

Abstract: A sputtering target monitoring system (20) for monitoring the status of a sputtering source target (22) during the sputtering process. The collection of data is initiated based on measured voltages in the sputtering source target (22), whereas the arcing count is determined based on current spikes or interruptions to the current in the sputtering source target (22) during the sputtering process. The real time data collected during the sputtering process is recorded and displayed in table or graphical format at any time during the sputtering process. Thus, problems in the sputtering process, or in the sputtering source (22), including an approaching end of life of the target may be easily ascertained. Alarms, messages or other indicators may be used to alert operators to problems or conditions during the sputtering process.

Abstract: Tantalum metal, niobium metal, alloys thereof and other bcc metals and alloys thereof having a texture of primary or mixed (110) on the surface and/or throughout the thickness of the metal is described. Also described are the processes for making the tantalum metal and other bcc metal with a texture of primary or mixed (110) and the process of making a sputtering target from the tantalum metal or other bcc metal with a texture of primary or mixed (110).

Abstract: Methods for reducing inclusion content of sputter targets and targets so produced are disclosed. Inclusions may be reduced by adding a small amount of Si to the molten Al or molten Al alloy followed by filtering of the molten metals through a filter medium. Targets having substantially no inclusions therein of greater than about 400 ?m are especially useful in the sputtering of large flat panel displays and result, upon sputtering, in a reduction in the amount of macroparticles sputtered onto the substrate.

Abstract: A method and apparatus for thermographically evaluating the bond integrity of a sputtering target assembly is described. The method includes applying a heating or cooling medium or energy to one surface of the assembly and acquiring a graphic recording of a corresponding temperature change on the opposing surface of the assembly using an imaging device. Also described is a method of mathematically analyzing the pixel data recorded in each frame to produce an integrated normalized temperature map that represents the bond integrity of the assembly.