Abstract: A gallium arsenide photo-responsive device (40) is provided with an intermediate, transparent layer (28) of refractory metal or alkaline earth metal forming a tenacious bond between a non-hydroscopic oxide layer (24) and a noble metal Schottky barrier layer (30). The device has a gallium arsenide substrate with a predetermined type conductivity and a gallium arsenide epitaxial layer (16) with the same type conductivity but a lower charge carrier concentration grown on the substrate. The oxide layer (24) is formed to cover the epitaxial layer (16) and the transparent metal layer (28) followed by the noble metal layer (30) are deposited upon the oxide layer. An interdigitated ohmic contact (32) is then formed upon the noble metal layer.

Abstract: A method of mounting silicon solar cells in a planar array that not only lds electrical insulation between cells but allows for a multifold increase in thermal dissipation of the cell array, comprising metallizing a wafer of beryllium oxide on each side so that the outer surface is copper, etching the wafer on one side so that the only metallized parts which remain are those on which the solar cells are to be mounted or wiring is to be attached, soldering the solar cells on the unetched copper prominences, coating the aluminum panel on which the cells are mounted with a copper layer, soldering the underside of the wafer on the upper surface of the aluminum panel with soft solder such as indium, and covering all remaining passive surfaces with a teflon F.E.P. tape the underside of which carries a layer of slver and then a layer of inconel metal.