Patents by Inventor Charlie Hotz
Charlie Hotz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11092850Abstract: Embodiments of a display device are described. The display device includes a first sub-pixel with a first quantum dot (QD) film and a first filter element. The QD film receives both UV light and blue light and converts a portion of the received light to emit a secondary light different from the UV and blue light. The filter element is disposed on the quantum dot film and allows the secondary light to pass through the filter element, and the filter element blocks an unconverted portion of the received light from passing through the filter element. The second sub-pixel has a second filter element that allows blue light to pass through the second filter element, and the second filter element blocks the UV light from passing through the second filter element.Type: GrantFiled: August 22, 2018Date of Patent: August 17, 2021Assignee: Nanosys, Inc.Inventors: Ernest C. Lee, Charlie Hotz, Jason Hartlove
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Publication number: 20190064603Abstract: Embodiments of a display device are described. The display device includes a first sub-pixel with a first quantum dot (QD) film and a first filter element. The QD film receives both UV light and blue light and converts a portion of the received light to emit a secondary light different from the UV and blue light. The filter element is disposed on the quantum dot film and allows the secondary light to pass through the filter element, and the filter element blocks an unconverted portion of the received light from passing through the filter element. The second sub-pixel has a second filter element that allows blue light to pass through the second filter element, and the second filter element blocks the UV light from passing through the second filter element.Type: ApplicationFiled: August 22, 2018Publication date: February 28, 2019Inventors: Ernest C. Lee, Charlie Hotz, Jason Hartlove
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Patent number: 10029972Abstract: The present invention is in the field of nanostructure synthesis. The present invention is directed to methods for producing nanostructures, particularly Group III-V semiconductor nanostructures. The present invention is also directed to preparing Group III inorganic compounds that can be used as precursors for nanostructure synthesis.Type: GrantFiled: November 10, 2016Date of Patent: July 24, 2018Assignee: Nanosys, Inc.Inventors: John J. Curley, Tim Slugocki, Charlie Hotz
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Publication number: 20180158984Abstract: Embodiments of the present application relate to the use of quantum dots mixed with spacer particles. An illumination device includes a first conductive layer, a second conductive layer, and an active layer disposed between the first conductive layer and the second conductive layer. The active layer includes a plurality of quantum dots that emit light when an electric field is generated between the first and second conductive layers. The quantum dots are interspersed with spacer particles that do not emit light when the electric field is generated between the first and second conductive layers.Type: ApplicationFiled: November 28, 2017Publication date: June 7, 2018Inventors: Jesse Manders, Christian Ippen, Don Zehnder, Jonathan Truskier, Charlie Hotz
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Publication number: 20170250322Abstract: Low concentration cadmium-containing quantum dot compositions are disclosed which, when contained in a film within a display, exhibit high color gamut, high energy efficiency, and a narrow full width at half maximum at individual wavelength emissions.Type: ApplicationFiled: February 24, 2017Publication date: August 31, 2017Applicant: NANOSYS, Inc.Inventors: Chunming WANG, Charlie HOTZ, Jason HARTLOVE, Ernest LEE
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Publication number: 20170137360Abstract: The present invention is in the field of nanostructure synthesis. The present invention is directed to methods for producing nanostructures, particularly Group III-V semiconductor nanostructures. The present invention is also directed to preparing Group III inorganic compounds that can be used as precursors for nanostructure synthesis.Type: ApplicationFiled: November 10, 2016Publication date: May 18, 2017Inventors: John J. CURLEY, Tim SLUGOCKI, Charlie HOTZ
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Patent number: 8410357Abstract: Disclosed is a novel thin film photovoltaic device and a process of making. The device comprises an interface layer between the absorber layer and the electrode resulting in an improved back contact and improved device efficiency. The interface layer comprises a material comprising a Ma-(Group VIA)b compound, where M is a transition metal the Group VIA designates Te, Se and/or S.Type: GrantFiled: January 28, 2010Date of Patent: April 2, 2013Assignee: Solexant Corp.Inventors: Puthur D. Paulson, Craig Leidholm, Damoder Reddy, Charlie Hotz
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Patent number: 8143512Abstract: The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the absorber layer and the window layer to create improved junctions. The present invention also discloses methods for making and surface treatments for thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration to create devices with improved junctions.Type: GrantFiled: March 24, 2009Date of Patent: March 27, 2012Assignee: Solexant Corp.Inventors: Puthur D. Paulson, Charlie Hotz, Craig Leidholm, Damoder Reddy
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Publication number: 20120067408Abstract: The present invention discloses an absorber composition and photovoltaic device (PV) using the composition comprising nanoparticles and/or sintered nanoparticles comprising compounds having the formula MAxMByMCz(LAaLBb)4 where MA, MB and MC comprise elements chosen from the group consisting of Fe, Co, Ni, Cu, Zn, Cd, Sn and Pb, LA and LB are chalcogens and x is between 1.5 and 2.2, y and z are independently the same or different and are between 0.5 and 1.5 and (a+b)=1. Particularly preferred synthetic routes to uniform thin films in PV devices comprising sintered nanoparticles of Cu2ZnSnSe4 and Cu2ZnSnS4 are disclosed.Type: ApplicationFiled: September 16, 2010Publication date: March 22, 2012Applicant: SOLEXANT CORP.Inventors: Charlie Hotz, Margaret Hines, Donald Zehnder, Damoder Reddy, Jing Tang
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Publication number: 20110061737Abstract: The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device. The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a superstrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device where the interface layer comprises nanoparticles or nanoparticles that are sintered.Type: ApplicationFiled: November 21, 2010Publication date: March 17, 2011Applicant: SOLEXANT CORP.Inventors: Charlie Hotz, Puther D. Paulson, Craig Leidholm, Damoder Reddy
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Patent number: 7858872Abstract: The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device. The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a superstrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device where the interface layer comprises nanoparticles or nanoparticles that are sintered.Type: GrantFiled: March 13, 2009Date of Patent: December 28, 2010Assignee: Solexant Corp.Inventors: Charlie Hotz, Puthur D. Paulson, Craig Leidholm, Damoder Reddy
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Publication number: 20100229931Abstract: Disclosed is a novel thin film photovoltaic device and a process of making. The device comprises an interface layer between the absorber layer and the electrode resulting in an improved back contact and improved device efficiency. The interface layer comprises a material comprising a Ma-(Group VIA)b compound, where M is a transition metal the Group VIA designates Te, Se and/or S.Type: ApplicationFiled: January 28, 2010Publication date: September 16, 2010Applicant: Solexant Corp.Inventors: Damoder Reddy, Charlie Hotz, Puthur D. Paulson, Craig Leidholm
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Publication number: 20090242029Abstract: The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the absorber layer and the window layer to create improved junctions. The present invention also discloses methods for making and surface treatments for thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration to create devices with improved junctions.Type: ApplicationFiled: March 24, 2009Publication date: October 1, 2009Applicant: Solexant Corp.Inventors: Puthur Paulson, Charlie Hotz, Craig Leidholm, Damoder Reddy
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Publication number: 20090235986Abstract: The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device. The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a superstrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device where the interface layer comprises nanoparticles or nanoparticles that are sintered.Type: ApplicationFiled: March 13, 2009Publication date: September 24, 2009Applicant: Solexant CorpInventors: Charlie Hotz, Puthur D. Paulson, Craig Leidholm, Damoder Reddy