Patents by Inventor Charlie Tay

Charlie Tay has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating a bottom oxide layer in a trench
    Patent number: 8633113
    Abstract: A method for fabricating a bottom oxide layer in a trench (102) is disclosed. The method comprises forming the trench (102) in a semiconductor substrate (100), depositing an oxide layer to partially fill a field area (104) and the trench (102), wherein said oxide layer has oxide overhang portions (106) and removing the oxide overhang portions (106) of the deposited oxide layer. Thereafter, the method comprises forming a bottom anti-reflective coating (BARC) layer (108) to cover the oxide layer in the field area (104) and the trench (102), removing the BARC layer (110) from the field area (104), while retaining a predetermined thickness of the BARC layer (112) in the trench (102), removing the oxide layer from the field area (104) and removing the BARC layer and oxide layer in the trench (102) to obtain a predetermined thickness of the bottom oxide layer (114).
    Type: Grant
    Filed: May 22, 2012
    Date of Patent: January 21, 2014
    Assignee: Silterra Malaysia Sdn Bhd
    Inventors: Charlie Tay, Venkatesh Madhaven, Arjun K. Kantimahanti
  • METHOD FOR FABRICATING A BOTTOM OXIDE LAYER IN A TRENCH
    Publication number: 20120309200
    Abstract: A method for fabricating a bottom oxide layer in a trench (102) is disclosed. The method comprises forming the trench (102) in a semiconductor substrate (100), depositing an oxide layer to partially fill a field area (104) and the trench (102), wherein said oxide layer has oxide overhang portions (106) and removing the oxide overhang portions (106) of the deposited oxide layer. Thereafter, the method comprises forming a bottom anti-reflective coating (BARC) layer (108) to cover the oxide layer in the field area (104) and the trench (102), removing the BARC layer (110) from the field area (104), while retaining a predetermined thickness of the BARC layer (112) in the trench (102), removing the oxide layer from the field area (104) and removing the BARC layer and oxide layer in the trench (102) to obtain a predetermined thickness of the bottom oxide layer (114).
    Type: Application
    Filed: May 22, 2012
    Publication date: December 6, 2012
    Inventors: Charlie Tay, Venkatesh Madhaven, Arjun K. Kantimahanti
  • Shallow trench isolation
    Patent number: 7241665
    Abstract: A method for forming an isolation structure on a semiconductor substrate includes opening a portion of a pad oxide layer overlying the substrate using a process gas including an etchant gas and a polymer-forming gas. A portion of the substrate exposed by the opening step is etched to form a trench having a first slope and a second slope. The first slope is greater than 45 degrees, and the second slope is less than 45 degrees. The trench is filled to form the isolation structure.
    Type: Grant
    Filed: July 12, 2006
    Date of Patent: July 10, 2007
    Assignee: SilTerra Malaysia Sdn. Bhd.
    Inventors: Inki Kim, Sang Yeon Kim, Min Paek, Ch'ng Toh Ghee, Ramakrishnan Rajagopal, Chiew Sin Ping, Wan Gie Lee, Choong Shiau Chien, Charlie Tay, Chang Gi Lee, Hitomi Watanabe, Naoto Inoue
  • Shallow trench isolation
    Publication number: 20060258116
    Abstract: A method for forming an isolation structure on a semiconductor substrate includes opening a portion of a pad oxide layer overlying the substrate using a process gas including an etchant gas and a polymer-forming gas. A portion of the substrate exposed by the opening step is etched to form a trench having a first slope and a second slope. The first slope is greater than 45 degrees, and the second slope is less than 45 degrees. The trench is filled to form the isolation structure.
    Type: Application
    Filed: July 12, 2006
    Publication date: November 16, 2006
    Applicant: SilTerra Malaysia Sdn. Bhd.
    Inventors: Inki Kim, Sang Kim, Min Paek, Ch'ng Toh Ghee, Ramakrishnan Rajagopal, Chiew Ping, Wan Lee, Choong Chien, Charlie Tay, Chang Lee, Hitomi Watanabe, Naoto Inoue
  • Shallow trench isolation
    Patent number: 7091104
    Abstract: A method for forming an isolation structure on a semiconductor substrate includes opening a portion of a pad oxide layer overlying the substrate using a process gas including an etchant gas and a polymer-forming gas. A portion of the substrate exposed by the opening step is etched to form a trench having a first slope and a second slope. The first slope is greater than 45 degrees, and the second slope is less than 45 degrees. The trench is filled to form the isolation structure.
    Type: Grant
    Filed: January 23, 2003
    Date of Patent: August 15, 2006
    Assignee: SilTerra Malaysia Sdn. Bhd.
    Inventors: Inki Kim, Sang Yeon Kim, Min Paek, Ch'ng Toh Ghee, Ramakrishnan Rajagopal, Chiew Gie Lee, Wan Gie Lee, Choong Shiau Chien, Charlie Tay, Chang Gi Lee, Hitomi Watanabe, Naoto Inoue
  • Shallow trench isolation
    Publication number: 20040147090
    Abstract: A method for forming an isolation structure on a semiconductor substrate includes opening a portion of a pad oxide layer overlying the substrate using a process gas including an etchant gas and a polymer-forming gas. A portion of the substrate exposed by the opening step is etched to form a trench having a first slope and a second slope. The first slope is greater than 45 degrees, and the second slope is less than 45 degrees. The trench is filled to form the isolation structure.
    Type: Application
    Filed: January 23, 2003
    Publication date: July 29, 2004
    Applicant: SilTerra Malaysia Sdn. Bhd.
    Inventors: Inki Kim, Sang Yeon Kim, Min Paek, Ch?apos;ng Toh Ghee, Ramakrishnan Rajagopal, Chiew Sin Pin, Wan Gie Lee, Choong Shiau Chien, Charlie Tay, Chang Gi Lee, Hitomi Watanabe, Naoto Inoue