Abstract: Apparatus and method for on-wafer burn-in of a semiconductor device. In a preferred embodiment, the present invention is realized using an auto-prober commonly used in scan-testing of semiconductor devices. Specifically, in one embodiment, the auto-prober is programmed to sequentially apply an elevated current to each semiconductor device on a wafer. During the application of the elevated current, which substantially exceeds the normal operating current of the device, performance characteristics of the device, including its output power, is detected and registered. Preferably, each device is subjected to multiple scans by the elevated current. The device's performance characteristics is then analyzed. If a device exhibits consistent power output over different scans, it is not likely to suffer from infant mortality. If the device exhibits a shift in power output over successive scans, the device is likely to run into early failure and should be rejected.

Abstract: An apparatus and method of modular manufacturing process for a parallel optical transmitter, receiver and/or transceiver is disclosed. The modular process assembles an array of optoelectronic devices to an array header to form an optoelectronic array package. Once the optoelectronic array package is assembled, it is tested and verified the functionality and alignment between the optoelectronic devices and optical fibers. The optoelectronic array package is subsequently coupled to an optical lens array to form an array optical subassembly. After the array optical subassembly is tested, it is coupled to an optical fiber connector to form an optical module. The optical module is then tested to verify its functionality and alignment.

Abstract: An apparatus and method of modular manufacturing process for a parallel optical transmitter, receiver and/or transceiver is disclosed. The modular process assembles an array of optoelectronic devices to an array header to form an optoelectronic array package. Once the optoelectronic array package is assembled, it is tested and verified the functionality and alignment between the optoelectronic devices and optical fibers. The optoelectronic array package is subsequently coupled to an optical lens array to form an array optical subassembly. After the array optical subassembly is tested, it is coupled to an optical fiber connector to form an optical module. The optical module is then tested to verify its functionality and alignment.

Abstract: Apparatus and method for on-wafer burn-in of a semiconductor device. In a preferred embodiment, the present invention is realized using an auto-prober commonly used in scan-testing of semiconductor devices. Specifically, in one embodiment, the auto-prober is programmed to sequentially apply an elevated current to each semiconductor device on a wafer. During the application of the elevated current, which substantially exceeds the normal operating current of the device, performance characteristics of the device, including its output power, is detected and registered. Preferably, each device is subjected to multiple scans by the elevated current. The device's performance characteristics is then analyzed. If a device exhibits consistent power output over different scans, it is not likely to suffer from infant mortality. If the device exhibits a shift in power output over successive scans, the device is likely to run into early failure and should be rejected.

Abstract: Apparatus and method for on-wafer burn-in of a semiconductor device. In a preferred embodiment, the present invention is realized using an auto-prober commonly used in scan-testing of semiconductor devices. Specifically, in one embodiment, the auto-prober is programmed to sequentially apply an elevated current to each semiconductor device on a wafer. During the application of the elevated current, which substantially exceeds the normal operating current of the device, performance characteristics of the device, including its output power, is detected and registered. Preferably, each device is subjected to multiple scans by the elevated current. The device's performance characteristics is then analyzed. If a device exhibits consistent power output over different scans, it is not likely to suffer from infant mortality. If the device exhibits a shift in power output over successive scans, the device is likely to run into early failure and should be rejected.

Abstract: Apparatus and method for on-wafer burn-in of a semiconductor device. In a preferred embodiment, the present invention is realized using an auto-prober commonly used in scan-testing of semiconductor devices. Specifically, in one embodiment, the auto-prober is programmed to sequentially apply an elevated current to each semiconductor device on a wafer. During the application of the elevated current, which substantially exceeds the normal operating current of the device, performance characteristics of the device, including its output power, is detected and registered. Preferably, each device is subjected to multiple scans by the elevated current. The device's performance characteristics is then analyzed. If a device exhibits consistent power output over different scans, it is not likely to suffer from infant mortality. If the device exhibits a shift in power output over successive scans, the device is likely to run into early failure and should be rejected.