Abstract: Embodiments of the present invention are directed to processing methods and resulting structures for non-shared metal gate integrations for transistors. In a non-limiting embodiment of the invention, a first nanosheet stack is formed in a first region of a substrate and a second nanosheet stack is formed in a second region of the substrate. A first work function metal stack is formed around nanosheets in the first nanosheet stack and nanosheets in the second nanosheet stack, and a first sacrificial material is formed around the first work function metal stack. The first sacrificial material in the second nanosheet stack is replaced with a second sacrificial material and the first sacrificial material and the first work function metal stack in the first nanosheet stack are replaced with a second work function metal stack. The second sacrificial material in the second nanosheet stack is replaced with a third work function metal stack.

Abstract: The invention relates to methods for increasing seed yield, increasing the total content of protein and/or lipid in seeds and reducing glucosinolate levels by reducing the expression or activity of UPL3. The invention also relates to genetically altered plants characterised by the above phenotypes and methods of producing such plants.

Abstract: The invention relates to methods for increasing seed yield, increasing the total content of protein and/or lipid in seeds and reducing glucosinolate levels by reducing the expression or activity of UPL3. The invention also relates to genetically altered plants characterised by the above phenotypes and methods of producing such plants.

Abstract: The invention relates to methods for increasing seed yield, increasing the total content of protein and/or lipid in seeds and reducing glucosinolate levels by reducing the expression or activity of UPL3. The invention also relates to genetically altered plants characterised by the above phenotypes and methods of producing such plants.