Abstract: A rectifier diode of electric generator applies to electric generators with violent vibrations, especially to those used in heavy-duty vehicles. Good conductivity in the rectifier diode is ensured to enhance stable operations of the electric generators. The rectifier diode has a main body, a conducting fixing component, a flexible conducting wire, and a connecting component. The main body has a cup with a semiconductor device therein and a lead electrically connected to the semiconductor device. The lead protrudes outwards. The conducting fixing component is connected to the lead. The flexible conducting wire is connected to the fixing component. The connecting component is connected to the distal end of the flexible conducting wire.

Abstract: An embedded-type power semiconductor package device that can clasp an isolating material over a semiconductor die in the inside thereof that through a two-fold strategy reduces the impact force during the embedding process, which includes a pin, a semiconductor die, and a cup. The cup is formed with a cup cavity, an inner wall, a groove and a heat-conductive seat. The heat-conductive seat has an annular retaining wall that is longitudinally protruding from a periphery thereof and a clasping wall that is transversely protruding from a periphery thereof. A cushion sleeve is annularly disposed in the groove and contacted with the inner wall. An insulating material is spread around the semiconductor die and the pin, thereby isolating the semiconductor die from the untouched area. The cup cavity is cast with an isolating material. The clasping wall can hold the isolating material in the cup cavity.

Abstract: A method for manufacturing a heat-dissipating structure of a rectifier combines heat pipes into the heat-dissipating structure of the rectifier to enhance the heat-dissipating efficiency thereof. A metal tube of a heat pipe is has an inlet. A wick structure is formed inside the metal tube. The inlet of the metal tube is sealed. The metal tube is disposed in a mold of a heat-dissipating shell. A melted metal is cast into the mold and forms a heat-dissipating shell. The heat-dissipating shell is taken out from the mold. The sealed inlet of the metal tube in the heat-dissipating shell is cut. The metal tube is filled with a working fluid. The inlet of the metal tube is sealed.

Abstract: A method and equipment for manufacturing a power diode are described. More particularly, a manufacturing method and a unit of equipment used to remove an exposed portion of a P-N junction of a semiconductor (especially for power diodes) are described. The equipment has a reaction vessel having an input outlet and defining an airtight space inside. The power diode is placed inside the reaction vessel. A plasma generator is used to ionize an etching gas to produce free radicals and ions. The plasma generator is connected with the input outlet to flush the ionized etching gas into the reaction vessel. A shield plate is disposed under the input outlet of the reaction vessel to form a flow direction and a concentration distribution of the etching gas to etch a laterally exposed portion of the P-N junction.

Abstract: An embedded package for power semiconductor device comprises a lead, a cup, a semiconductor device, an insulation glue and an isolation glue. The cup has a cavity, an inner wall, a gap and a heat-conductive stage therein. An annulus baffle is formed on the heat-conductive stage. The rigidity between the heat-conduction stage and bottom of the cup is larger than the rigidity between the gap and bottom of the cup to protect the semiconductor device. The semiconductor device is connected between the lead and the heat-conductive stage, and is coated by the insulation glue to prevent from leak. The isolation glue is coated on an outer face of the insulation glue to block moisture.