Patents by Inventor Charng-Shyang Jong
Charng-Shyang Jong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8097476Abstract: This invention discloses a light emitting diode, a wafer level package method, a wafer level bonding method, and a circuit structure for a wafer level package. The light emitting diode includes a package carrier, a conducting material, at least one light emitting diode structure and a package material. The package carrier has at least one package unit and two through holes on the package carrier and corresponding to the package unit. The conducting material is disposed in the through holes and formed at the bottom of the package unit. The light emitting diode structure is formed on a substrate. The substrate having a light emitting diode structure is flipped over in the package unit, and the electrodes of the light emitting diode structure are bonded with the conducting material. After the substrate is removed, a package material is stuffed in the package unit or on the light emitting diode structure.Type: GrantFiled: May 16, 2007Date of Patent: January 17, 2012Assignees: Epileds Technologies Inc., Silicon Base Developmen Inc.Inventors: Charng-Shyang Jong, Ming-Sen Hsu, Chin-Fu Ku, Chih-Ming Chen, Deng-Huei Hwang
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Publication number: 20080099771Abstract: This invention discloses a light emitting diode, a wafer level package method, a wafer level bonding method, and a circuit structure for a wafer level package. The light emitting diode includes a package carrier, a conducting material, at least one light emitting diode structure and a package material. The package carrier has at least one package unit and two through holes on the package carrier and corresponding to the package unit. The conducting material is disposed in the through holes and formed at the bottom of the package unit. The light emitting diode structure is formed on a substrate. The substrate having a light emitting diode structure is flipped over in the package unit, and the electrodes of the light emitting diode structure are bonded with the conducting material. After the substrate is removed, a package material is stuffed in the package unit or on the light emitting diode structure.Type: ApplicationFiled: May 16, 2007Publication date: May 1, 2008Inventors: Charng-Shyang Jong, Ming-Sen Hsu, Chin-Fu Ku, Chih-Ming Chen, Deng-Huei Hwang
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Publication number: 20060284191Abstract: A light emitting diode includes a light emitting structure, a heterojunction, a first electrode, and a second electrode. The light emitting structure has a top surface where the first electrode and the second electrode are positioned thereon. The heterojunction is in the light emitting structure and includes a first semiconductor layer and a second semiconductor layer of differently doped types. The first semiconductor layer has a boundary and is electrically connected to the first electrode. The first electrode includes at least two wire-bonding pads. A smallest horizontal distance (d) between a center of the first electrode and the boundary is in a range of about 89 ?m to 203 ?m. The second electrode is electrically connected to the second semiconductor layer and includes an outer arm, which peripherally encompasses the top surface.Type: ApplicationFiled: June 15, 2006Publication date: December 21, 2006Inventors: Cheng Yang, Charng-Shyang Jong, Chuan-Cheng Tu, Kau-Feng Jan, Jen-Chau Wu
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Patent number: 7061110Abstract: An ohmic contact of semiconductor and its manufacturing method are disclosed. The present invention provides a low resistivity ohmic contact so as to improve the performance and reliability of the semiconductor device. This ohmic contact is formed by first coating a transition metal and a noble metal on a semiconductor material; then heat-treating the transition metal and the noble metal in an oxidizing environment to oxidize the transition metal. In other words, this ohmic contact primarily includes a transition metal oxide and a noble metal. The oxide in the film can be a single oxide, or a mixture of various oxides, or a solid solution of various oxides. The metal of the film can be a single metal, or various metals or an alloy thereof. The structure of the film can be a mixture or a laminate or multilayered including oxide and metal. The layer structure includes at least one oxide layer and one metal layer, in which at least one oxide layer is contacting to semiconductor.Type: GrantFiled: September 1, 1999Date of Patent: June 13, 2006Assignee: Industrial Technology Research InstituteInventors: Jin-Kuo Ho, Charng-Shyang Jong, Chao-Nien Huang, Chin-Yuan Chen, Chienchia Chiu, Chenn-shiung Cheng, Kwang Kuo Shih
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Patent number: 6693306Abstract: A structure of a light emitting diode (LED) and a method of making the same are disclosed. The present invention is suitable for the light emitting diode having the area that is larger than 100 mil2 and having the insulating substrate, and is featured in that the P electrode and the N electrode are mutually intercrossed. With the use of the present invention, the light emitted by each individual unit chip is more even; the operating voltage of the device is reduced; the cut size of the device can be enlarged arbitrarily according to the size of the unit chip; and the light emitting efficiency is increased.Type: GrantFiled: July 22, 2002Date of Patent: February 17, 2004Assignee: United Epitaxy Company, Ltd.Inventors: Tzer-Perng Chen, Rong-Yih Hwang, Charng-Shyang Jong, Cheng-Chung Young
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Publication number: 20040012030Abstract: A structure of a light emitting diode (LED) and a method of making the same are disclosed. The present invention is suitable for the light emitting diode having the area that is larger than 100 mil2 and having the insulating substrate, and is featured in that the P electrode and the N electrode are mutually intercrossed. With the use of the present invention, the light emitted by each individual unit chip is more even; the operating voltage of the device is reduced; the cut size of the device can be enlarged arbitrarily according to the size of the unit chip; and the light emitting efficiency is increased.Type: ApplicationFiled: July 22, 2002Publication date: January 22, 2004Applicant: UNITED EPITAXY COMPANY, LTD.Inventors: Tzer-Perng Chen, Rong-Yih Hwang, Charng-Shyang Jong, Cheng-Chung Young
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Publication number: 20020185732Abstract: An ohmic contact of semiconductor and its manufacturing method are disclosed. The present invention provides a low resistivity ohmic contact so as to improve the performance and reliability of the semiconductor device. This ohmic contact is formed by first coating a transition metal and a noble metal on a semiconductor material; then heat-treating the transition metal and the noble metal in an oxidizing environment to oxidize the transition metal. In other words, this ohmic contact primarily includes a transition metal oxide and a noble metal. The oxide in the film can be a single oxide, or a mixture of various oxides, or a solid solution of various oxides. The metal of the film can be a single metal, or various metals or an alloy thereof. The structure of the film can be a mixture or a laminate or multilayered including oxide and metal. The layer structure includes at least one oxide layer and one metal layer, in which at least one oxide layer is contacting to semiconductor.Type: ApplicationFiled: September 1, 1999Publication date: December 12, 2002Inventors: JIN-KUO HO, CHARNG-SHYANG JONG, CHAO-NIEN HUANG, CHIN-YUAN CHEN, CHIENCHIA CHIU, CHENN-SHIUNG CHENG, KWANG KUO SHIH
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Patent number: 6489250Abstract: A method for cutting Group III nitride semiconductor light emitting element comprises the step of discharge-etched on a front face of a chip or cutting channel of a substrate; and breaking on a back surface of the discharge-etching face to be formed with dies. This method is different from the prior art dicing saw and point scribe. Thus, the cutting time is shortened. The consumption of the diamond knife from cutting is reduced. The yield ratio of dies is improved and the outlook is also improved.Type: GrantFiled: November 21, 2000Date of Patent: December 3, 2002Assignee: United Epitaxy Company Ltd.Inventors: Rong-Yih Hwang, Charng-Shyang Jong, Tzer-Perng Chen
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Patent number: 6399408Abstract: The present invention provides a process for effectively producing a high performance light emitting device. A substrate on which an N-type semiconductor layer, a light emitting layer, and a P-type semiconductor layer are formed is provided. The N-type semiconductor layer is cut to be discontinuous. Then the substrate is microwaved. Not only the present invention takes advantage of microwaving process for producing a high performance light emitting device, but also avoids the shortcoming of the device cracking due to over activation of the N-type semiconductor layer by microwave processing.Type: GrantFiled: February 15, 2001Date of Patent: June 4, 2002Assignee: United Epitaxy Company, Ltd.Inventors: Tzong-Liang Tsai, Charng-Shyang Jong
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Patent number: 6380564Abstract: A semiconductor light emitting device has a transparent substrate, an n-type semiconductor layer, a p-type semiconductor layer, an n-type transparent electrode, a p-type transparent electrode, an n-type bonding pad, and a p-type bonding pad. The n-type semiconductor layer is disposed over the transparent substrate. The p-type semiconductor layer and the n-type transparent electrode are provided on the n-type semiconductor layer and arranged alternatively to each other, where the p-type semiconductor layer and the n-type transparent electrode cover different portions of the n-type semiconductor layer respectively. The p-type transparent electrode is provided in contact with the p-type semiconductor layer. The n-type and p-type bonding pads are disposed on the n-type and p-type transparent electrodes respectively, and the areas of these bonding pads are smaller than the area of the corresponding electrodes.Type: GrantFiled: August 16, 2000Date of Patent: April 30, 2002Assignee: United Epitaxy Company, Ltd.Inventors: Tzer-Perng Chen, Rong-Yih Hwang, Charng-Shyang Jong
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Patent number: 6319808Abstract: An ohmic contact of semiconductor and its manufacturing method are disclosed. The present invention provides a low resistivity ohmic contact so as to improve the performance and reliability of the semiconductor device. This ohmic contact is formed by first coating a transition metal and a noble metal on a semiconductor material; then heat-treating the transition metal and the noble metal in an oxidizing environment to oxidize the transition metal. In other words, this ohmic contact primarily includes a transition metal oxide and a noble metal. The oxide in the film can be a single oxide, or a mixture of various oxides, or a solid solution of various oxides. The metal of the film can be a single metal, or various metals or an alloy thereof. The structure of the film can be a mixture or a laminate or multilayered including oxide and metal. The layer structure includes at least one oxide layer and one metal layer, in which at least one oxide layer is contacting to semiconductor.Type: GrantFiled: June 3, 1999Date of Patent: November 20, 2001Assignee: Industrial TechnologyResearch InstituteInventors: Jin-Kuo Ho, Charng-Shyang Jong, Chao-Nien Huang, Chin-Yuan Chen, Chienchia Chiu, Chenn-shiung Cheng, Kwang Kuo Shih