Patents by Inventor Chau-Kuang Liau

Chau-Kuang Liau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8017941
    Abstract: A method of manufacturing a MESFET using ceramic materials includes providing a substrate; providing a ceramic semiconductor material to apply onto the substrate to form a first ceramic semiconductor layer; providing a ceramic semiconductor material which is blended with ions, wherein the ceramic semiconductor material is applied onto a central part of the first ceramic semiconductor layer to form a second ceramic semiconductor layer with ions; providing another ion-mixed ceramic semiconductor material is provided to apply over both sides of the first ceramic semiconductor layer to form a third ceramic semiconductor layer having ions; and respectively plating the second and third ceramic semiconductor layers with metal layers so that the second ceramic semiconductor layer has a gate electrode and the third ceramic semiconductor layer has a source and a drain. A transistor obtained by this method can be put into broader range of applications compared to III-V group transistor.
    Type: Grant
    Filed: October 29, 2008
    Date of Patent: September 13, 2011
    Assignee: Yuan Ze University
    Inventors: Chau-Kuang Liau, Wen-Wei Chou
  • Publication number: 20090194765
    Abstract: A method of manufacturing a MESFET using ceramic materials includes providing a substrate; providing a ceramic semiconductor material to apply onto the substrate to form a first ceramic semiconductor layer; providing a ceramic semiconductor material which is blended with ions, wherein the ceramic semiconductor material is applied onto a central part of the first ceramic semiconductor layer to form a second ceramic semiconductor layer with ions; providing another ion-mixed ceramic semiconductor material is provided to apply over both sides of the first ceramic semiconductor layer to form a third ceramic semiconductor layer having ions; and respectively plating the second and third ceramic semiconductor layers with metal layers so that the second ceramic semiconductor layer has a gate electrode and the third ceramic semiconductor layer has a source and a drain. A transistor obtained by this method can be put into broader range of applications compared to III-V group transistor.
    Type: Application
    Filed: October 29, 2008
    Publication date: August 6, 2009
    Inventors: Chau-Kuang Liau, Wen-Wei Chou
  • Publication number: 20090035701
    Abstract: A photolithography process using a photoresist is as following. A substrate is provided for coating a photoresist thereon to form a photoresist layer and the photoresist is formed by mixing photocatalyst particles and polymer binder in a solvent. The photoresist layer is well-adhesive and has good mechanical strength. A light is illuminated on the photoresist layer through a photo mask having a pre-designed pattern thereon. Then, the portion of the photoresist layer where the light projects is removed by water or another environment-friendly solvent so as to reduce the harmful waste produced in the processes.
    Type: Application
    Filed: October 9, 2007
    Publication date: February 5, 2009
    Inventors: Chau-Kuang Liau, Wen-Wei Chou, Jung-Kang Wu