Abstract: A method for capacitance extraction includes: performing a first capacitance extraction on one or more first regions of a semiconductor layout; performing a second capacitance extraction on one or more second regions of the semiconductor layout, a resolution of the second capacitance extraction being less than a resolution of the first capacitance extraction; constructing a netlist for the semiconductor layout based on results of the first capacitance extraction and of the second capacitance extraction; and modifying the semiconductor layout based on the netlist. The modified semiconductor layout is used to fabricate an integrated circuit.

Abstract: A method comprises identifying a semiconductor device layout region comprising a first n-type metal oxide semiconductor (MOS) device having a first pair of face-to-face diodes adjacent to a second n-type MOS device having a second pair of face-to-face diodes and adding a dummy device between a first body contact of the first n-type MOS device and a second body contact of the second MOS device.

Abstract: An integrated circuit (IC) design system includes a processor; and a non-transitory computer readable medium connected to the processor. The non-transitory computer readable medium is configured to store a configuration file containing a custom IC design parameter, to store a process design kit (PDK) containing a default IC design parameter, and to store instructions for execution by the processor. The instructions for execution by the process include instructions for extracting the custom IC design parameter from the configuration file. The instructions for execution by the process further include instructions for overwriting the default IC design parameter in the PDK with the custom IC design parameter. The instructions for execution by the process further include instructions for creating an IC design file using a module in the PDK using the custom IC design parameter in place of the default IC design parameter.

Abstract: A method comprises identifying a semiconductor device layout region comprising a first n-type metal oxide semiconductor (MOS) device having a first pair of face-to-face diodes adjacent to a second n-type MOS device having a second pair of face-to-face diodes and adding a dummy device between a first body contact of the first n-type MOS device and a second body contact of the second MOS device.

Abstract: An integrated circuit (IC) design system includes a processor; and a non-transitory computer readable medium connected to the processor. The non-transitory computer readable medium is configured to store a configuration file containing a custom IC design parameter, to store a process design kit (PDK) containing a default IC design parameter, and to store instructions for execution by the processor. The instructions for execution by the process include instructions for extracting the custom IC design parameter from the configuration file. The instructions for execution by the process further include instructions for overwriting the default IC design parameter in the PDK with the custom IC design parameter. The instructions for execution by the process further include instructions for creating an IC design file using a module in the PDK using the custom IC design parameter in place of the default IC design parameter.

Abstract: A method comprises identifying a semiconductor device layout region comprising a first n-type metal oxide semiconductor (MOS) device having a first pair of face-to-face diodes adjacent to a second n-type MOS device having a second pair of face-to-face diodes and adding a dummy device between a first body contact of the first n-type MOS device and a second body contact of the second MOS device.

Abstract: An integrated circuit design method includes extracting a custom IC design parameter from a configuration file using a design customization module (DCM) and creating an IC design file with a module in a processor design kit (PDK) using the custom IC design parameter.

Abstract: An integrated circuit design method includes extracting a custom IC design parameter from a configuration file using a design customization module (DCM) and creating an IC design file with a module in a processor design kit (PDK) using the custom IC design parameter.

Abstract: A method comprises identifying a semiconductor device layout region comprising a first n-type metal oxide semiconductor (MOS) device having a first pair of face-to-face diodes adjacent to a second n-type MOS device having a second pair of face-to-face diodes and adding a dummy device between a first body contact of the first n-type MOS device and a second body contact of the second MOS device.

Abstract: An apparatus comprises two n-type metal oxide semiconductor (MOS) devices formed next to each other. Each n-type MOS device further includes a pair of face-to-face diodes formed in an isolation ring. A method of modeling the apparatus comprises reusing four-terminal MOS device models in standard cell libraries and combining the four-terminal MOS device model and the isolation ring model into a 4T MOS plus isolation ring model. The method of modeling the apparatus further comprises adding a dummy device between a body contact of the first n-type MOS device and a body contact of the second n-type MOS device.

Abstract: An apparatus comprises two n-type metal oxide semiconductor (MOS) devices formed next to each other. Each n-type MOS device further includes a pair of face-to-face diodes formed in an isolation ring. A method of modeling the apparatus comprises reusing four-terminal MOS device models in standard cell libraries and combining the four-terminal MOS device model and the isolation ring model into a 4T MOS plus isolation ring model. The method of modeling the apparatus further comprises adding a dummy device between a body contact of the first n-type MOS device and a body contact of the second n-type MOS device.