Patents by Inventor Chaun Lin

Chaun Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Pulse voltage breakdown (VBD) technique for inline gate oxide reliability monitoring
    Patent number: 6602729
    Abstract: Disclosed is a method of testing a dielectric, comprising setting a reference current below a breakdown current of the dielectric, applying a stress voltage to the dielectric below a breakdown voltage of the dielectric and measuring a stress current resulting therefrom, incrementally increasing said stress voltage until said measured stress current exceeds said reference current.
    Type: Grant
    Filed: July 13, 2001
    Date of Patent: August 5, 2003
    Assignee: Infineon Technologies AG
    Inventor: Chaun Lin