Abstract: A method for improving endurance of a memory sub-system including tuning, by a controller, a wear ratio for a single-level cell (SLC) mode of a quad-level cell (QLC) memory device with multilevel caching. The method includes tracking Program/Erase Cycle (PEC) counts accumulated for SLC operations and QLC operations for each superblock of the memory sub-system and calculating an average PEC based on the tracked PEC counts. The method also includes calculating an erase amplification (EA) based on the average PEC.

Abstract: A method for adjusting read levels of a memory device includes detecting, by a drive-adjusted valley track module of a memory controller, a read-intensive workload for the memory device. The method also includes determining, by a drive-adjusted valley track module whether data stored in the memory device related to the read-intensive workload has been exposed to conditions causing errors beyond a correction limit of a valley track module. Responsive to determining the data has been exposed to the conditions, the drive-adjusted valley track module determines a set of read level adjustments for the data. Additionally, the method includes modifying, by the drive-adjusted valley track module, a bin table of the valley track module based on the set of read level adjustments. The method also includes applying, by the valley track module, offset voltage levels from the modified bin table during read operations of the memory device.

Abstract: A technique is disclosed for collecting peak and valley distribution information for debugging a memory device. In some examples, a read voltage from a set of read voltages is set to be applied to memory cells of the memory device. A bit count command is issued to the memory device to apply the read voltage to the memory cells to count a number of memory cells of the memory cells storing a zero bit. The setting and repeating operations are repeated until remaining read voltages of the set of read voltages have been applied to the memory cells to determine the number of memory cells storing the zero bit at each remaining read voltage applied to the memory cells. Bit count data is provided in response to the repeating operation. Debug data characterizing the peak and valley distribution information is provided based on the bit count data.

Abstract: Technologies directed to trim values for different types of write commands is described. A controller may receive a write command to be performed on a set of memory cells of a memory device. The write command may be of a first type or a second type. The controller may select a set of trim values based on the write command being of the first type or the second type. The write command may be executed with the selected set of trim values.

Abstract: A media access control address table updating device is provided. The device includes a processor, a storage, a learning controller, a packet generator, and a traffic manager. The traffic manager determines whether to generate a first back pressure signal based on a current traffic corresponding to a plurality of queues. In response to determining that the first back-pressure signal is generated, the traffic manager transmits the first back-pressure signal to the packet generator. In response to receiving the first back pressure signal from the traffic manager, the packet generator stops generating a notification packet corresponding to a notification event.

Abstract: One or more edge blocks of a die of a memory device are identified. A block assignment data structure associated with the memory device is identified. The block assignment data structure comprises a plurality of records, each record mapping one or more specific blocks of the memory device to a corresponding cell type of a plurality of cell types. The one or more identified edge blocks are assigned, by the block assignment data structure, to a single level cell (SLC) cell type.

Abstract: A system comprising a memory device and a processing device, operatively coupled to the memory device, to perform operations including initiating a programming operation to write data to a set of pages of a superblock of the memory device, determining whether to terminate the programming operation, in response to determining to terminate the programming operation, causing the superblock to be closed to obtain a partially filled superblock comprising a set of closed pages, causing dummy data to be written to a first subset of closed pages of the set of closed pages to obtain a set of dummy pages, and causing a second subset of closed pages of the set of closed pages to be reopened for programming to obtain a set of reopened pages.

Abstract: A system includes a processing device, operatively coupled to a memory device, to perform operations including receiving data from a host system, in response to receiving the data, initiating a write operation to write the data to a set of cache blocks of the memory device, the set of cache blocks including a first cache block and a second cache block, determining whether the first cache block is fully written and whether an amount of data written to the second cache block is greater than or equal to a threshold amount of data, and in response to determining that the first cache block is fully written and that the amount of data written to the second cache block is greater than or equal to the threshold amount of data, causing the data written to the set of cache blocks to be written to a target block of the memory device.

Abstract: The present invention is directed to compounds, compositions and methods for preventing, treating or curing hepatitis B (HBV) infection in human subjects or other animal hosts. The compounds are as also pharmaceutically acceptable, salts, prodrugs, and other derivatives thereof as pharmaceutical compositions and methods for treatment, prevention or eradication of HBV infection.

Abstract: An electronic device includes a memory storage device, a storing unit, and a voltage increasing unit. The storing unit is used for receiving the supply voltage to store energy and releasing energy to generate an standby voltage when the power supply stops providing the supply voltage. The voltage increasing unit is used for receiving the standby voltage, increasing the standby voltage, and providing the increased standby voltage to the memory storage device for preventing data loss in the memory storage device. A related method for preventing data loss in a memory storage device and an electronic device assembly are also provided.

Abstract: A light source module includes a light source and housing. The housing includes a reflecting part, an installed part, and a stop. The reflecting part includes a paraboloidal surface configured for reflecting light beams from the light source. The light source is set in a focal point of the paraboloidal surface. The installed part is configured for installing the light source. The opening is configured for transmitting light beams reflected from the paraboloidal surface. The stop is perpendicularly connected with the installed part, and configured for preventing light beams from the light source from directly passing through the opening.

Abstract: A light source module includes a light source and housing. The housing includes a reflecting part, an installed part, and a stop. The reflecting part includes a paraboloidal surface configured for reflecting light beams from the light source. The light source is set in a focal point of the paraboloidal surface. The installed part is configured for installing the light source. The opening is configured for transmitting light beams reflected from the paraboloidal surface. The stop is perpendicularly connected with the installed part, and configured for preventing light beams from the light source from directly passing through the opening.

Abstract: An electronic device includes a memory storage device, a storing unit, and a voltage increasing unit. The storing unit is used for receiving the supply voltage to store energy and releasing energy to generate an standby voltage when the power supply stops providing the supply voltage. The voltage increasing unit is used for receiving the standby voltage, increasing the standby voltage, and providing the increased standby voltage to the memory storage device for preventing data loss in the memory storage device. A related method for preventing data loss in a memory storage device and an electronic device assembly are also provided.

Abstract: A simulated eye is provided. The simulated eye comprises a main body comprising a front surface. An area is formed on the front surface for simulating pupil portion of an eye. A first ring portion is formed on the front surface and surrounds the area. The first ring portion is covered with a layer of reversible thermochromic material.

Abstract: Methods and devices for isolating and diagnosing disease with a cell adhesion matrix system, mimicking a metastatic, cardiovascular or placental environment, are disclosed. The cell adhesion matrix facilitates the enrichment of target cells such as metastatic tumor cells, fetal cells and endothelial progenitor cells from a fluid sample such as blood for diagnostic and therapeutic applications in treating patients afflicted with disease, such as cancerous, cardiovascular and fetal diseases, as well as for research applications in molecular analysis of metastatic, and cardiovascular and fetal diseases. Blood test prototypes and methods for the cell enrichment and detection of circulating tumor and endothelial cells using multiplex molecular analysis are described herein.