Abstract: A chip package structure is provided. The chip package structure includes a chip. The chip package structure includes a conductive ring-like structure over and electrically insulated from the chip. The conductive ring-like structure surrounds a central region of the chip. The chip package structure includes a first solder structure over the conductive ring-like structure. The first solder structure and the conductive ring-like structure are made of different materials.

Abstract: A semiconductor device structure and a method for forming the same are provided. The semiconductor device structure includes a gate electrode layer formed over a semiconductor substrate and capped with a conductive capping layer. The semiconductor device structure also includes an insulating capping stack having a lower surface that faces and is spaced apart from an upper surface of the conductive capping layer. In addition, the semiconductor device structure includes gate spacers formed over the semiconductor substrate and covering opposing sidewalls of the gate electrode layer, the conductive capping layer, and the insulating capping stack.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a pair of source/drain features formed in a semiconductor substrate and a gate stack formed over a portion of the semiconductor substrate that is between the pair of source/drain features. The semiconductor device structure also includes gate spacers extend along opposing sidewalls of the gate stack and protrude above an upper surface of the gate stack. Additionally, the semiconductor device structure includes a first capping layer formed over the gate stack and spaced apart from the upper surface of the gate stack by a gap. Opposing sidewalls of the first capping layer are covered by portions of the gate spacers that protrude above the upper surface of the gate stack.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a pair of source/drain features formed in a semiconductor substrate and a gate stack formed over a portion of the semiconductor substrate that is between the pair of source/drain features. The semiconductor device structure also includes gate spacers extend along opposing sidewalls of the gate stack and protrude above an upper surface of the gate stack. Additionally, the semiconductor device structure includes a first capping layer formed over the gate stack and spaced apart from the upper surface of the gate stack by a gap. Opposing sidewalls of the first capping layer are covered by portions of the gate spacers that protrude above the upper surface of the gate stack.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a source/drain contact structure formed over a semiconductor substrate, and a first gate stack formed over the semiconductor substrate and adjacent to the source/drain contact structure. The semiconductor device structure also includes an insulating cap structure formed over and separated from an upper surface of the first gate stack. In addition, the semiconductor device structure includes first gate spacers formed over opposing sidewalls of the first gate stack to separate the first gate stack from the source/drain contact structure. The first gate spacers extend over opposing sidewalls of the insulating cap structure, so as to form an air gap surrounded by the first gate spacers, the first gate stack, and the insulating cap structure.

Abstract: A gate-all-around field effect transistor may be provided by forming a sacrificial gate structure and a dielectric gate spacer around a middle portion of a semiconductor plate stack. A source region and a drain region may be formed on end portions of semiconductor plates within the semiconductor plate stack. The sacrificial gate structure and other sacrificial material portions may be replaced with a combination of a gate dielectric layer and a gate electrode. The gate dielectric layer and the gate electrode may be vertically recessed selective to the dielectric gate spacer. A first anisotropic etch process recesses the gate electrode and the gate dielectric layer at about the same etch rate. A second anisotropic etch process with a higher selectivity may be subsequently used. Protruding remaining portions of the gate dielectric layer are minimized to reduce leakage current between adjacent transistors.

Abstract: A gate-all-around field effect transistor may be provided by forming a sacrificial gate structure and a dielectric gate spacer around a middle portion of a semiconductor plate stack. A source region and a drain region may be formed on end portions of semiconductor plates within the semiconductor plate stack. The sacrificial gate structure and other sacrificial material portions may be replaced with a combination of a gate dielectric layer and a gate electrode. The gate dielectric layer and the gate electrode may be vertically recessed selective to the dielectric gate spacer. A first anisotropic etch process recesses the gate electrode and the gate dielectric layer at about the same etch rate. A second anisotropic etch process with a higher selectivity may be subsequently used. Protruding remaining portions of the gate dielectric layer are minimized to reduce leakage current between adjacent transistors.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a source/drain contact structure formed over a semiconductor substrate, and a first gate stack formed over the semiconductor substrate and adjacent to the source/drain contact structure. The semiconductor device structure also includes an insulating cap structure formed over and separated from an upper surface of the first gate stack. In addition, the semiconductor device structure includes first gate spacers formed over opposing sidewalls of the first gate stack to separate the first gate stack from the source/drain contact structure. The first gate spacers extend over opposing sidewalls of the insulating cap structure, so as to form an air gap surrounded by the first gate spacers, the first gate stack, and the insulating cap structure.