Abstract: An electronic device includes a monitor stand, a hinge mechanism, and an operation element. The hinge mechanism includes a back plate, a speed reduction assembly, and a friction assembly. The back plate is fixed to the monitor stand. The speed reduction assembly includes an input plate and a speed reduction member. The speed reduction member is arranged on the input plate. The friction assembly is arranged between the back plate and the input plate. The operation element is connected to the speed reduction member. A rotation center of the operation element coincides with an axis of the back plate and the speed reduction member are coaxially arranged.

Abstract: A traction battery pack venting system includes a plurality of battery arrays within a traction battery pack. The battery arrays each have a plurality of individual battery cells. The system further includes a divider system that provides a plurality of vented gas receiving compartments. Each of the vented gas receiving compartments are separate and distinct from the other vented gas receiving compartments within the plurality of vented gas receiving compartments. Each of the vented gas receiving compartments are associated with one of the battery arrays. Each of the vented gas receiving compartments can be associated with a manifold. The vent gas produced from thermal runaway can be discharged to the vented gas receiving compartments, directed to a manifold, and discharge to the external atmosphere.

Abstract: A wide band matching network for power amplifier impedance matching, the wide band matching network comprising: a power amplifier transistor connected to an output network; the output network including: a series capacitor; an on-chip transformer connected to the capacitor in series, wherein the transformer and the capacitor act as a second order filter; and a port connected to the capacitor and a receiver switch.

Abstract: A wide band matching network for power amplifier impedance matching, the wide band matching network comprising: a power amplifier transistor connected to an output network; the output network including: a series capacitor; an on-chip transformer connected to the capacitor in series, wherein the transformer and the capacitor act as a second order filter; and a port connected to the capacitor and a receiver switch.

Abstract: A wide band matching network for power amplifier impedance matching, the wide band matching network comprising: a power amplifier transistor connected to an output network; the output network including: a series capacitor; an on-chip transformer connected to the capacitor in series, wherein the transformer and the capacitor act as a second order filter; and a port connected to the capacitor and a receiver switch.

Abstract: An RF frontend IC device includes an RF transceiver to transmit and receive RF signals and a frequency synthesizer to perform frequency synthetization to operate within a predetermined frequency band. The frequency synthesizer generates an LO signal to the RF transceiver to enable the RF transceiver to transmit and receive RF signals within the predetermined frequency band. The frequency synthesizer includes a QPG circuit to generate signals shifted in phases based on the LO signal and a phase shifting circuit to generate quadrant signals based on the signals shifted in phases. Each of the quadrant signals corresponds to one of the four quadrants in phases in the respective quadrant spaces. The phase shifting circuit includes multiple phase switches operable in a collaboration manner to further shift in phase based on the signal shifted in phases to generate the quadrant signals in proper quadrant spaces.

Abstract: An RF antenna includes a first substrate having a first top surface and a first bottom surface and a second substrate having a second top surface and a second bottom surface, wherein the first substrate is disposed on top of the second substrate, the second bottom surface including a ground plane disposed thereon. The RF antenna further includes a low-band (LB) radiation element disposed on the first top surface of the first substrate. The LB radiation element is to resonate within a first frequency band to transmit and receive RF signals associated with the first frequency band. The RF antenna further includes multiple high-band (HB) radiation elements disposed between the first bottom surface of the first substrate and the second top surface of the second substrate. Each HB radiation element is to resonate within a second frequency band to transmit and receive RF signals associated with the second frequency band.

Abstract: A flip chip IC device utilized in RF transceivers includes a bare die having a number of metalized pads and each metalized pad has a solder ball deposited thereon. The flip chip IC device further includes a substrate having a number of connector pads corresponding to the metalized pads. The connector pads are connected to one or more electronic components disposed on the substrate via a number of connector strips. The bare die is flipped up-side-down such that the metalized solder pads are aligned and connected with the connector pads of the substrate via the solder balls. At least one of the connector strips includes a strip section having an uneven strip width configured to compensate an impedance of a transmission line formed based on a connection between a metalized pad of the bare die and a connector pad of the substrate to match predetermined impedance.

Abstract: An RF frontend IC device includes an RF transceiver to transmit and receive RF signals and a frequency synthesizer to perform frequency synthetization to operate within a predetermined frequency band. The frequency synthesizer generates an LO signal to the RF transceiver to enable the RF transceiver to transmit and receive RF signals within the predetermined frequency band. The frequency synthesizer includes a QPG circuit to generate signals shifted in phases based on the LO signal and a phase shifting circuit to generate quadrant signals based on the signals shifted in phases. Each of the quadrant signals corresponds to one of the four quadrants in phases in the respective quadrant spaces. The phase shifting circuit includes multiple phase switches operable in a collaboration manner to further shift in phase based on the signal shifted in phases to generate the quadrant signals in proper quadrant spaces.

Abstract: A flip chip IC device utilized in RF transceivers includes a bare die having a number of metalized pads and each metalized pad has a solder ball deposited thereon. The flip chip IC device further includes a substrate having a number of connector pads corresponding to the metalized pads. The connector pads are connected to one or more electronic components disposed on the substrate via a number of connector strips. The bare die is flipped up-side-down such that the metalized solder pads are aligned and connected with the connector pads of the substrate via the solder balls. At least one of the connector strips includes a strip section having an uneven strip width configured to compensate an impedance of a transmission line formed based on a connection between a metalized pad of the bare die and a connector pad of the substrate to match predetermined impedance.

Abstract: According to one embodiment, a differential power amplifier includes a pair of transistors, a transformer coupled to the drain terminals of the transistors, and an output transmission line. The differential power amplifier operates in a range of frequencies from a lower operating frequency to an upper operating frequency to provide a relatively linear gain between the lower operating frequency and the higher operating frequency. The drains of the transistors are coupled to the primary winding of the transformer. The output transmission line is coupled to the secondary winding of the transformer. The output transmission line further includes at least one inductor-capacitor (LC) circuit that is configured to match predetermined output impedance in view of the lower and upper operating frequencies of the differential power amplifier.

Abstract: An RF antenna includes a first substrate having a first top surface and a first bottom surface and a second substrate having a second top surface and a second bottom surface, wherein the first substrate is disposed on top of the second substrate, the second bottom surface including a ground plane disposed thereon. The RF antenna further includes a low-band (LB) radiation element disposed on the first top surface of the first substrate. The LB radiation element is to resonate within a first frequency band to transmit and receive RF signals associated with the first frequency band. The RF antenna further includes multiple high-band (HB) radiation elements disposed between the first bottom surface of the first substrate and the second top surface of the second substrate. Each HB radiation element is to resonate within a second frequency band to transmit and receive RF signals associated with the second frequency band.

Abstract: A power amplifier includes a transistor operating in a range of frequencies from a lower operating frequency to a higher operating frequency to provide a relatively linear gain between the lower operating frequency and the higher operating frequency, an input transmission line circuit coupled to a gate terminal of the transistor, and an output transmission line circuit coupled to a drain terminal of the transistor. The input transmission line includes an inductor-capacitor (LC) circuit that resonates at a first resonant frequency equaled to or higher than the higher operating frequency. The output transmission line includes an inductor-capacitor-inductor (LCL) circuit and a capacitor-inductor-capacitor (CLC) circuit. The LCL circuit resonates at a second resonant frequency equaled to or lower than the lower operating frequency. The CLC circuit resonates at a third resonant frequency equaled to or higher than the higher operating frequency.

Abstract: An RF frontend circuit includes an RF transceiver and a frequency synthesizer to perform frequency synthetization in a wide frequency spectrum. The frequency synthesizer generates an LO signal to the RF transceiver. The frequency synthesizer includes a quadrature signal generator to generate a quadrature LO signal based on the LO signal. The quadrature signal generator includes a first transformer. A first primary winding of the first transformer is disposed on a first substrate layer of the IC and a secondary winding of the first transformer is disposed on a second substrate layer of an IC. A second transformer is coupled to the first transformer in series. A second primary winding of the second transformer is disposed on the first substrate layer of the IC and a secondary winding of the second transformer is disposed on the second substrate layer of the IC.

Abstract: The present invention provides a substrate-embedded antenna and an antenna array constituted by said antennas. An antenna of the present invention comprises a plurality of substrates, a metal fill and a feed line. Each of the substrates has at least one through-hole. The metal fill is placed within each through-hole, and each metal fill placed therein connects one another to form a columnar metal conductor which acts as a radiating body of the antenna. The feed line is electrically coupled to the metal conductor to input and output electrical signals. A plurality of said antennas may constitute an antenna array.

Abstract: The present invention provides a substrate-embedded antenna and an antenna array constituted by said antennas. An antenna of the present invention comprises a plurality of substrates, a metal fill and a feed line. Each of the substrates has at least one through-hole. The metal fill is placed within each through-hole, and each metal fill placed therein connects one another to form a columnar metal conductor which acts as a radiating body of the antenna. The feed line is electrically coupled to the metal conductor to input and output electrical signals. A plurality of said antennas may constitute an antenna array.