Abstract: Provided are a memory device and a method of manufacturing the same. The memory device includes: a stack structure; a first source/drain region and a second source/drain region located in a substrate beside the stack structure; a first self-aligned contact connected to the first source/drain region; a second self-aligned contact connected to the second source/drain region; a first liner structure located between the first self-aligned contact and a first sidewall of the stack structure; and a second liner structure located between the second self-aligned contact and a second sidewall of the stack structure. The first liner structure and the second liner structure are not connected and do not cover the stack structure.

Abstract: A pixel structure of a thin film transistor liquid crystal display employs a design of three metal layers and includes an organic insulating layer between a data signal line and a common electrode for reducing a parasitic capacitance, while a passivation layer included between the common electrode and a pixel electrode acts as a storage capacitor required for the pixels, so as to achieve a high aperture ratio, and the common electrode can act as a shielding bar for enhancing the display contrast.

Abstract: A pixel structure of a thin film transistor liquid crystal display employs a design of three metal layers and includes an organic insulating layer between a data signal line and a common electrode for reducing a parasitic capacitance, while a passivation layer included between the common electrode and a pixel electrode acts as a storage capacitor required for the pixels, so as to achieve a high aperture ratio, and the common electrode can act as a shielding bar for enhancing the display contrast.

Abstract: A pixel structure of a thin film transistor liquid crystal display employs a design of three metal layers and includes an organic insulating layer between a data signal line and a common electrode for reducing a parasitic capacitance, while a passivation layer included between the common electrode and a pixel electrode acts as a storage capacitor required for the pixels, so as to achieve a high aperture ratio, and the common electrode can act as a shielding bar for enhancing the display contrast.

Abstract: A shift register circuit with high stability includes a plurality of stages, each including a supplementary unit for supplementing an output node with low voltage level. The present invention utilizes an output signal of the output node to feed back to a shift register circuit unit and act as a control signal. The control signal controls the shift register circuit unit, and further the output node of the shift register circuit unit is continuously supplemented with low voltage level. Thus, the shift register circuit of the present invention has the function of driving signal shift according to the necessity of active matrix liquid crystal panel. Furthermore, when an amorphous silicon thin film transistor is embodied in the shift register circuit, the present invention restrains the shift phenomena of the threshold voltage of the amorphous silicon thin film transistors and thereby increases the lifetime and stability of the shift register circuit.

Abstract: A pixel structure of a thin film transistor liquid crystal display employs a design of three metal layers and includes an organic insulating layer between a data signal line and a common electrode for reducing a parasitic capacitance, while a passivation layer included between the common electrode and a pixel electrode acts as a storage capacitor required for the pixels, so as to achieve a high aperture ratio, and the common electrode can act as a shielding bar for enhancing the display contrast.

Abstract: The present invention is a storage capacitor structure for liquid crystal display panels, by using a portion of the pixel electrode formed by the transparent metal layer that is overlapped and corresponding to the common electrode of the second metal layer, which is used as the storage capacitor for the pixel. The common electrode is also used as the second metal layer of the pixel, which shields unnecessary light of the backlight module to raise the contrast ratio of the whole display panel.

Abstract: A shift register circuit with high stability includes a plurality of stages, each including a supplementary unit for supplementing an output node with low voltage level. The present invention utilizes an output signal of the output node to feed back to a shift register circuit unit and act as a control signal. The control signal controls the shift register circuit unit, and further the output node of the shift register circuit unit is continuously supplemented with low voltage level. Thus, the shift register circuit of the present invention has the function of driving signal shift according to the necessity of active matrix liquid crystal panel. Furthermore, when an amorphous silicon thin film transistor is embodied in the shift register circuit, the present invention restrains the shift phenomena of the threshold voltage of the amorphous silicon thin film transistors and thereby increases the lifetime and stability of the shift register circuit.